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Role of interface potential barrier, Auger recombination and temporal coherence in In <sub/>0.5</sub> Ga <sub/>0.5</sub> As/GaAs quantum dot-based p-i-n light emitting diodes
摘要： In this work, we investigate the mechanisms that control the electroluminescence from p-i-n heterostructures containing self-assembled In0.5Ga0.5As quantum dots embedded inside a GaAs/Al0.3Ga0.7As quantum well as a function of temperature and applied bias. Our results reveal that the carrier dynamics at the interface between the quantum dot and the quantum well play a crucial role in the electroluminescence emission. At low temperatures, two distinct emission bands are observed. Initially at low bias current, we observe broad emissions from the quantum wells and wetting layers. Another dominant and sharp emission at lower energy arises from the quantum dots, but only at higher bias currents. We discuss how a potential barrier between the quantum dots and quantum well can control the density of injected carriers undergoing optical recombination. We have also investigated the role of carrier capture and escape, quantum-confined stark effect and band-filling effects in the electroluminescence emission. In addition, we demonstrate how measurements of temporal coherence of individual spectral peaks, can detect the presence of Auger recombination in quantum dots under high injection currents. Interestingly, a significant increase in the temporal coherence of quantum dot emissions is observed, which could be due to a decrease in Auger recombination with increasing temperature.
关键词： quantum dots,Auger recombination,electroluminescence,coherence
更新于2025-11-14 17:28:48
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Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core-Shell Nanowires on Silicon
摘要： Contactless time-resolved pump-probe and external quantum efficiency measurements were performed on epitaxially grown free-standing wurtzite indium arsenide/indium aluminum arsenide (InAs-InAlAs) core-shell nanowires on Si (111) substrate from 77K to 293K. The first independent investigation of Shockley-Read-Hall, radiative and Auger recombination in InAs-based NWs is presented. Although the Shockley-Read Hall recombination coefficient was found to be at least two orders of magnitude larger than the average experimental values of other reported InAs materials, the Auger recombination coefficient was reported to be ten-fold smaller. The very low Auger and high radiative rates result in an estimated peak internal quantum efficiency of the core-shell nanowires as high as 22% at 77K, making these nanowires of potential interest for high efficiency mid-infrared emitters. A greater than two-fold enhancement in minority carrier lifetime was observed from capping nanowires with a thin InAlAs shell due to passivation of surface defects.
关键词： Auger recombination rate,radiative,Shockley-Read-Hall,Pump-probe spectroscopy,core-shell nanowires,surface/interface recombination velocity,minority carrier lifetime
更新于2025-09-23 15:23:52
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Radiative and non radiative recombinations study in the novel nanocomposites BiVO4/3DOM-TiO2, ZnO/3DOM-TiO2 and BiVO4/3DOM-ZnO: Application to the photocatalysis
摘要： A theoretical investigation of optical proprieties of three nanostructures such as BiOV4/3DOM TiO2, ZnO/3DOM TiO2 and BiOV4/3DOM ZnO has been presented and discussed. The study based on a one band effective mass approximation model was developed to calculate the charge carrier energies on various parameters of nanostructures including their size. We computed the optical properties for both spherical BiVO4 and ZnO nanoparticles incorporated in the three dimensionally ordered macroporous inverse opal TiO2 nanocomposites (3DOM-TiO2 ). At first and by solving a three dimension Schr?dinger equation we calculated the dependence of charge carriers energies on the size of nanoparticles. Then we investigated the variation of the excitonic energy of BiOV4/3DOM-TiO2, ZnO/3DOM-TiO2 and BiOV4/3DOM-ZnO as function of the radius of these nanostructures into taken account the effects of dielectric and coulomb interaction between charge carriers. We showed that the radiative recombination lifetime is enhanced with decreasing BiVO4 and ZnO quantum dots (QDs) size. It was found that as the size of the dot is reduced the confinement of charge carriers and the optical gap are increased. The optical gap of the ZnO/3DOM-TiO2 is larger than both BiOV4/3DOM-TiO2 and BiOV4/3DOM-ZnO especially for small radius. It was also found that radiative life time in the BiOV4/3DOM-TiO2, ZnO/3DOM-TiO2 and BiOV4/3DOM-ZnO increased by increasing the radius of these nanostructures. In addition, we have also showed that, the radiative lifetime in the ZnO/3DOM-TiO2 nanostructure is less than both BiOV4/3DOM-TiO2 and BiOV4/3DOM-ZnO nanostructures. Finally, we have studied and discussed the Auger process in BiOV4/3DOM-TiO2, ZnO/3DOM-TiO2 and BiOV4/3DOM-ZnO nanostructures. At first, we have showed that the auger process is important when the radiuses of nanostructures are less than 2nm. Then we have also showed that this process is more important for ZnO/3DOM-TiO2 compared to the other nanostructures.
关键词： Photocatalysts,radiative lifetime,Auger recombination lifetime,nanocomposites
更新于2025-09-23 15:23:52
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Electron–hole correlations govern Auger recombination in nanostructures
摘要： The fast nonradiative decay of multiexcitonic states via Auger recombination is a fundamental process affecting a variety of applications based on semiconductor nanostructures. From a theoretical perspective, the description of Auger recombination in confined semiconductor nanostructures is a challenging task due to the large number of valance electrons and exponentially growing number of excited excitonic and biexcitonic states that are coupled by the Coulomb interaction. These challenges have restricted the treatment of Auger recombination to simple, noninteracting electron–hole models. Herein we present a novel approach for calculating Auger recombination lifetimes in confined nanostructures having thousands to tens of thousands of electrons, explicitly including electron–hole interactions. We demonstrate that the inclusion of electron–hole correlations are imperative to capture the correct scaling of the Auger recombination lifetime with the size and shape of the nanostructure. In addition, correlation effects are required to obtain quantitatively accurate lifetimes even for systems smaller than the exciton Bohr radius. Neglecting such correlations can result in lifetimes that are 2 orders of magnitude too long. We establish the utility of the new approach for CdSe quantum dots of varying sizes and for CdSe nanorods of varying diameters and lengths. Our new approach is the first theoretical method to postdict the experimentally known “universal volume scaling law” for quantum dots and makes novel predictions for the scaling of the Auger recombination lifetimes in nanorods.
关键词： semiconductor nanocrystals,quantum dots,excitons,auger recombination,biexcitons,nanorods
更新于2025-09-23 15:21:21
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Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
摘要： This paper provides insights into the degradation of InGaN-based LEDs by presenting a comprehensive analysis carried out on devices having two quantum wells (QWs) with different emission wavelengths (495 nm and 405 nm). Two different configurations are considered: one with the 495 nm QW closer to the p-side and one with the 495 nm QW closer to the n-side. The original results collected within this work indicate that (i) during stress, the devices show an increase in defect-related leakage both in reverse and low-forward voltage ranges: current increases with the square-root of stress time, indicating the presence of a diffusion process; (ii) stress induces a decrease in the luminescence signal emitted by both quantum wells: the drop in luminescence is stronger when measurements are carried out at low current levels, indicating that degradation is due to the generation of Shockley–Read–Hall recombination centers; (iii) remarkably, the degradation rate is linearly dependent on the luminescence signal emitted before stress by the well, indicating that carrier density impacts on degradation; and (iv) the optical degradation rate has a linear dependence on the stress current density. The results strongly suggest the existence of a recombination-driven degradation process: the possible role of Shockley–Read–Hall and Auger recombination is discussed. The properties of the defects involved in the degradation process are described through steady-state photocapacitance measurements.
关键词： quantum wells,Shockley–Read–Hall recombination,Auger recombination,degradation,steady-state photocapacitance,InGaN-based LEDs
更新于2025-09-23 15:21:01
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Suggestions on Efficiency Droop of GaN-based LEDs
摘要： InGaN/GaN-based light-emitting diodes (LEDs) are widely used in modern society and industry among different areas. However, InGaN/GaN LEDs suffer from an efficiency droop issue: The internal efficiency decreases during high current injection. The efficiency droop significantly affects the development of GaN-based LEDs devices in efficiency and light-output areas. Therefore, the improvement of the droop phenomenon has become a significant topic. This paper introduces several possible mechanisms of droop phenomenon based on different hypotheses including Auger Recombination, Carrier Delocalization and Electron Leakage. Furthermore, some proposals to mitigate efficiency droop, including semipolar LEDs, electron blocking layer(EBL), quaternary alloy and chip design will be discussed and analyzed. Also, it will provide some suggestions for the further optimization of droop phenomenon in each proposal.
关键词： electron blocking layer,semipolar LEDs,GaN-based LEDs,Auger Recombination,chip design,quaternary alloy,Carrier Delocalization,Electron Leakage,efficiency droop
更新于2025-09-23 15:21:01
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AIP Conference Proceedings [AIP Publishing 3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2019) - Bikaner, India (14a??15 October 2019)] 3RD INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2019) - Effect of polarization field and Auger recombination on internal quantum efficiency of InGaN/GaN blue LED
摘要： InxGa1-x N/GaN blue LEDs faces significant efficiency droop issue. The causes of efficiency droop are Shockley Read Hall recombination (SRH), Auger recombination (AR), carrier delocalization and electron leakage. The SRH, Auger and electron leakage are functions of carrier concentration and temperature. InGaN/GaN superlattice has polarization electric field at interface. In this work we explore effect of polarization electric field on efficiency droop. It is shown that polarization field enhances Auger coefficient resulting in more droop in internal quantum efficiency of blue LED. Thus, for improvement in efficiency, polarization field required to be minimized which requires growth of the material in m- plane instead of c-plane.
关键词： efficiency droop,polarization electric field,Auger recombination,blue LED,InGaN/GaN
更新于2025-09-23 15:21:01
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Suppressing Efficiency Roll-Off at High Current Densities for Ultra-Bright Green Perovskite Light-Emitting Diodes
摘要： Perovskite light-emitting diodes (PeLEDs) have undergone rapid development in the last several years with external quantum efficiencies (EQE) reaching over 21%. However, most PeLEDs still suffer from severe efficiency roll-off (droop) at high injection current densities, thus limiting their achievable brightness and presenting a challenge to their use in laser diode applications. In this work, we show that the roll-off characteristics of PeLEDs are affected by a combination of charge injection imbalance, nonradiative Auger recombination, and Joule heating. To realize ultrabright and efficient PeLEDs, several strategies have been applied. First, we designed an energy ladder to balance the electron and hole transport. Second, we optimized perovskite materials to possess reduced Auger recombination rates and improved carrier mobility. Third, we replaced glass substrates with sapphire substrates to better dissipate joule heat. Finally, by applying a current-focusing architecture, we achieved PeLEDs with a record luminance of 7.6 Mcd/m2. The devices can be operated at very high current densities (J) up to ~ 1 kA/cm2. Our work suggests a broad application prospect of perovskite materials for high-brightness LEDs and ultimately a potential for solution-processed electrically pumped laser diodes.
关键词： Joule heat,efficiency roll-off,Auger recombination,charge injection balance,high injection current density,ultrahigh brightness,perovskite light emitting diodes
更新于2025-09-23 15:19:57
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Biexciton Auger recombination in mono-dispersed, quantum-confined CsPbBr3 perovskite nanocrystals obeys universal volume-scaling
摘要： Auger recombination has been a long-standing obstacle to many prospective applications of colloidal quantum dots (QDs) ranging from lasing, light-emitting diodes to bio-labeling. As such, understanding the physical underpinnings and scaling laws for Auger recombination is essential to these applications. Previous studies of biexciton Auger recombination in various QDs established a universal scaling of biexciton lifetime (τXX) with QD volume (V ): τXX = γV. However, recent measurements on perovskite nanocrystals (NCs), an emerging class of enablers for light harvesting and emitting applications, showed significant deviations from this universal scaling law, likely because the measured NCs are weakly-confined and also have relatively broad size-distributions. Here we study biexciton Auger recombination in mono-dispersed (size distributions within 1.7%–9.0%), quantum-confined CsPbBr3 NCs (with confinement energy up to 410 meV) synthesized using a latest approach based on thermodynamic equilibrium control. Our measurements clearly reproduce the volume-scaling of τXX in confined CsPbBr3 QDs. However, the scaling factor γ (0.085 ± 0.001 ps/nm3) is one order of magnitude lower than that reported for CdSe and PbSe QDs (1.00 ± 0.05 ps/nm3), suggesting unique mechanisms enhancing Auger recombination rate in perovskite NCs.
关键词： biexciton,Auger recombination,perovskite nanocrystals,ultrafast spectroscopy,volume-scaling
更新于2025-09-23 15:19:57
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Influence of morphology on the blinking mechanisms and the excitonic fine structure of single colloidal nanoplatelets
摘要： Colloidal semiconductor nanoplatelets with a similar electronic structure as quantum wells have recently emerged as exciting materials for optoelectronic applications. Here we investigate how morphology affects important photoluminescence properties of single CdSe and core/shell CdSe/CdZnS nanoplatelets. By analyzing photoluminescence intensity-lifetime correlation and second-order photon correlation results, we demonstrate that, irrespective of the morphology, Auger recombination plays only a minor role in dictating the blinking behavior of the nanoplatelets. We find that a rough shell induces additional non-radiative channels presumably related to defects or traps of an imperfect shell. Furthermore, polarization-resolved spectroscopy analysis reveals exciton fine-structure splitting of the order of several tens of meV in rough-shell nanoplatelets at room temperature, which is attributed to exciton localization and is substantiated by theoretical calculations taking into account the nanoplatelet shape and electron–hole exchange interaction.
关键词： exciton fine structure,photoluminescence,nanoplatelets,blinking,Auger recombination
更新于2025-09-19 17:15:36