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oe1(光电查) - 科学论文

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出版时间
  • 2019
研究主题
  • composite electrode
  • silver nanowire
  • reduced graphene oxide
  • zinc oxide
应用领域
  • Optoelectronic Information Materials and Devices
机构单位
  • China Jiliang University
  • Guangdong Poly-Optoelectronics Co.
351 条数据
?? 中文（中国） ▾

  • 1,8-Naphthalimide-based fluorescent sensor with high selectivity and sensitivity for zn2+ and its imaging in living cells

    摘要： A novel 4-amino-1, 8-naphthalimide-based fluorescent sensor with iminodiacetic acid as receptor, was developed and applied successfully to image Zn2+ in living cells. Under physiological pH conditions, it demonstrates high selectivity and sensitivity for sensing Zn2+ with about 34-fold enhancement in aqueous solution, with a characteristic emission band of 4-amino-1,8-naphthalimide with a green color centered at 550 nm.

    关键词： Naphthalimide,Iminodiacetic Acid,Zinc,Fluorescent Sensor

    更新于2025-09-23 15:22:29

  • Multi- and single-step in-situ microwave annealing as low-thermal-budget techniques for solution-processed indium–gallium–zinc oxide thin films

    摘要： In this study, low-thermal-budget in-situ microwave annealing of solution-processed indium–gallium–zinc oxide (IGZO) thin films was investigated as a potential alternative to the conventional high-thermal-budget annealing process. The low-temperature baking and high-temperature post-deposition annealing of the solution-processed IGZO film were continuously performed using the same microwave equipment, leading to a reduced heat treatment processing time and temperature. We compared the electrical characteristics of IGZO thin film transistors (TFTs) produced using single- and multi-step in-situ microwave annealing methods with those of TFTs manufactured via the conventional annealing method and found that the proposed single-step microwave annealing method yielded TFTs with electrical characteristics better than those of the TFTs fabricated using the multi-step and conventional annealing methods. In addition, the reliability was evaluated by conducting positive and negative gate bias stress tests, in which the IGZO TFTs manufactured using the proposed heat treatment method proved superior to those fabricated via the conventional heat treatment method. We investigated the effects of heat treatment on the composition and energy band structures of the IGZO films by performing X-ray photoelectron spectroscopy analysis and found that the proposed in-situ microwave annealing method is more effective than the conventional method in solution processing.

    关键词： low thermal budget,indium-gallium-zinc oxide,Microwave,solution process

    更新于2025-09-23 15:21:21

  • Influence of Electrochemical Deposition Parameters on Morphological Properties of ZnO on Si (100)

    摘要： In this study, ZnO layer was deposited on Si (100) by electrochemical deposition (ECD) technique. Mixture of zinc chloride (ZnCl2) and potassium chloride (KCl) at different volume ratio was used as the electrolyte. The current density was fixed at 10 mA/cm2 with deposition time of 50 and 30 minutes. The effect of substrate treatment has also been observed to improve the adhesion of the deposited layer. The morphology of the ZnO layer was analyzed using field emission scanning electron microscopy (FESEM), and variable pressure scanning electron microscopy (VPSEM) equipped with energy dispersive X-ray (EDX) module. Four types of ZnO structure had been obtained; needle, flake, coral and pillar-like structures at different deposition conditions. These structures were obtained by changing several parameters such as substrate doping and chloride medium of electrolyte. It was found that the flake-size become smaller as the amount of Chloride ion (Cl-) in electrolyte increased. In addition, substrate type also found to affect the deposition process. As indicated by the EDX spectra, the ZnO is managed to fully cover the target area of deposition for the n-type Si substrate but a bit poor on p-type Si substrate. The targeted EDX ratio of Zn:O is 1:1, which indicates balance stoichiometry of ZnO. However, the best EDX ratio of Zn:O found in this study was only 1.4:1 which was achieved from deposition on p-type Si substrate with no post-annealing applied. The thickness of deposited ZnO was found to decrease with decreasing deposition time. The average thickness was more than 150 μm for 50 minute deposition while 30 minutes deposition yielded thickness less than 100 μm. It is clearly shown that parameters such as time, electrolyte volume ratio and substrate doping have influence on the morphology and thickness of the deposited ZnO on Si (100) by ECD process.

    关键词： morphology,electrochemical deposition,zinc oxide

    更新于2025-09-23 15:21:21

  • Design guidelines for high sensitivity ZnO nanowire gas sensors with Schottky contact

    摘要： Zinc oxide nanowire (ZnO NW) gas sensor with single Schottky contact is capable of sensitive detection of gas molecules. In this study, we investigate the effect of design factors such as nanowire defect density, diameter, and length on the gas sensitivity using 3-D numerical simulation. The sensor with lower defect density or smaller NW diameter exhibits improved gas sensitivity, while length does not have an impact when not considering the external environment such as background gases and binding probability. Lower defect density causes low electron density within the NW in air environment, and the change in electron density due to gas adsorption is intensified, thus improving gas sensitivity. As the NW diameter decreases, the change in the electrical conductivity due to gas molecules is greatly increased due to an increase in the ratio of the depletion area to the entire NW area. In contrast, the nanowire length does not impact the gas sensitivity because the change in the electron density is independent of the length. These results are helpful to understand the sensing mechanism and provide design guidelines to maximize the sensitivity.

    关键词： Zinc oxide,Gas sensitivity,Nanowire,Numerical simulation,Gas sensor

    更新于2025-09-23 15:21:21

  • Influence of silicon dioxide medium on the structural and electrical properties of nickel zinc ferrite

    摘要： Nickel zinc ferrite [(Ni 0:65 Zn 0:35 Fe 2 O 4)x / (SiO 2)1(cid:0)x where, x = 1.0, 0.85, 0.65, 0.50, 0.35, and 0.15] is synthesized using the glyoxylate precursor method. The synthesis, characterization, and electrical study of nickel zinc ferrites/SiO 2 powder with low dielectric constant, very low conductivity, and loss tangent with low frequency dispersion, suitable for good insulators, is reported here. X-ray diffraction, TGA, and FT-IR studies are employed for identifying crystalline phases and structure. Crystallite size is calculated by the Scherrer formula and Williamson–Hall equation and found to fall in the range of 4.9–25 nm. TEM of the samples shows spherical particles of uniform size distribution and the spotty rings of SAED patterns are analyzed for identifying the crystal planes. The study confirms a simple and efficient way to synthesize single-phase nickel zinc ferrite (NZFO) spherical particles of nano size ( (cid:25) 15 nm at 1000 ? C) with lower particle agglomeration in comparison to any other methods. Electrical studies are carried out using an LCR meter. The observed value of dielectric constant falls in the range of 10–80, loss tangent in the range of 0.05–0.4, and electrical conductivity in the range of 10 (cid:0)4 to 10 (cid:0)7 mho m (cid:0)1 . These values are respectively functions of temperature, frequency, and the ferrite content in ferrite/SiO 2 samples. A proper selection of ferrite concentration in the silica medium enables one to prepare NZFO/SiO 2 material of very low loss tangent with dielectric constant in the range of 10–80.

    关键词： tetraethyl orthosilicate,dielectric constant,Nickel zinc ferrite,dielectric conductivity,loss tangent,ethylene glycol

    更新于2025-09-23 15:21:21

  • Optical and Structure Analysis of ZnO:Al Film

    摘要： ZnO and ZnO:Al are wide-bandgap semiconductors which have many applications, mainly as transparent conducting films. Thin films of these compounds were deposited onto glass and silicon substrates by RF magnetron sputtering for the investigation of structural and optical characteristics. The XRD results show that the films present wurtzite structure. The formation of a polycrystalline film having a preferential crystallographic orientation in the plane (002) is observed in the doped samples. The Al incorporated films exhibited optical transmittance above 80% in the visible spectrum and a clear absorption band in the infrared due to free carriers. Additionally, the optical band gap around 3.48 eV is significantly above intrinsic ZnO (3.25 eV). Photoluminescence (PL) measurements showed a broad emission band in the visible region. In addition, PL emission lines at 3.32 and 3.37 eV showed up in Al incorporated films, and were related to excitonic emissions. The results show that the Burstein-Moss effect plays a central role in determining the optical characteristics of the doped material.

    关键词： AZO,Zinc Oxide,Burstein-Moss

    更新于2025-09-23 15:21:21

  • Phase transformation and photoluminescence of undoped and Eu3+-doped zinc stannate (Zn2SnO4) nanocrystals synthesized by hydrothermal method

    摘要： In this work we report a hydrothermal approach for synthesis of zinc stannate (Zn2SnO4–ZTO) nanocrystals. Structural properties and morphology of the samples were investigated in detail. In particular, our research focused on the effect of hydrothermal duration on the phase composition of ZTO nanocrystals. By combining X-ray diffraction analysis, scanning electron microscopy and selected area energy-dispersive X-ray spectroscopy, a crystalline phase transformation during the hydrothermal process was enlightened. The ZTO nanocrystals were doped with europium ions. The room-temperature emission spectra of the undoped ZTO and Eu3+-doped ZTO nanocrystals were recorded. The emission spectra of the undoped ZTO nanocrystals showed two broad bands related to the lattice defects, while the spectra of Eu3+-doped ZTO nanocrystals exhibited the narrow emission peaks, which were assigned to the radiative intra-configurational f–f transitions of Eu3+ ions.

    关键词： nanocrystals,europium doping,hydrothermal method,photoluminescence,zinc stannate

    更新于2025-09-23 15:21:21

  • Structural, optical and photocatlytic properties of zinc oxide nanoparticles obtained by simple plant extract mediated synthesis

    摘要： We report a facile and inexpensive method to prepare zinc oxide nanoparticles with different particle size and shape using Achyranthes aspera and Couroupita guianensis leaf extracts as the reducing agent and zinc nitrate as a precursor. The prepared zinc oxide nanoparticles were analyzed by various characterization methods and obtained results evidently revealed that crystalline parameter, purity, optical absorption, band gap, particle size and shape of the ZnO nanoparticles significantly influenced by the type of leaf extract used as reducing agent. Further, photocatlytic activity study obviously demonstrates that prepared samples exhibits superior photocatlytic activity for the degradation of methylene blue dye by creating superoxide anion radicals and OH radicals under photonic irradiation. Hence, prepared zinc oxide nanoparticles by plant extract mediated synthesis can be applied as a photocatlyst for the possible waste water treatment in textile industry.

    关键词： Waste water treatment,Photocatalytic activity,Plant extract mediated synthesis,Methylene blue dye,Zinc oxide nanoparticles

    更新于2025-09-23 15:21:21

  • Cathodoluminescence and thermoluminescence of ZnB2O4:Eu3+ phosphors prepared via wet-chemical synthesis

    摘要： In present work, a series of Eu doped zinc borate, ZnB2O4, phosphors prepared via wet chemical synthesis and their structural, surface morphology, cathodoluminescence (CL) and thermoluminescence (TL) properties have been studied. Phase purity and crystal structure of as-prepared samples are con?rmed by X-ray di?raction measurements (XRD) and they were well consistent with PDF card No. 39-1126, indicating the formation of pure phase. The thermoluminescence (TL) behaviors of Eu activated ZnB2O4 host lattice are studied for various beta doses ranging from 0.1 to 10 Gy. The high-temperature peak of Eu activated sample located at 192 °C exhibited a linear dose response in the range of 0.1–10 Gy. Initial rise (IR) and peak shape (PS) methods were used to determine the activation energies of the trapping centres. The e?ects of the variable heating rate on TL behaviour of Eu activated ZnB2O4 were also studied. When excited using an electron beam induced light emission (i.e cathodoluminescence, CL) at room temperature (RT), the as-prepared phosphors generate reddish-orange color due to predominant emission peaks of Eu3+ ions located at 576–710 nm assigned to the 5D0→7FJ (J=1,2,3, and 4) transitions. The maximum CL intensity for Eu3+ ions at 614 nm with transition 5D0→7F2 was reached Eu3+ concentration of 5 mol%; quenching occurred at higher concentrations. Strong emission peak for Eu3+ ions at 614 nm with transition 5D0→7F2 is observed. The CL experimental data indicate that ZnB2O4:Eu3+ phosphor as an orange-red emitting phosphor may be promising luminescence materials for the optoelectronic applications.

    关键词： Thermoluminescence,Zinc borates,XRD,Cathodoluminescence,Rare earth

    更新于2025-09-23 15:21:21

  • Highly transparent zinc nitride thin films by RF magnetron sputtering with enhanced optoelectronic behavior

    摘要： Transparent semiconducting nitrides are important materials for many modern technologies. Here, optical transparent semiconducting zinc nitride (Zn3N2) thin films have been developed by reactive RF magnetron sputtering at different nitrogen (N2) contents. The deposited films are found to be cubic with preferred orientation of (3 2 1) plane. High optical transmittance (～96%) and refractive index (1.32) at the wavelength of 500 nm and optical band gap of 3.1 eV have been observed for the films deposited at 45% nitrogen content. The investigation on other optical constants such as extinction coefficient and dielectric constant as a function of wavelength shows enhanced optical behavior. The Zn3N2 thin films show n-type conductivity with carrier concentration of ～1020–1021 cm?3, mobility in the range of 4 to 56 cm2/Vs (which is 1–2 times higher than the values of TCOs) and resistivity around 10?4 Ωcm as a function of nitrogen content. These results suggested that Zn3N2 thin films could perform as potential transparent semiconductors for thin film solar cells.

    关键词： Electron mobility,Zinc nitride,Optical constants,Transparent semiconductor,Reactive RF sputtering

    更新于2025-09-23 15:21:21