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Ellipsometric study on optical properties of hydrogen plasma-treated aluminum-doped ZnO thin film
摘要： Aluminum-doped zinc oxide (AZO) thin films were prepared by radio frequency (RF) sputtering at room temperature, and then post-treated by hydrogen (H2) plasma at different durations. After H2 plasma treatment under the condition of 10 W, 200 °C and 3.0 Hours, the resistivity showed a dramatically decrease from 1.6 Ω cm to 3.4 × 10?3 Ω cm, while the transmittance at the wavelength of 550 nm was improved from 90.5% to 96.0%. The optical constants of H2 plasma-treated AZO thin films were detailed characterized by a varied angle spectroscopic ellipsometer. The results show that the refractive index n decreases in the entire measured wavelength range of 350–1100 nm, while the extinction coefficient k decreases in the short wavelength range and changes negligibly at the long wavelength range. These results can provide guidelines for the design and optimization of AZO thin film-based optoelectronic applications.
关键词： Resistivity,Spectroscopic ellipsometer,Transmittance,Optical constants,Hydrogen plasma treatment,Aluminum-doped zinc oxide
更新于2025-11-14 17:03:37
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Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering
摘要： A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.
关键词： Thin films,Schottky contact,Chromium-doped Zinc oxide,Sputtering,Photodetectors
更新于2025-09-23 15:23:52
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Plasma-Assisted Chemical Vapor Synthesis of Aluminum-Doped Zinc Oxide Nanopowder and Synthesis of AZO Films for Optoelectronic Applications
摘要： Transparent conducting oxide aluminum-doped zinc oxide (AZO) nanoparticles were synthesized by a plasma-assisted chemical vapor synthesis route using zinc nitrate and aluminum nitrate as the precursors. The injected precursors vaporized in the plasma flame, followed by vapor-phase reaction and subsequent quenching of the vaporized precursors, producing nanosized AZO powder. The amount of aluminum nitrate was varied to obtain samples with 2 at.%, 4 at.% and 8 at.% Al, designated as AZO1, AZO2 and AZO3, respectively. The XRD patterns of the AZO1 and AZO2 nanoparticles indicated the presence of a wurtzite structure without any alumina peaks except in the AZO3 sample, and scanning electron microscopy micrographs revealed spherical particles. The magnetization measurements revealed a ferromagnetic behavior at room temperature in the AZO1 sample, and the ferromagnetic order is decreased in the high field region with an increase in the Al doping amount. AZO thin films were deposited on glass substrates by spin-coating a dispersion of nanoparticles. All the AZO films had a hexagonal wurtzite structure and exhibited a c-axis preferred orientation perpendicular to the substrate. The Hall effect measurements yielded a minimum resistivity of 9.9 × 10?? Ω cm for the AZO2 film and optical transmission of 80% for both the AZO1 and AZO2 films. However, with 8 at.% Al in the AZO3 film, deterioration in crystallinity, electrical and optical properties were observed. Post-annealing of the AZO1 film in H2 atmosphere caused a significant decrease in resistivity from 1.2 × 10?3 Ω cm to 8.7 × 10?? Ω cm. The optical band gap energies of the AZO films were determined from the transmission spectra. The blue shift in the band gap from 3.2 eV to 3.28 eV, observed with an increase in Al doping, was interpreted by the Burstein–Moss effect. The photoluminescence spectra of the AZO films revealed a UV near-band edge emission and a green emission peak.
关键词： Plasma,optoelectronics,doped-zinc oxide,chemical vapor synthesis
更新于2025-09-23 15:22:29
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Design of color tunable thin film polymer solar cells for photovoltaics printing
摘要： Color tunable thin film polymer solar cells have demonstrated the potentials of a wide applications in photovoltaics printing, which is significant for ink pollution reduction and energy saving. This work presents a new effective approach to realize color-tuning photovoltaic cells with optical microcavity structures. Aluminum-doped zinc oxide is utilized as electron transport layer material. With its high electrical conductivity, the thickness tuning range can be quite large, which means the cavity length has a wide variation range. It thus provides sufficient space for optical thin film design to obtain multi colors. By the transfer matrix method, device reflection and absorption spectra are numerically investigated. Based on that, the optical principles for color tunability are explored. In further step, the relationship between device photovoltaics performance and reflective colors are also discussed. Finally, the color coordinates and luminosities are calculated. As results, the colors of the devices designed are capable to cover a relatively large region in Commission Internationale de l′Eclairage (CIE) 1931 x, y chromaticity diagram, which is available to be integrated into the advertisement poster boards, building wall printing and other display applications.
关键词： optical microcavity,thin film polymer solar cells,aluminum-doped zinc oxide,photovoltaics printing,color tunable
更新于2025-09-23 15:21:01
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Effects of background gases and pressure in pulsed laser deposition of Al-doped ZnO
摘要： Background gases (O2, He or Ar) with the pressure from ~ 10?3 Pa to 133.3 Pa are used in 355 nm laser deposition of Al-doped ZnO at room temperature. The effects of these gases and pressure on plasma formation are studied by optical emission spectroscopy (OES) and time of flight (TOF) measurement. The OES results show that the emission intensity of the species in O2 and Ar decrease slightly and then increase exponentially above ~ 5 Pa. The emission intensity in Ar is the highest, followed by emission in O2 whilst the emission in He is low and weakly depend on background gas pressure. TOF measurements indicate that the ion velocity decrease with increasing O2 and Ar pressure at about 5–10 Pa. The ion velocity is highest in He while the ion velocities in O2 and Ar are similar. Thin-film samples deposited in different gas at 2.6 Pa are amorphous, but those deposited at 133.3 Pa are crystalline and exhibit different morphologies and optical properties depending on type of gas. Samples deposited in O2 are highly transparent but those deposited in He and Ar contain nano and micron-sized structures with <50% transmittance. In addition, Zn crystallites are detected by X-ray diffraction.
关键词： Pulsed laser deposition,Background gases,Aluminum-doped zinc oxide,Pressure,Laser produced plasma,Nanostructured films
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 11th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment, and Management ( HNICEM ) - Laoag, Philippines (2019.11.29-2019.12.1)] 2019 IEEE 11th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment, and Management ( HNICEM ) - Voltage Characterization of Magnesium-doped Zinc Oxide by Electrodeposition Method for Solar Photovoltaic (PV) Cells
摘要： The research paper adapted the study of Rajpal and Kumar (2016). The Magnesium (Mg)-doped Zinc Oxide (ZnO) was prepared using the electrodeposition method. The samples obtained from the experiment were then collated to observe the photoconductivity value and the percentage of Voltage Regulation of the plates. Three (3) different tilt angle orientation were utilized in gathering the data of the Voltage Regulation percentage (%VR) and photoconductivity. The photoconductivity value acquired from the undoped plate is 0.7083 while, for the doped plates are 0.8438V, 0.6897V and 0.7204V. On the other hand, the %VR acquired for 0?, 13? and 20° were 1.283%, 5.820% and 3.456%, respectively. Moreover, the percent Battery Charge collated from the experiment are 0.39%, -1.20% and 1.11%, respectively. Further, the experiments showed that sun exposure and temperature have a significant impact on the electrical conductivity and output of the cells.
关键词： electrodeposition,tilt angles,Magnesium-doped,zinc oxide
更新于2025-09-23 15:21:01
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Enhanced efficiency of quantum dot light-emitting diode by sol-gel derived Zn1-xMgxO electron transport layer
摘要： In this study, sol-gel derived Zn1-xMgxO (ZMO) is proposed as an electron transport layer (ETL) for solution-processed quantum-dot light-emitting diodes (QLEDs). It is demonstrated that the increase of Mg content in Zn1-xMgxO films from 0% to 20% causes a dramatic suppression of electron current, which is attributed to the lifting of conduction band minimum and reduction of electron mobility. As a result of Mg-doping, the charge carrier balance might be achieved in the QLED with the Zn0.85Mg0.15O layer resulting in maximum external quantum efficiency of 5.74% and current efficiency of 18 cd·A-1, which are over 3-fold higher than in the case of the device with ZnO layer. Improved device performance is further explained by reduced exciton quenching at QDs/ZMO interface, which is confirmed by time-resolved PL experiments. Obtained results indicate that sol-gel derived ZMO is a promising candidate for ETL in quantum-dot based optoelectronic devices.
关键词： quantum dot,doped zinc oxide,sol-gel process,light-emitting diode,electron transport layer
更新于2025-09-23 15:19:57
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Quantum dot light-emitting diodes with an Al-doped ZnO anode
摘要： A study of a hybrid ZnCdSeS/ZnS quantum dot light-emitting diodes (QLEDs) device fabricated with indium tin oxide (ITO)-free transparent electrodes is presented. Al-doped zinc oxide (AZO) prepared by magnetron sputtering is adopted in anode transparent electrodes for green QLEDs with different sputtering pressures. The Kelvin probe force microscopy measurement shows that AZO has a work function of approximately 5.0 eV. The AZO/poly(ethylene-dioxythiophene)/polystyrenesulfonate (PEDOT:PSS) interface can be adjusted by the sputtering pressures, which was confirmed by the hole-only devices. The AZO films with low surface roughness can form a good AZO/PEDOT:PSS interface, which can increase the holes’ injection, and result in improved charge balance. The maximum current efficiency, luminance and external quantum efficiency of the optimized QLEDs devices under a sputtering pressure of 1 mTorr can achieve values of 50.75 cd/A, 102,500 cd/m2 and 12.94%, respectively.
关键词： radio-frequency magnetron sputtering,Al-doped zinc oxide,quantum light-emitting diode,transparent electrode
更新于2025-09-19 17:13:59
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Influence of Silicon Layers on the Growth of ITO and AZO in Silicon Heterojunction Solar Cells
摘要： In this article, we report on the properties of indium tin oxide (ITO) deposited on thin-film silicon layers designed for the application as carrier selective contacts for silicon heterojunction (SHJ) solar cells. We find that ITO deposited on hydrogenated nanocrystalline silicon (nc-Si:H) layers presents a significant drop on electron mobility μe in comparison to layers deposited on hydrogenated amorphous silicon films (a-Si:H). The nc-Si:H layers are not only found to exhibit a larger crystallinity than a-Si:H, but are also characterized by a considerably increased surface rms roughness. As we can see from transmission electron microscopy (TEM), this promotes the growth of smaller and fractured features in the initial stages of ITO growth. Furthermore, secondary ion mass spectrometry profiles show different penetration depths of hydrogen from the thin film silicon layers into the ITO, which might both influence ITO and device passivation properties. Comparing ITO to aluminum doped zinc oxide (AZO), we find that AZO can actually exhibit superior properties on nc-Si:H layers. We assess the impact of the modified ITO Rsh on the series resistance Rs of SHJ solar cells with >23% efficiency for optimized devices. This behavior should be considered when designing solar cells with amorphous or nanocrystalline layers as carrier selective contacts.
关键词： secondary ion mass spectrometry (SIMS),indium tin oxide (ITO),series resistance,Aluminum doped zinc oxide (AZO),transparent conductive oxide (TCO),transmission electron microscopy (TEM),silicon heterojunction (SHJ)
更新于2025-09-16 10:30:52
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Highly efficient flexible organic light-emitting diodes based on a high-temperature durable mica substrate
摘要： Muscovite mica is expected to show great potential in flexible optoelectronics due to its superb temperature tolerance, high transmittance, chemical stability, and mechanical durability. This flexible substrate produces sputtered transparent conducting electrodes (TCEs) with excellent film quality with high transmittance and conductivity. In this study, a designed composite TCE consisting of aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) is proposed to simultaneously maximize flexibility and conductivity. Blue-, green-, and red-emitting flexible organic light-emitting diodes (FOLEDs) using composite TCEs on mica exhibited satisfactory performance with maximum respective electroluminescence efficiencies of 18.1% (38.7 cd/A), 18.7% (66.2 cd/A), and 13.3% (22.2 cd/A). Furthermore, the green-emitting FOLEDs were modified to construct tandem FOLEDs, giving a higher peak efficiency of 27.9% (93.3 cd/A) and saturated green emission. These results can serve as a useful reference for future work on composite TCEs on mica for FOLEDs in display and lighting applications.
关键词： Organic light-emitting diodes (OLEDs),Flexible,Tandem,Indium tin oxide (ITO),Muscovite mica,Aluminum-doped zinc oxide (AZO)
更新于2025-09-16 10:30:52