研究目的
Investigating the use of micro-transfer-printing (μTP) technology for the realization of III-V-on-Si photonic integrated circuits (PICs) to enable cost-effective integration of III-V photodiodes and lasers on Si PICs.
研究成果
μTP is a powerful approach for integrating a variety of optoelectronic components on SiPh target wafers, enabling advanced Si PICs. The technique is well-suited for massively parallel integration of devices, including III-V SOAs, lasers, and photodiodes. Future work includes investigating wafer-level integration for industrial applications.
研究不足
The alignment accuracy provided by the μTP system may not be sufficient for all applications, requiring further optimization. The technique is still under investigation for wafer-level integration in a massively parallel way to be introduced to industry.
1：Experimental Design and Method Selection:
The study employs micro-transfer-printing (μTP) for integrating III-V devices on Si photonic integrated circuits (PICs) in a massively parallel manner without substantial modifications to the SiPh process flow.
2：Sample Selection and Data Sources:
Prefabricated III-V devices on their native substrate are used, with a focus on photodiodes and lasers.
3：List of Experimental Equipment and Materials:
A polydimethylsiloxane (PDMS) elastomeric stamp is used for the μTP process.
4：Experimental Procedures and Operational Workflow:
The process involves the pick-up and printing of III-V devices onto a target SiPh wafer using a PDMS stamp, followed by post-processing steps including removal of encapsulation, passivation, and electrical connection.
5：Data Analysis Methods:
The performance of the integrated devices is evaluated based on their optical and electrical characteristics.
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