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Formation of Micro- and Nano-Trenches on Epitaxial Graphene
摘要： Catalytic cutting by metal particles under an atmosphere environment is a promising method for patterning graphene. Here, long straight micro-trenches are produced by the sliding of metal particles (Ag and In) on epitaxial graphene (EG) substrate under the ultra-high vacuum (UHV) annealing. The morphology and orientation relationship of the micro-trenches are observed by scanning electron microscopy (SEM), and the damage effect is con?rmed by Raman scattering. Atomic force microscopy (AFM) and scanning tunneling microscopy (STM) are further adopted to atomically characterize the sliding behavior of metal particles, which resembles a similar etching method and can be used to make graphene nano-trenches. The study provides us with more understanding about the mutual effects between metals on EG, which hopes to pave the way for the applications of graphene-based devices.
关键词： epitaxial grapheme (EG),sliding,metal particles,trench
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Impact of SiC MOSFET on PV Inverter
摘要： This paper investigates the possibility of improving power density of three-phase grid inverter by adopting SiC MOSFET. Static and dynamic characteristics of trench gate SiC MOSFET, planar gate SiC MOSFET and Si IGBT are compared. The efficiency performance of planar gate SiC MOSFET inverter, trench gate SiC MOSFET inverter and Si IGBT inverter are estimated and compared with increased switching frequency. Finally, these results are verified with 10 kW inverter prototypes.
关键词： trench gate SiC MOSFET,efficiency,planar gate SiC MOSFET,power density,three-phase grid inverter
更新于2025-09-04 15:30:14
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy
摘要： Topography simulation of chemical-vapor-deposition (CVD) trench filling has been advanced as a tool for designing fabrication processes of high-voltage 4H-SiC superjunction devices. In the longitudinal section of filled stripe trenches, an experimentally observed dip, which had not been well reproduced with a previous technique using a fixed surface free energy (γ), came to be qualitatively reproduced by including an orientation dependence of γ.
关键词： orientation,SiC,surface free energy,CVD,trench
更新于2025-09-04 15:30:14