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High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric
摘要： In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.
关键词： metal-oxide semiconductors,thin-film transistors,high-k dielectric,high mobility,inkjet printing
更新于2025-11-14 15:19:41
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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO <sub/>2</sub> -Based Thin-Film Transistor Devices
摘要： A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 °C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)4] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)4] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 ? cycle?1 at 150 and 60 °C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 °C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on/off ratio of 107 and field-effect mobility of ≈ 12 cm2 V?1 s?1 for the as-deposited thin films deposited at such low temperatures.
关键词： thin-film transistors,tin(IV) oxide,thin films,precursors,atomic layer deposition
更新于2025-09-23 15:23:52
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Diketopyrrolopyrrole based small molecular semiconductors containing thiazole units for solution-processed n-channel thin-film transistors
摘要： In this work, three diketopyrrolopyrrole-based conjugated small molecular semiconductors characterized by the combination of a diketopyrrolopyrrole (DPP) central core, thiazole π-conjugated moiety, and dicyanovinyl end group with different alkyl side chain substituents, 2TzDPPA1-2DCV, 2TzDPPA2-2DCV, and 2TzDPPA3-2DCV were synthesized. These small molecules have a similar narrow band gap of about 1.50 eV and deep LUMO energy level at -4.30 eV. Under ambient conditions, electron mobilities of 0.28 cm2 V-1 s-1, 0.13 cm2 V-1 s-1, 0.25 cm2 V-1 s-1 for solution processed thin films of 2TzDPPA1-2DCV, 2TzDPPA2-2DCV, and 2TzDPPA3-2DCV were obtained, due to high crystallinity and well-organized molecular stacking. Compared with the other two materials, thin films of 2TzDPPA1-2DCV enable the best OFET performance with desirable Ion / Ioff rates exceeding of 107, attribute to the coefficient of smoother film morphology and stronger crystallinity. These results reveal that introducing the thiazole unit into the DPP-based conjugated skeleton is conducive to enhance the crystallinity and tailor LUMO energy levels which ensure good performance and excellent stability of these molecules as active materials for n-channel electronic devices.
关键词： small molecules,solution-processed n-channel thin-film transistors,thiazole unit,diketopyrrolopyrrole,air stability
更新于2025-09-23 15:23:52
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24.5: Back-Channel-Etched a-IGZO TFTs with TiO <sub/>2</sub> :Nb Protective Layer
摘要： A back-channel-etched (BCE) process for the fabrication of a-IGZO TFTs is demonstrated, in which conductive TiO2:Nb (TNO) thin film is used to serve as protective layer for the a-IGZO active layer. TNO film could excellently protect a-IGZO due to its ultra-small surface roughness. With treatment by N2O plasma + 200°C annealing, the conductive TNO can be converted into an insulator to serve as an in situ passivation layer. Besides, the TNO in the source–drain (S-D) region remain conductive due to the protection of S-D electrodes, which could be proved by the XPS results. Compare with the conventional device without TNO protective layer, the S-D parasitic resistance (RSD) of devices with 1 nm and 5 nm TNO is significantly reduced. The positive bias stress stability is improved as well for the devices with TNO in situ passivation layer.
关键词： amorphous indium gallium zinc oxide (a-IGZO),Nb doped TiO2 (TNO),thin film transistors (TFTs),back-channel-etched (BCE) process
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Elimination of the Hump Current of P-Channel Polycrystalline Silicon Thin-Film Transistor After Positive Bias Stress
摘要： The stability of p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under positive bias stress (PBS) is investigated in this paper. Interestingly, it is observed that the transfer curves show different degradation phenomena from the previous reports, i.e., the threshold voltage (Vth) shifts to the negative gate bias direction, and the hump current in the subthreshold region clearly shrinks with the increase of the stress time, and finally disappears under the PBS, which is explained by the creation and accumulation of positive charges in the gate oxide. It is also observed that the hump current in p-channel TFTs is eliminated at a higher temperature and one possible mechanism for the appearance of hump current is proposed.
关键词： thin-film transistors,positive bias stress (PBS),hump current,p-channel
更新于2025-09-23 15:23:52
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The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics
摘要： In this paper, several fundamental pseudo-CMOS digital circuits with n-type indium tin oxide-stabilized ZnO thin-film transistors (TFTs) were implemented and investigated. The optical transmittance of circuits varied from 77% to 92% throughout the visible wavelength band. Electrically, the operation frequency of inverters, nor gates, nand gates, D latches, and D flip flops were all found to exceed 10 kHz with a supply voltage of 10 V. Besides, 13-stage ring oscillators could be operated at 42 kHz with a propagation delay time of 0.92 μs when the supply voltage was set as 20 V. Among the state-of-the-art transparent designs, these proposed circuits based on the ITO-stabilized ZnO TFTs exhibited high-speed performance, which were promising as building blocks for transparent electronics with moderate frequency requirements.
关键词： transparent electronics,Digital circuits,indium tin oxide-stabilized ZnO,thin-film transistors (TFTs),ring oscillator (RO)
更新于2025-09-23 15:22:29
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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44.2: <i>Invited Paper:</i> Printed Polymer TFTs Towards Low-Cost Backplane Production
摘要： We present Merck’s new formulation and material developments enabling high-volume and high-throughput printing techniques to be used for cost-effective electronic circuitry and backplane production. Performance at TFT array level in excess of 2 cm2/Vs, comparable to spin coating is demonstrated at Gen1 scale and 50 ppi resolution, using a hybrid combination of conventional lithographic steps and direct gravure printing.
关键词： active-matrix backplane,Organic semiconductors,gravure,printed thin-film transistors
更新于2025-09-23 15:22:29
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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
摘要： In this paper, we have investigated the effects of yttrium (Y) doping on the electrical performance and stability of ZnO thin film transistors (TFTs). Here, Y-doped ZnO TFTs were fabricated by using radio frequency magnetron sputtering at 150 °C. As a result, the 1% Y-doped ZnO TFT exhibits a small threshold voltage shifts of 2.5 V under positive bias stress and ?2.8 V under negative bias stress as well as desirable device performance with field effect mobility of 9.8 cm2/V s, a subthreshold swing of 320 mV/decade and on/off current ratio of 107, respectively. Based on the XPS analysis and electrical characterizations, the improvement in stability and electrical properties of ZnO TFTs were attributed to the appropriate Y doping concentration, which not only could control the carrier concentration and broaden the band gap of ZnO film, but also suppress the oxygen vacancy defects and passivate the trap density at the SiO2/ZnO interfaces. Consequently, the high stability and excellent electrical performances of Y-doped ZnO TFTs show great potential for use in flat panel displays.
关键词： Doping,Zinc oxide (ZnO),Thin film transistors (TFTs),Bias stress stability
更新于2025-09-23 15:22:29
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On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO
摘要： A set of bottom-gate Zinc Oxide (ZnO) thin film transistors (TFTs) with active layers containing 1, 4 and 8 layers of spin-coated ZnO were fabricated and their electrical characteristics such as transistor transfer and capacitance-voltage characteristics were analyzed. The transconductance of the single-layered ZnO transistor shows a single peak. On the other hand, multiple peaks and humps were observed in the transconductance and capacitance-voltage characteristics of multi-layered ZnO transistors. The multi-layers were grown by reiteration of the spin-coating process, producing ZnO-ZnO interlayer-interfaces. The surface of the ZnO layer in contact with the ambient contains active sites, resulting in chemisorption of ambient gases such as oxygen prior to the deposition of subsequent layers. The chemisorbed species become negatively-charged and form charge sheets, depleting the surface/interface region. It was proposed that the formation of depletion layers at ZnO-ZnO interlayer-interfaces is the main cause for the observed anomaly.
关键词： Sol-gel,Zinc oxide,Spin-coating,Thin-film transistors,Electrical Properties,Interface Defects
更新于2025-09-23 15:22:29