1：Experimental Design and Method Selection:

The research was carried out by means of a three-level model of IET effect in the graded-gap semiconductors based on the solution of the Boltzmann equation for the case of a displaced Maxwellian distribution of electrons.

2：Sample Selection and Data Sources:

A diode with an n+–n–n+ doping profile on the basis of Inx(z)Ga1-x(z)Py(z)As1-y(z) is simulated. The length of the active region is 2.5 μm; the concentration of ionized donors in it is 1016 cm–

3：5 μm; the concentration of ionized donors in it is 1016 cm–List of Experimental Equipment and Materials:

3. 3. List of Experimental Equipment and Materials: The model represents a system of equations consisting of continuity equations, the current density equations and the energy balance equations for each of the three non-equivalent valleys of the semiconductor conduction band, as well as the Poisson equations.

4：Experimental Procedures and Operational Workflow:

The system of equations is solved by a numerical method ('counter pro-race'). The model is considered when a sinusoidal voltage with a constant component is applied to the diode, which corresponds to the placement the diode in a single-circuit resonator.

5：Data Analysis Methods:

The output data are the dynamic distributions of the electron concentration, their energy, current density, electric intensity, the dependence of the average current density flowing in the diode on time, the power and generation efficiency of electrical oscillations.