研究目的
To investigate the temperature-dependent electrical transport properties of high carrier mobility reduced graphene oxide (RGO) thin films fabricated by pulse laser deposition, and to understand the transport mechanisms and optimize electrical properties.
研究成果
The RGO thin films exhibit high carrier mobility up to 1596 cm2V?1s?1, with transport mechanisms transitioning from Efros-Shklovskii variable range hopping at low temperatures to Arrhenius activation at high temperatures. Optimization of growth parameters, such as laser shots, controls defect density and sp2 cluster size, leading to improved electrical properties. This work provides insights for future electronic device applications of large-area RGO films.
研究不足
The study is limited to RGO films fabricated by PLD on specific substrates; other fabrication methods or substrates may yield different results. The defect density and disorder in films affect mobility, and the crossover between transport mechanisms is not fully generalized. Temperature range is up to 350K, and measurements are under controlled inert environments, which may not represent all operational conditions.
1：Experimental Design and Method Selection:
The study uses pulse laser deposition (PLD) to fabricate RGO thin films on Si/SiO2 substrates with a graphene seed layer. Temperature-dependent electrical transport measurements (5K-350K) are conducted to analyze charge carrier mechanisms using Arrhenius and variable range hopping models. Structural characterization is done via Raman spectroscopy and X-ray diffraction.
2：Sample Selection and Data Sources:
RGO thin film samples (A, B, C, D, E) are fabricated with varying numbers of laser shots (1000 to 10000 shots) to control properties. Data is collected from electrical measurements and spectroscopic analyses.
3：List of Experimental Equipment and Materials:
Equipment includes PLD system (Excel Instrument, PLD-STD-18), KrF excimer laser (Lambda Physik, COMPEX201), Raman spectrometer (Horiba Labram), X-ray diffractometer (Bruker D8 Discover), four-point probe setup, Hall measurement system (Keithley 220 current source, Keithley 182 voltmeter), SQUID magnetometer. Materials include graphite target, Si/SiO2 substrates, indium and gold for contacts.
4：Experimental Procedures and Operational Workflow:
Fabrication involves PLD at 700°C with specific laser parameters. Characterization includes Raman spectroscopy with 532.06 nm laser, XRD with CuKα source, and electrical measurements using four-probe and Hall setups in temperature-controlled environments.
5：06 nm laser, XRD with CuKα source, and electrical measurements using four-probe and Hall setups in temperature-controlled environments.
Data Analysis Methods:
5. Data Analysis Methods: Data is analyzed using Origin Pro software for curve fitting. Electrical parameters are calculated using equations for mobility, carrier density, activation energy, localization length, and density of states. Models include Arrhenius and VRH (Efros-Shklovskii and Mott) for transport mechanisms.
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