摘要： In this study, low-thermal-budget in-situ microwave annealing of solution-processed indium–gallium–zinc oxide (IGZO) thin films was investigated as a potential alternative to the conventional high-thermal-budget annealing process. The low-temperature baking and high-temperature post-deposition annealing of the solution-processed IGZO film were continuously performed using the same microwave equipment, leading to a reduced heat treatment processing time and temperature. We compared the electrical characteristics of IGZO thin film transistors (TFTs) produced using single- and multi-step in-situ microwave annealing methods with those of TFTs manufactured via the conventional annealing method and found that the proposed single-step microwave annealing method yielded TFTs with electrical characteristics better than those of the TFTs fabricated using the multi-step and conventional annealing methods. In addition, the reliability was evaluated by conducting positive and negative gate bias stress tests, in which the IGZO TFTs manufactured using the proposed heat treatment method proved superior to those fabricated via the conventional heat treatment method. We investigated the effects of heat treatment on the composition and energy band structures of the IGZO films by performing X-ray photoelectron spectroscopy analysis and found that the proposed in-situ microwave annealing method is more effective than the conventional method in solution processing.