- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Green-laser-doped selective emitters with separate BBr3 diffusion processes for high-efficiency n-type silicon solar cells
摘要： Laser-doped boron selective emitters are an ideal candidate for enabling less emitter recombination, lower contact resistance and better blue response of efficient n-type silicon solar cells. However, the low boron concentration of the borosilicate glasses formed during boron diffusion processes and the implementation of ultraviolet lasers have hindered the commercialization of laser-doped boron selective emitters. In this contribution, separate BBr3 diffusion processes for green-laser-doped selective emitters are demonstrated. Laser doping processes were conducted between (1) borosilicate glass deposition and boron driving in and (2) post-oxidation, achieving the optimized laser doped selective emitter with the Rsheet,pt/Rsheet,ptt of 95.0 Ω/□/54.3 Ω/□, accompanying with the pt profile of Nmax < 1.4? 1019 cm(cid:0) 3. By comparison to the homogeneous emitter with sheet resistance of 88.9 Ω/□, J0e, total of 45.3 fA/cm2 and ρc, metal of 2.9 mΩ/cm2, the employment of the optimum laser doped selective emitter has resulted in the J0e, total of 31.1 fA/cm2 and the ρc, metal of 1.0 mΩ/cm2. Finally, the improvement of simulated VOC (699.6 mV), FF (81.38%) and efficiency (23.13%) were obtained by using the optimized laser doped SEs, compared with the simulated VOC (694.5 mV), FF (81.14%) and efficiency (22.89%) of the reference. Separate BBr3 diffusion processes for green-laser-doped selective emitters demonstrate the employment of industrial green laser and boron diffusion furnace, instead of expensive ultraviolet laser and other complex boron resources, indicating a promising potential for industrial feasibility.
关键词： Driving in,Separate BBr3 diffusion,N-type silicon solar cells,Post-oxidation,Green-laser-doping,Selective emitter
更新于2025-09-19 17:13:59
-
Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
摘要： Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As a result, Al doping depth is significantly increased. The multiple shots of the expanded pulses are also found to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.
关键词： excimer laser,p-type silicon carbide,aluminum doping,silicon carbide,laser doping,optical pulse stretcher
更新于2025-09-16 10:30:52
-
AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Inline deposited PassDop layers for rear side passivation and contacting of p-type c-Si PERL solar cells with high bifaciality
摘要： We investigate stacks of aluminum oxide (Al2O3) and boron-doped silicon nitride (SiNX:B) layers for the rear side passivation and local doping of p-type silicon solar cell samples aiming for the realization of bifacial passivated emitter and rear locally diffused (biPERL) solar cells. The local p+-doped back surface field regions are formed by laser doping and are electrically contacted using commercially available screen-printed and fired silver-aluminum (AgAl) or silver (Ag) contacts. This approach is referred to as “pPassDop”. Laser doping results in highly-doped silicon with sheet resistances as low as 15 ?/sq and surface doping concentrations up to 6×1019 cm-3. Low specific contact resistances around 1 m? cm2 and 5 m? cm2 are measured for the screen-printed and fired AgAl and Ag contacts, respectively. In addition, the influence of each individual layer within the pPassDop layer stack on the doping properties is investigated. In order to separate the impact of aluminum and boron doping, firstly the influence of the Al2O3 layer thickness (0 nm, 4 nm, 6 nm) below the SiNX:B capping layer is studied. Secondly, a conventional undoped SiNX capping layer is applied on a 6 nm-thick Al2O3 layer. The roles of each dopant are studied by measuring the doping profile and contact resistivity.
关键词： SiNX:B,laser doping,bifacial PERL solar cells,pPassDop,Al2O3
更新于2025-09-12 10:27:22
-
High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication
摘要： We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10?4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
关键词： excimer laser doping,4H-SiC,Al thin film,pn junction diode
更新于2025-09-12 10:27:22
-
[IEEE 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) - Sydney, Australia (2018.11.10-2018.11.17)] 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) - Laser Doped Layer in CdTe Diode Detectors Revealed by Synchrotron XPS
摘要： The X-ray photoelectron spectroscopy (XPS) with 650 eV synchrotron radiation was applied to study the modified surface in the CdTe diode-type X/γ-ray detectors fabricated by the laser-induced doping techniques. Semi-insulating (111)-oriented p-like CdTe single crystals, pre-coated with an In dopant film, were irradiated by nanosecond pulses of a YAG:Nd laser (λ = 1064 nm). The activation of the In/CdTe interface and doping were carried out by laser irradiation of the metalized samples from the In side or through the semiconductor which was transparent for such wavelength. In the first case, laser-induced doping was attributed to the generation of laser-stimulated stress and shock waves which incorporated In atoms into the CdTe surface region. In the second case, it was possible to directly affect the In/CdTe interface because laser radiation was strongly absorbed by a thin layer of the deposited In dopant film and the CdTe was dissolved in molten In. The distribution of In and Cd atoms with the depth and atomic bonding in the In/CdTe interface were analyzed based on the high resolution In 3d and Cd 3d peaks in the XPS spectra of the formed In/CdTe diode structures subjected to Ar-ion sputtering. The stoichiometry and transformation of electronic structure in the modified CdTe layer were analyzed. Rectification properties of the created In/CdTe/Au diodes were due to the formation of an In enriched submicron layer as result of laser-induced solid-phase or liquid-phase doping that depended on irradiation of the In/CdTe structure from the metalized or semiconductor side, respectively. The created In/CdTe/Au diodes have been promising for X/γ-ray detector application.
关键词： laser doping,XPS spectra,synchrotron radiation,CdTe crystals,p-n junction
更新于2025-09-11 14:15:04
-
High-performance WSe2 photodetector based on laser-induced p-n junction
摘要： Two-dimensional (2D) heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows a p-type behavior and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photocurrent emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 106, high photoresponsivity of 800 mA W-1 and short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronics applications.
关键词： photodetector,p-n junction,laser-doping,tungsten diselenide,oxidation product
更新于2025-09-11 14:15:04