1：Experimental Design and Method Selection:

The study involves investigating the electroluminescence (EL) from p-i-n heterostructures with In0.5Ga0.5As quantum dots embedded in a GaAs/Al0.3Ga0.7As quantum well. The methodology includes measuring EL spectra as a function of temperature and applied bias to understand carrier dynamics and recombination mechanisms.

2：5Ga5As quantum dots embedded in a GaAs/Al3Ga7As quantum well. The methodology includes measuring EL spectra as a function of temperature and applied bias to understand carrier dynamics and recombination mechanisms. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: Two samples were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. Sample A is a p-i-n heterostructure with QDs embedded within a QW, and Sample B includes distributed Bragg reflector (DBR) stacks for comparison.

3：List of Experimental Equipment and Materials:

The experimental setup includes a customized copper sample holder inside an ARS CS204-DMX-20 closed cycle cryostat for temperature-dependent measurements, an Agilent E4980A LCR meter for applying electrical bias, a CCS200 spectrometer (Thorlabs) for measuring EL spectra, and a Michelson interferometer for temporal coherence measurements.

4：Experimental Procedures and Operational Workflow:

EL spectra were measured under forward bias levels above which the device capacitance goes to negative. The spectral bandwidth of the spectrometer was kept at <2 nm. Temporal coherence was measured using a piezo-controlled Michelson interferometer.

5：Data Analysis Methods:

The data analysis involved fitting the EL peak energy and FWHM as a function of bias currents and temperatures, and analyzing the temporal coherence of EL emissions using the first order correlation function g(1)(τ = 0).