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[Semiconductors and Semimetals] Future Directions in Silicon Photonics Volume 101 || Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
摘要： Si-photonics is based on the mature process technology developed over decades for the realization of ever more complex complementary metal oxide semiconductor (CMOS) integrated circuits on Si (001) exact wafer orientations. One of the key components for full scale functionality of Si-photonics circuitry is the integrated laser emitter, as also exemplified in this volume of “Semiconductors and Semimetals,” where the present status of development of various concepts for both hybrid as well as monolithic integrated laser sources on CMOS-compatible Si (001)-substrate are presented and discussed. These concepts for laser integration can be categorized into three main areas: (i) hybrid integration concepts by laser die or wafer bonding (see also volume 99 of this series, chapters “Quantum dot lasers for silicon photonics” by Arakawa et al.; “Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration” by Sun and Lourdudoss; “Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications” by Volz et al.; “Growth of III-V semiconductors and lasers on silicon substrates by MOCVD” by Shi and Lau), (ii) heteroepitaxial deposition of lattice-mismatched, standard III/V-semiconductor laser stacks (see also volume 99 of this series chapters “Building blocks of silicon photonics” by Vivien et al.; “Heterogeneously integrated III–V photonic devices on Si” by Matsuo), and (iii) lattice-matched epitaxial growth of Ga(NAsP)-based laser on CMOS-compatible Si (001) in this chapter.
关键词： Ga(NAsP),CMOS,monolithic integration,laser integration,Si-photonics
更新于2025-09-16 10:30:52
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III-V-on-Si photonic integrated circuits realized using micro-transfer-printing
摘要： Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs.
关键词： micro-transfer-printing,Silicon photonics,III-V-on-Si,photonic integrated circuits,laser integration
更新于2025-09-12 10:27:22