- 标题
- 摘要
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- 实验方案
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[IEEE 2019 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR) - Long Beach, CA, USA (2019.6.15-2019.6.20)] 2019 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR) - LaserNet: An Efficient Probabilistic 3D Object Detector for Autonomous Driving
摘要： Diverse models have been proposed over the past years to explain the exhibiting behavior of memristors, the fourth fundamental circuit element. The models varied in complexity ranging from a description of physical mechanisms to a more generalized mathematical modeling. Nonetheless, stochasticity, a widespread observed phenomenon, has been immensely overlooked from the modeling perspective. This inherent variability within the operation of the memristor is a vital feature for the integration of this nonlinear device into the stochastic electronics realm of study. In this paper, experimentally observed innate stochasticity is modeled in a circuit compatible format. The model proposed is generic and could be incorporated into variants of threshold-based memristor models in which apparent variations in the output hysteresis convey the switching threshold shift. Further application as a noise injection alternative paves the way for novel approaches in the fields of neuromorphic engineering circuits design. On the other hand, extra caution needs to be paid to variability intolerant digital designs based on nondeterministic memristor logic.
关键词： Memristor,threshold-based devices,neuromorphics,stochastic electronics,memristor model,stochasticity
更新于2025-09-23 15:19:57
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An electrospun polymer composite with fullerene-multiwalled carbon nanotube exohedral complexes can act as memory device
摘要： Functional polymer nanocomposites with distinctive electrical properties made of nanocarbon structures and biodegradable polymers are promising materials for the development of flexible and eco-friendly smart systems. In this work, a novel electrospun conductive polymer nanocomposite made of polycaprolactone with an exohedral complex made of multiwalled carbon nanotubes and fullerene C60 was prepared and characterized. The preparation was straightforward and the complexes self-assembled within the nanocomposite fibers. The nanocomposite showed electrical switching behavior due to charge accumulation of fullerene C60 upon electrical stimulation. Write-once read-many memory devices were fabricated by electrospinning a nanocomposite with 0.8%wt. fullerene C60 onto interdigitated coplanar electrodes. The device retained the ON state for more than 60 days and could be thermally reset, reprogrammed and erased with subsequent electrical and thermal cycling. Moreover, the electrical resistance of the device could be modulated by applying different programming voltage amplitudes and programming times, which revealed its adaptive behavior and potential application to neuromorphic systems.
关键词： Polycaprolactone,Memristor,Conductive nanocomposite
更新于2025-09-23 15:19:57
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Stability of target waves in excitable media under electromagnetic induction and radiation
摘要： Local periodic stimulus can trigger stable pulse and target wave in the excitable media, the potential mechanism is that each cell is activated by continuous driving to keep pace with the external forcing. Indeed, local diversity in excitability and heterogeneity are induced when external forcing with diversity is applied on the media. When target wave is formed and propagated, the media will be modulated, e.g. it can emit electric signal from sinoatrial node and develops target wave in the cardiac tissue, and then the heartbeat is controlled completely. In fact, the distribution of electromagnetic field in the media is changed when external electric stimulus is applied on the media; therefore, the effect of electromagnetic induction becomes important during the information encoding and signal propagation. In this paper, the Morris-Lecar model is used to describe the local kinetic of the media and an induction current is considered thus the effect of electromagnetic induction can be described. Then the artificial heterogeneity is triggered to investigate the formation and development of target waves in the excitable media with electromagnetic induction and even radiation, which is described by using Gaussian white noise. Diversity in excitability and conductance of ion channels is considered, respectively, thus different kinds of artificial heterogeneity are developed to find the stability of target waves. It is found that the target wave encounters breakup with increasing of the intensity of electromagnetic radiation.
关键词： bifurcation,electromagnetic induction,memristor,target wave,ion channel
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) - Xi'an, China (2019.6.3-2019.6.6)] 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems (PEDG) - A Short-term Photovoltaic Output Prediction Method Based on Improved PSO-RVM Algorithm
摘要： The memristor was first theorized as an electrical element, which provided the missing link between the charge and the flux. Due to the advantages of nano-scale size, multiple interconnected memristors have demonstrated unique overall characteristics, which are ideal for the utilization in neuromorphic systems. However, compared with the individual memristor circuit, a little work is explored about the overall behavior of the multiple memristive systems. In particular, the lack of a fault diagnosis approach for composite memristive network structures makes all the corresponding applications unstable and shaky. In this paper, the extraordinary properties of multiple memristor circuits are further investigated with comprehensive formula derivation and scientific computer simulations. Furthermore, a special feedback-control doublet generator is designed for implementing the fuzzy-based parametric fault diagnosis of multiple memristor circuits, which offers huge benefits in terms of accuracy and time consumption. Finally, the entire scheme is validated by an illustrative example.
关键词： Multiple memristor circuits,parametric fault diagnosis,feedback-control,doublet generator,fuzzy-based
更新于2025-09-19 17:13:59
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2D photonic memristor beyond graphene: progress and prospects
摘要： Photonic computing and neuromorphic computing are attracting tremendous interests in breaking the memory wall of traditional von Neumann architecture. Photonic memristors equipped with light sensing, data storage, and information processing capabilities are important building blocks of optical neural network. In the recent years, two-dimensional materials (2DMs) have been widely investigated for photonic memristor applications, which offer additional advantages in geometry scaling and distinct applications in terms of wide detectable spectrum range and abundant structural designs. Herein, the recent progress made toward the exploitation of 2DMs beyond graphene for photonic memristors applications are reviewed, as well as their application in photonic synapse and pattern recognition. Different materials and device structures are discussed in terms of their light tuneable memory behavior and underlying resistive switching mechanism. Following the discussion and classification on the device performances and mechanisms, the challenges facing this rapidly progressing research field are discussed, and routes to realize commercially viable 2DMs photonic memristors are proposed.
关键词： neuromorphic computing,photonic synapse,photonic memristor
更新于2025-09-19 17:13:59
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A novel optical fiber Macha??Zehnder interferometer based on the calcium alginate hydrogel film for humidity sensing
摘要： Diverse models have been proposed over the past years to explain the exhibiting behavior of memristors, the fourth fundamental circuit element. The models varied in complexity ranging from a description of physical mechanisms to a more generalized mathematical modeling. Nonetheless, stochasticity, a widespread observed phenomenon, has been immensely overlooked from the modeling perspective. This inherent variability within the operation of the memristor is a vital feature for the integration of this nonlinear device into the stochastic electronics realm of study. In this paper, experimentally observed innate stochasticity is modeled in a circuit compatible format. The model proposed is generic and could be incorporated into variants of threshold-based memristor models in which apparent variations in the output hysteresis convey the switching threshold shift. Further application as a noise injection alternative paves the way for novel approaches in the fields of neuromorphic engineering circuits design. On the other hand, extra caution needs to be paid to variability intolerant digital designs based on nondeterministic memristor logic.
关键词： neuromorphics,threshold-based devices,Memristor,stochasticity,memristor model,stochastic electronics
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) - Noordwijk, Netherlands (2019.10.2-2019.10.4)] 2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT) - Fault Tolerant Photovoltaic Array: A Repair Circuit Based on Memristor Sensing
摘要： Solar energy is one of the most important sources of renewable energy. Photovoltaic arrays are a widely employed systems used to harvest solar energy. In such systems, the presence of faulty cells negatively affect the energy production of the entire array. The design of fault tolerant solar arrays is therefore attracting a growing interest. In this work, we propose a hardware implementation of a fault-recovery algorithm for solar cell arrays. The proposed system detects cells with degraded performance using a memristor as sensing device. With the aim of improving energy production ef?ciency, the connections among solar cells are recon?gured according to the array health status. The designed system automatically activates spare cells in the segments of the array to eventually increase energy production. The proposed solution can be adapted to arrays of any size and be applied to different types of solar cells. We show through simulations that the solution here proposed signi?cantly increases the energy production in presence of faults.
关键词： Photovoltaic arrays,fault tolerance,renewable energy,solar energy,memristor sensing
更新于2025-09-16 10:30:52
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Facile Preparation of Molybdenum Disulfide Quantum Dots Using a Femtosecond Laser
摘要： Molybdenum disulfide (MoS2) is rapidly emerging in a wide range of applications owing to its superior optical, electrical, and catalytic properties. In particular, aside from the current great interest in monolayer MoS2, MoS2 quantum dots (QDs) have received much attention in the electronics and optoelectronics fields owing to their inherent electrical and optical properties arising from the quantum confinement effect. Thus, various methods for producing MoS2 QDs, such as exfoliation, substrate growth, and colloidal synthesis, have been attempted. In this study, the method for manufacturing MoS2 QD with a size of 10 nm which is simpler than the conventional method was devised. On the basis of characterization of the prepared MoS2 QD samples, resistive switching devices was fabricated. These devices demonstrated stable unipolar resistive switching behavior without an electroforming process. This study provides a new approach for the mass production of MoS2 QD and one of their potential applications.
关键词： exfoliation,memristor,MoS2,quantum confinement effect,phase transition
更新于2025-09-16 10:30:52
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Laser formation of thin-film memristor structures based on vanadium dioxide
摘要： The thin films of VO2 and the metal-oxide-metal (MOM)-structures of Au/VO2/VO2-x/Au based on them, which are promising for the use in neuromorphic electronic devices, have been obtained by the method of pulsed laser drop-free deposition on the c-sapphire substrates at room temperature. Using the cyclic I-V characteristics, a memristive effect has been revealed in the vertical geometry of the Au/VO2/VO2-x/Au MOM-structures. The x value was varied in the course of their growth by changing the pressure of buffer oxygen from 0.1 to 40 mTorr in the vacuum chamber, which provided the needed conductivity in the depleted injection layer. The dependence of memristive properties on the thickness of the semiconductor layer and concentration of the oxygen vacancies has been established. The oxygen pressure in the PLD method has been determined, at which the volatile behavior of the memristor resistive switching starts to appear at an oxide region thickness of 10/30 nm.
关键词： memristor,VO2,pulsed laser deposition,neuromorphic electronic devices,resistive switching
更新于2025-09-12 10:27:22
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Electric field-controlled crossover effect in oxygen-deficient titanium-oxide memory bits
摘要： In this letter, we report an unusual crossover in the current-voltage characteristics of forming-free titanium oxide-based memory bits. The voltage at which crossover between high and low resistance states take place, Vcr gradually shifts to lower bias values with either decreasing sweeping rates, increasing maximum scan voltage or increasing current compliance. Interestingly, the crossover effect is not pronounced for reduced-oxide based memory bits. The mechanism behind these changes in the I-V curves is discussed.
关键词： D. Crossover,D. Memristor,A. Metal oxide
更新于2025-09-12 10:27:22