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[IEEE 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - Chengdu, China (2018.5.7-2018.5.11)] 2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT) - A 300GHz Monolithic Integrated Amplifier in 0.5-μm InP Double Heterojunction Bipolar Transistor Technology
摘要： We present a compact, 6-stage terahertz monolithic integrated circuit (TMIC) amplifier with an operating frequency of 275-310GHz, formed by common-base configured 0.5 um InP Double Heterojunction Bipolar Transistor (DHBT) and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >7.4dB at 300GHz. The peak gain is 12.5dB at 280GHz. This is the first time reported InP DHBT TMIC amplifier operating in H-band employing TFM in china. The total size of this 6-stage amplifier is only 1.7 mm ╳0.9 mm.
关键词： thin-film microstrip (TFM),Indium phosphide (InP),H-band,Amplifier,Heterojunction bipolar transistors (HBTs),Terahertz monolithic integrated circuit (TMIC)
更新于2025-09-23 15:22:29
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[IEEE 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Odessa, Ukraine (2018.9.4-2018.9.7)] 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS) - Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As
摘要： The paper presents the results of numerical experiments on the oscillation generation using the n+-n-n+ transfer electron device based on InGaP/InPAs graded-gap semiconductor compounds at different Ga and As distributions. The active region of the diode is 2.5 μm with an ionized impurity concentration of 1016 cm–3. It is paper shown that the output power and the efficiency of Gunn generators increase several times when the InGaP/InPAs graded-gap semiconductors are used. The reasons for this increase are considered. The highest power of 11.3 kW/cm2 with efficiency of 10.2% at frequency of 40 GHz belong to In0.4Ga0.6P/InP0.4As0.6 diode.
关键词： graded-gap semiconductor,indium gallium phosphide,intervalley electron transfer,indium phosphide with arsenide,Gunn diode,transfer electron device,output power
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell
摘要： The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while ?ll factors (FF) are above 80%. At one-sun illumination, reducing one junction’s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% ef?ciency loss). These results demonstrate the potential of the HBTSC concept to produce high-ef?ciency independently connected double-junction solar cells.
关键词： photovoltaic cells,independent current,multi terminal,gallium indium phosphide,gallium arsenide,double junction
更新于2025-09-23 15:21:01
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<i>(Invited)</i> Electrochemical Formation of Nanoporous Indium Phosphide in KOH Electrolytes
摘要： Anodization of highly doped n-InP in KOH can result in a nanoporous sub-surface layer. Pores originate from surface pits and an isolated porous domain is initially formed beneath each pit. Domains are separated from the surface by a thin non-porous layer and each is connected to the electrolyte by its pit. Pores emanate along the <111>A directions to form truncated tetrahedral domains. We propose a three-step model of electrochemical pore formation: (1) hole generation at pore tips, (2) hole diffusion and (3) electrochemical oxidation of the semiconductor to form etch products. Step 1 determines the overall etch rate. However, if the kinetics of Step 3 are slow relative to Step 2, then etching can occur at preferred crystallographic sites leading to pore propagation in preferential directions. Pore width decreases with increasing anodization temperature and with increasing KOH concentration up to 9 mol dm-3, above which it decreases. At low current densities pores have sharp tips and triangular cross-sections; at higher current densities, the pore tips and cross-sections become more rounded while the pore width decreases. These observations are explained by the three-step model.
关键词： electrochemical formation,nanoporous,pore propagation,indium phosphide,KOH electrolytes
更新于2025-09-23 15:21:01
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Radiation-resistant solar cells for space
摘要： Solar cells made with nanowires can tolerate up to 40 times as much high-energy radiation as those made of flat crystalline films, making the nano versions well suited for powering satellites and spacecraft. Harry A. Atwater of the California Institute of Technology and colleagues fabricated solar cells with a light-absorbing layer made of an array of either 3 μm long gallium arsenide or 2 μm long indium phosphide nanowires grown vertically from the substrate. The researchers irradiated the devices with protons at 100 and 350 keV, comparable to what they would experience in space. Compared with thin-film solar cells made from the same materials, the nanowire solar cells withstood 10–40 times as many protons before their current degraded. Simulations showed that energetic protons shoot out of nanowires, minimizing damage, while they lodge in crystalline films. The researchers think that the higher surface area of the nanowires makes it easier for defects to migrate out of the structures.
关键词： solar cells,space,indium phosphide,radiation-resistant,nanowires,gallium arsenide
更新于2025-09-23 15:19:57
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Influence of photoactivation on luminescent properties of colloidal InP@ZnS quantum dots
摘要： The use of photo- and thermoactivation during the liquid-phase synthesis of colloidal quantum dots was found to yield luminescing InP@ZnS quantum dots with a luminescence quantum yield close to unity. Activation mode was found to have little or no influence on the maximal luminescent efficiency but affect particle size distribution. Compared to thermal activation, photoactivation ensures the formation of more monodispersed particles.
关键词： Colloidal quantum dots,Thermoactivation,Indium phosphide,Luminescence quantum yield,Photoactivation
更新于2025-09-23 15:19:57
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Controlling Nucleation Process of InP/ZnS Quantum Dots Using Zeolite as A Nucleation Site
摘要： As a representative of III-V semiconductor materials, InP/ZnS quantum dots are regarded as the star material in the field of light-emitting devices due to their low toxicity and suitable luminescence range. However, there are still some major problems in the preparation process of InP/ZnS QDs, such as phosphine precursors are expensive and difficult to preserve and the nucleation time of short wavelength InP/ZnS QDs is too short and the size distribution is too large. In this paper, we'll replace the traditional tris(trimethylsilyl)phosphine with the tris(diethylamino)phosphine as a cheaper phosphine precursor and propose a novel and convenient method for adjusting the luminescence wavelength of InP/ZnS QDs. Different from the traditional method to adjust the emission wavelength by changing the nucleation time, the emission wavelength of InP/ZnS QDs was regulated by changing the number of initially formed cores. Zeolites do duty for providing a nucleation site for the InP cores. The InP/ZnS QDs emitted from 522 nm to 589 nm were obtained. Moreover, the obtained InP/ZnS QDs has good monochromaticity, the minimum half-width (half-full width) up to 48 nm. This method provides a new way to adjust the size of quantum dots with good performance.
关键词： Zeolites,Indium phosphide,Color tunable,Quantum dots,nucleation site
更新于2025-09-23 15:19:57
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Anodic Formation of Nanoporous Indium Phosphide in KOH Electrolytes: Effects of Temperature and Concentration
摘要： Anodization of n-InP electrodes was carried out over a range of temperatures and KOH concentrations. Scanning electron microscopy showed <111>A aligned pore growth with pore width decreasing as the temperature was increased. This variation is explained in terms of the relative rates of electrochemical reaction and hole diffusion and supports the three-step model proposed earlier. As temperature is increased, both the areal density and width of surface pits decrease resulting in a large increase in the current density through the pits. This explains an observed decrease in porous layer thickness: pits sustain mass transport at the necessary rate for a shorter time before precipitation of etch products blocks the pores. As the concentration of KOH is increased, both pore width and layer thickness decrease to minima at ～9 mol dm?3 after which they again increase. This variation of pore width is also explained by the three-step model and the variation in layer thickness is explained by mass transport effects. Layer porosity follows a similar trend to pore width, further supporting the three-step model. A transition from porous layer formation to planar etching is observed below 2 mol dm?3 KOH, and this is also explained by the three-step model.
关键词： concentration,three-step model,indium phosphide,anodization,nanoporous,KOH,temperature
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Investigating Industrial Metallization Solutions for Double-side Contact Passivated biPoly Solar Cells
摘要： We present the design and fabrication of suspended optical waveguides on indium phosphide platform for use in an optical buffer device with MEMS actuation, in which the optical delay can be achieved by changing the spacing of the waveguides by electrostatic actuation. The optical and mechanical properties of the waveguides and pillar supports are modeled, and different MEMS actuation schemes are simulated. We also present fabrication and characterization results of the epitaxially grown sample structure and of the suspended waveguide device, exhibiting two parallel waveguides with submicron dimensions separated by a 400-nm air gap, and suspended at 40-μm intervals by S-shaped supports.
关键词： microelectromechanical systems,indium phosphide,optical waveguides,III-V semiconductor materials,optical buffering
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Photoluminescence Excitation Spectroscopy Characterization of Surface and Bulk Quality for Early-Stage Potential of Material Systems
摘要： Photoluminescence Excitation Spectroscopy (PLE) is a contactless characterization technique to quantify Shockley-Reed-Hall (SRH) lifetimes and recombination velocities in direct band gap experimental semiconductor materials and devices. It is also useful as to evaluate surface passivation and intermediate fabrication processes, since it can be implemented without the need for development of effective contact technologies. In this paper, we present a novel experimental PLE system for precision-based quantification of the aforementioned parameters as well as a system for which absolute PLE characterization may occur. Absolute PLE measurements can be used to directly calculate VOC for new photovoltaic (PV) material systems and devices. Key system capabilities include a continuous excitation spectrum from 300 nm –1.1 μm, automated characterization, up to 1 nm wavelength resolution (up to 60x higher than prior work), and a reduced ellipsometry requirement for post-processing of data. We utilize a GaAs double heterostructure (DH) and an InP crystalline wafer as calibration standards in comparison with data from an LED-based PLE to demonstrate the validity of the results obtained from this new system.
关键词： photovoltaic cells,indium phosphide,charge carrier lifetime,gallium arsenide,photoluminescence
更新于2025-09-19 17:13:59