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Temperature Dependent Electrical Transport Properties of High Carrier Mobility Reduced Graphene Oxide Thin Film Devices
摘要： We confirm variable electrical transport properties of high mobility reduced graphene oxide (RGO) thin films fabricated by pulse laser deposition. The temperature dependent (5K–350K) four terminal electrical transport property measurements range hopping and thermally activated transport mechanism of the charge carriers at low (5K–210K) and high temperature (210K–350K) regions, respectively. The calculated localization length, the density of states near the Fermi level (EF), hopping energy, and Arrhenius energy gap provide useful information to explain the excellent electrical properties of the RGO films. Hall mobility measurement confirms p-type characteristics of the thin films. The charge carrier Hall mobility can be engineered by tuning the growth parameters, and the measured maximum mobility was 1596 cm2v-1s-1. The optimization of the improved electrical property is well supported by structural properties such as the defect density, average size of sp2 clusters and degree of reduction, which were investigated by Raman spectroscopy and X-ray diffraction analysis.
关键词： PLD,variable range hopping,and Raman spectroscopy,hall mobility,Reduced graphene oxide,localization length
更新于2025-09-23 15:22:29
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Effect of Si substrate modification on improving the crystalline quality, optical and electrical properties of thermally-evaporated BaSi2 thin-films for solar cell applications
摘要： We have grown orthorhombic barium disilicide (BaSi2) thin-films on modified silicon (Si) substrates by a thermal evaporation method. The surface modification of Si substrate was performed by a metal-assisted chemical etching method. The effects of etching time te on crystalline quality as well as optical and electrical properties of the BaSi2 films were investigated. The obtained results showed that substrate modification can enhance the crystalline quality and electrical properties; reduce the light reflection; and increase the absorption of the BaSi2 thin-films. The te of 8 s was chosen as the optimized condition for surface modification of Si substrate. The achieved inferred short-circuit current density, Hall mobility, and minority carrier lifetime of the BaSi2 film at te of 8 s were 38 mA/cm2, 273 cm2/Vs, and 2.3 μs, respectively. These results confirm that the BaSi2 thin-film evaporated on the modified Si substrate is a promising absorber for thin-film solar cell applications.
关键词： hall mobility,substrate modification,photoresponse,silicide semiconductor,Barium disilicide,minority carrier lifetime,optical property,thermal evaporation
更新于2025-09-19 17:13:59