研究目的
To obtain thin VO2 films and Au/VO2/VO2-x/Au MOM-structures by pulsed laser deposition at room temperature, and to study their memristive properties for use in neuromorphic electronic devices.
研究成果
The study successfully produced thin VO2 films and Au/VO2/VO2-x/Au MOM-structures with memristive properties suitable for neuromorphic electronic devices. The memristive effect was demonstrated, and the dependence on the thickness of the semiconductor layer and oxygen vacancy concentration was established. The volatile behavior of resistive switching was observed at specific oxygen pressures and layer thicknesses.
研究不足
The films deposited at room temperature were amorphous, which may affect the memristive properties. The study is limited to the specific conditions of pulsed laser deposition and the materials used.
1：Experimental Design and Method Selection:
Pulsed laser deposition in a drop-free mode was used to produce thin VO2 films and MOM-structures on c-sapphire substrates at room temperature. The oxygen pressure was varied to control the x value in VO2-x.
2：Sample Selection and Data Sources:
Vanadium metal targets with a purity of 99.9% were ablated using a KrF excimer laser. The oxygen pressure during film growth was varied from 0.1 to 40 mTorr.
3：9% were ablated using a KrF excimer laser. The oxygen pressure during film growth was varied from 1 to 40 mTorr.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: KrF excimer laser (248 nm), vanadium metal targets, c-sapphire substrates, gold for electrodes.
4：Experimental Procedures and Operational Workflow:
Films were deposited at room temperature. The structural properties were analyzed by X-ray diffraction, and the electrical properties were measured using cyclic I-V characteristics.
5：Data Analysis Methods:
X-ray diffraction patterns were analyzed to determine the crystal structure. I-V characteristics were measured to study the memristive properties.
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