- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Editorial for the Special Issue on Micro-Resonators: The Quest for Superior Performance
摘要: Micro-resonators have reached a distinctive level of maturity due to the accumulated wealth of knowledge on their design, modeling, and manufacturing during the past few decades. Alongside this tremendous scientific progress, micro-resonators are now commonly found in most electronic systems. In this Special Issue, our attempt was to look deeper into less-common topics in this field, such as the nonlinear operation of micro-resonators that are envisioned to play a more important role with the evolution of this technological area.
关键词: Nonlinear Operation,Micro-Resonators,Fabrication,Frequency Stability,Tuning Range,Quality Factor
更新于2025-09-04 15:30:14
-
[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - High Voltage GaN Switch Reliability FIT rates and PPM reliability based on standards from: Joint Electron Device Engineering Council (JEDEC), Automotive Electronics Council (AEC) and German Electrical and Electronic Manufacturers' Association (ZVEI)
摘要: Adoption of any semiconductor technology by the power conversion market requires the understanding of fundamental failure modes, acceleration factors and reliability statistics. This study shows how GaN products from Transphorm can meet this challenge, especially in the critical High Voltage Off State (HVOS) reliability stress test. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This market requirement can be addressed by testing to failure statistically significant samples of devices, and analyzing the data with appropriate models. The methods developed for measuring GaN reliability on large samples will be discussed, which are wholly based on existing industrial and automotive standards. The resulting data can be used to supplement qualification testing results when the failure modes and acceleration factors are well understood.
关键词: GaN,FIT,PPM,HEMT,acceleration factor,power electronics,reliability
更新于2025-09-04 15:30:14