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Multi- and single-step in-situ microwave annealing as low-thermal-budget techniques for solution-processed indium–gallium–zinc oxide thin films
摘要： In this study, low-thermal-budget in-situ microwave annealing of solution-processed indium–gallium–zinc oxide (IGZO) thin films was investigated as a potential alternative to the conventional high-thermal-budget annealing process. The low-temperature baking and high-temperature post-deposition annealing of the solution-processed IGZO film were continuously performed using the same microwave equipment, leading to a reduced heat treatment processing time and temperature. We compared the electrical characteristics of IGZO thin film transistors (TFTs) produced using single- and multi-step in-situ microwave annealing methods with those of TFTs manufactured via the conventional annealing method and found that the proposed single-step microwave annealing method yielded TFTs with electrical characteristics better than those of the TFTs fabricated using the multi-step and conventional annealing methods. In addition, the reliability was evaluated by conducting positive and negative gate bias stress tests, in which the IGZO TFTs manufactured using the proposed heat treatment method proved superior to those fabricated via the conventional heat treatment method. We investigated the effects of heat treatment on the composition and energy band structures of the IGZO films by performing X-ray photoelectron spectroscopy analysis and found that the proposed in-situ microwave annealing method is more effective than the conventional method in solution processing.
关键词： low thermal budget,indium-gallium-zinc oxide,Microwave,solution process
更新于2025-09-23 15:21:21
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Stabilization of ferroelectric Hf <sub/>x</sub> Zr <sub/>1?x</sub> O <sub/>2</sub> films using a millisecond flash lamp annealing technique
摘要： We report on the stabilization of ferroelectric HfxZr1?xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 ?C preheat step combined with millisecond flash lamp pulses, ferroelectric characteristics can be obtained which are comparable to that achieved using a 300 s 650 ?C rapid thermal anneal. X-ray diffraction, capacitance voltage, and polarization hysteresis analysis consistently point to the formation of the ferroelectric phase of HZO. A remanent polarization (Pr) of ～21 μC/cm2 and a coercive field (Ec) of ～1.1 MV/cm are achieved in 10 nm thick HZO layers. Such a technique promises a new alternative solution for low thermal budget formation of ferroelectric HZO films.
关键词： low thermal budget,ferroelectric HfxZr1?xO2 films,remanent polarization,ferroelectric phase,millisecond flash lamp annealing,coercive field
更新于2025-09-04 15:30:14