研究目的
Investigating the construction of a lateral WSe2 p-n junction using a laser scanning technique for high-performance photodetector applications.
研究成果
A simple laser irradiation technique was employed to realize p-type doping in WSe2, leading to the construction of a lateral p-n junction. The resulting photodetector exhibited high photoswitching ratio, high photoresponsivity, and short photoresponse time with long-term stability and reproducibility, demonstrating the potential of laser-doping in fabricating efficient electronic and photoelectric devices based on 2D materials.
研究不足
The study focuses on the construction and characterization of a lateral WSe2 p-n junction using laser scanning, but the scalability and integration of this method into large-scale electronic devices are not addressed.
1：Experimental Design and Method Selection:
A laser scanning technique was employed to construct a lateral WSe2 p-n junction. The effects of laser irradiation on WSe2 were studied by AFM, Raman, PL, HRTEM, and XPS.
2：Sample Selection and Data Sources:
Multilayer 2D WSe2 was prepared on Si substrate by conventional mechanical exfoliation method.
3：List of Experimental Equipment and Materials:
Keyence VHX-600 optical microscope, AFM (Dimension 3100, Veeco), Renishaw inVia Raman microscope, HRTEM (JEM-2100F), Thermo Scientific Escalab 250Xi XPS system, Agilent B1500A semiconductor parameter analyzer.
4：Experimental Procedures and Operational Workflow:
The electrode patterns on multilayer WSe2 flakes were defined by a Microwriter ML laser direct-writing system. Cr/Au metal stacks were deposited by thermal evaporation. Part of WSe2 channel was irradiated with a 633 nm laser.
5：Data Analysis Methods:
The spatial distribution of the photoresponse was acquired using a motorized XYZ stage. The spectral response of the device was determined using laser diodes with different wavelengths.
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