1：Experimental Design and Method Selection:

Anodization of highly doped n-InP in KOH electrolytes was performed to study the formation of nanoporous layers. The study involved linear potential sweeps and galvanostatic experiments under various conditions (temperature, concentration, current density).

2：Sample Selection and Data Sources:

Monocrystalline, sulfur-doped, n-type indium phosphide (n-InP) wafers were used. The wafers were polished on one side with a surface orientation of (100) and a carrier concentration in the range 3–6 × 1018 cm-

3：List of Experimental Equipment and Materials:

A CH Instruments Model 650A Electrochemical Workstation, Hitachi S-4800 field-emission scanning electron microscope (FE SEM), FEI 200 FIB workstation, JEOL (2000FX and 2011) transmission electron microscope.

4：Experimental Procedures and Operational Workflow:

Anodization was carried out in aqueous KOH at room temperature in the absence of light using a linear potential sweep at 2.5 mV s-1. A conventional three-electrode cell configuration was used, employing a platinum counter electrode and a saturated calomel electrode (SCE).

5：5 mV s-A conventional three-electrode cell configuration was used, employing a platinum counter electrode and a saturated calomel electrode (SCE). Data Analysis Methods:

5. Data Analysis Methods: SEM and TEM were used to examine the morphology of the porous layers. The pore width, layer thickness, and porosity were measured and analyzed.