摘要： Si-photonics is based on the mature process technology developed over decades for the realization of ever more complex complementary metal oxide semiconductor (CMOS) integrated circuits on Si (001) exact wafer orientations. One of the key components for full scale functionality of Si-photonics circuitry is the integrated laser emitter, as also exemplified in this volume of “Semiconductors and Semimetals,” where the present status of development of various concepts for both hybrid as well as monolithic integrated laser sources on CMOS-compatible Si (001)-substrate are presented and discussed. These concepts for laser integration can be categorized into three main areas: (i) hybrid integration concepts by laser die or wafer bonding (see also volume 99 of this series, chapters “Quantum dot lasers for silicon photonics” by Arakawa et al.; “Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration” by Sun and Lourdudoss; “Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications” by Volz et al.; “Growth of III-V semiconductors and lasers on silicon substrates by MOCVD” by Shi and Lau), (ii) heteroepitaxial deposition of lattice-mismatched, standard III/V-semiconductor laser stacks (see also volume 99 of this series chapters “Building blocks of silicon photonics” by Vivien et al.; “Heterogeneously integrated III–V photonic devices on Si” by Matsuo), and (iii) lattice-matched epitaxial growth of Ga(NAsP)-based laser on CMOS-compatible Si (001) in this chapter.