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oe1(光电查) - 科学论文

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?? 中文(中国)
  • [IEEE 2020 International Conference on Computing, Networking and Communications (ICNC) - Big Island, HI, USA (2020.2.17-2020.2.20)] 2020 International Conference on Computing, Networking and Communications (ICNC) - On Performance of Multiuser Underwater Wireless Optical Communication Systems

    摘要: This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.

    关键词: power cycling test,physics-of-failure,Failure mechanism,lifetime model,insulated-gate bipolar transistor module,reliability

    更新于2025-09-23 15:21:01

  • [IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Manipulation of Biomolecules Into Nanogap by Plasmonic Optical Excitation for Highly Sensitive Biosensing

    摘要: This paper presents an apparatus and methodology for an advanced accelerated power cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated power cycling test can be performed under more realistic electrical operating conditions with online wear-out monitoring of tested power IGBT module. The various realistic electrical operating conditions close to real three-phase converter applications can be achieved by the simple control method. Further, by the proposed concept of applying the temperature stress, it is possible to apply various magnitudes of temperature swing in a short cycle period and to change the temperature cycle period easily. Thanks to a short temperature cycle period, test results can be obtained in a reasonable test time. A detailed explanation of apparatus such as configuration and control methods for the different functions of accelerated power cycling test setup is given. Then, an improved in situ junction temperature estimation method using on-state collector–emitter voltage VC E O N and load current is proposed. In addition, a procedure of advanced accelerated power cycling test and test results with 600 V, 30 A transfer molded IGBT modules are presented in order to verify the validity and effectiveness of the proposed apparatus and methodology. Finally, physics-of-failure analysis of tested IGBT modules is provided.

    关键词: insulated-gate bipolar transistor module,physics-of-failure,power cycling test,lifetime model,Failure mechanism,reliability

    更新于2025-09-23 15:19:57