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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • electron-transparent membranes
  • micropump
  • field emission electron source
  • ion source
  • ion mobility spectrometry
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Wroclaw University of Science and Technology
209 条数据
?? 中文（中国） ▾

  • [Springer Theses] Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors || Introduction

    摘要： As the miniaturization and integration of solid-state electronic devices has continued to increase rapidly with the demands of high speed, low power consumption and high storage density, the conventional Si-based technology has lost their advantages on fabrication process. Therefore the technologies based on new materials gradually attract researchers’ attention. Among them, Indium Arsenide (InAs) nanowires (NWs) with high electron mobility is one of the most promising candidate. In this chapter, we introduce the advantages of InAs nanowire on electronic devices and the development status of InAs nanowire electronic devices. Also, the topic ideas and chapter arrangements of this thesis are presented.

    关键词： solid-state,high electron mobility,electronic devices,InAs nanowires,miniaturization

    更新于2025-09-23 15:21:21

  • Highly transparent zinc nitride thin films by RF magnetron sputtering with enhanced optoelectronic behavior

    摘要： Transparent semiconducting nitrides are important materials for many modern technologies. Here, optical transparent semiconducting zinc nitride (Zn3N2) thin films have been developed by reactive RF magnetron sputtering at different nitrogen (N2) contents. The deposited films are found to be cubic with preferred orientation of (3 2 1) plane. High optical transmittance (～96%) and refractive index (1.32) at the wavelength of 500 nm and optical band gap of 3.1 eV have been observed for the films deposited at 45% nitrogen content. The investigation on other optical constants such as extinction coefficient and dielectric constant as a function of wavelength shows enhanced optical behavior. The Zn3N2 thin films show n-type conductivity with carrier concentration of ～1020–1021 cm?3, mobility in the range of 4 to 56 cm2/Vs (which is 1–2 times higher than the values of TCOs) and resistivity around 10?4 Ωcm as a function of nitrogen content. These results suggested that Zn3N2 thin films could perform as potential transparent semiconductors for thin film solar cells.

    关键词： Electron mobility,Zinc nitride,Optical constants,Transparent semiconductor,Reactive RF sputtering

    更新于2025-09-23 15:21:21

  • Analysis and design of a multi-channel constant current LED driver based on DC current bus distributed power system structure

    摘要： In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (VF), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of ～1 nA/mm and an ION/IOFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (～1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the dif?cult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I–V characterization, and a more ALE-dependent dynamic ON-resistance is observed.

    关键词： atomic layer etching (ALE),200-mm,leakage,metal–insulator–semiconductor high-electron mobility transistor (MISHEMT),GET-SBD,diode,AlGaN/GaN

    更新于2025-09-23 15:21:01

  • Tweaking the physics of interfaces between monolayers of buckled cadmium sulfide for a superhigh piezoelectricity, excitonic solar cell efficiency and thermoelectricity

    摘要： Interfaces of heterostructures are routinely studied for different applications. Interestingly, monolayers of the same material when interfaced in an unconventional manner can bring about novel properties. For instance, CdS monolayers, stacked in a particular order, are found to show unprecedented potential in the conversion of nanomechanical energy, solar energy and waste heat into electricity, which has been systematically investigated in this work, using DFT based approaches. Moreover, stable ultrathin structures showing strong capabilities for all kinds of energy conversion are scarce. The emergence of a very high out-of-plane piezoelectricity, |d33| ~ 56 pm/V, induced by the inversion symmetry broken in the buckled structure helps to supersede the previously reported bulk wurzite GaN, AlN and Janus multilayer structures of Mo and W based dichalcogenides. The piezoelectric coefficients have been found to be largely dependent on the relative stacking between the two layers. CdS bilayer is a direct band gap semiconductor with its band edges straddling the water redox potential, thereby making it thermodynamically favorable for photocatalytic applications. Strain engineering facilitates its transition from type-I to type-II semiconductor in CdS bilayer stacked over monolayer boron phosphide, and the theoretically calculated power conversion efficiency (PCE) in the 2D excitonic solar cell exceeds 27% for a fill factor of 0.8, which is much higher than that in ZnO/CdS/CuInGaSe solar cell (20% efficiency). Thermoelectric properties have been investigated using semi classical Boltzmann transport equations for electrons and phonons within the constant relaxation time approximation coupled to deformation potential theory, which reveal ultralow thermal conductivity (~ 0.78 Wm-1K-1) at room temperature due to the presence of heavy element Cd, strong anharmonicity (high mode Gruneisen parameter at long wavelength, phonon lifetime < 5 ps), low phonon group velocity (4 km/s) and low Debye temperature (260 K). Such a low thermal conductivity is lower than that of dumbbell silicene (2.86 Wm-1K-1), SnS2 (6.41 Wm-1K-1) and SnSe2 (3.82 Wm-1K-1), SnP3 (4.97 Wm-1K-1). CdS bilayer shows a thermoelectric figure of merit (ZT) ~ 0.8 for p-type and ~ 0.7 for n-type doping at room temperature. Its ultrahigh carrier mobility (μe ~2270 cm2V-1s-1) is higher than that of single layer MoS2 and comparable to that in InSe. The versatile properties of CdS bilayer together with its all-round stability supported by ab initio molecular dynamics simulation, phonon dispersion and satisfaction of Born-Huang stability criteria highlight its outstanding potential for applications in device fabrication and applications in next generation nanoelectronics and energy harvesting.

    关键词： Power conversion efficiency,Excitonic solar cell,Piezoelectricity,Photocatalysis,Solar energy,Semiconductor,Thermoelectricity,Carrier mobility

    更新于2025-09-23 15:21:01

  • Non-fullerene small molecule acceptors with three-dimensional thiophene/selenophene-annulated perylene diimides for efficient organic solar cells

    摘要： Three-dimensional non-fullerene acceptors with a spiro core linked with S/Se fused perylene diimides possess appropriate energy levels, twisted molecular configuration and high carrier mobility, leading to a power conversion efficiency of 6.95% for the organic solar cells.

    关键词： perylene diimides,organic solar cells,carrier mobility,non-fullerene acceptors,spiro core

    更新于2025-09-23 15:21:01

  • Transition metal nanohybrid as efficient and stable counter electrode for heterostructure quantum dot sensitized solar cells: A trial

    摘要： Counter electrodes are critical components of third generation solar cells. A simple strategy of utilizing iso-structural analogue of graphene, namely 2D molybdenum di-sulphide as nanohybrid with CuS as counter electrode is explored in this work. Formation of heterostructure photoanode with CdSe/CdS quantum dots along with nano-hybrid counter electrode has significantly boosted current density and open circuit voltage. The designed heterostructure and the counter electrode performs exceptionally well with good stability due to synergistic effect, thus spiking new hopes in achieving high efficiency in quantum dot solar cells.

    关键词： Hall effect,CuS-MoS2 nanohybrid,CdSe/CdS heterostructures,Mobility

    更新于2025-09-23 15:21:01

  • Significantly enhanced electron transport of nonfullerene acceptor in blend film with high hole mobility polymer of high molecular weight: thick-film nonfullerene polymer solar cells showing high fill factor

    摘要： Overcoming fill factor (FF) decay in thick fullerene active layers has been demonstrated with high hole mobility (μh) polymers. However, this issue remains as a challenge for thick active layers with nonfullerene acceptors. Here we demonstrate high FF and highly efficient nonfullerene based thick active layer with high μh polymer as the donor. Its relatively balanced hole and electron transports with a μh/μe ratio of 4.42 in 320 nm thick blend film are realized by the high molecular weight polymer induced higher electron mobility (μe approaching 1×10?3 cm2/(V s)) for the blend film. Relative to the pristine IEICO-4F nonfullerene film, 8 times increased μe for the blend film corresponds to closer interdigitation of IEICO-4F lamella and higher order face-on orientation of in-plain (200) peak of IEICO-4F molecules, which are very helpful for electron transport. As a result, solar cells with 320 nm thick binary nonfullerene active layers show outstanding FF over 70% and power conversion efficiency of 13.2%, a breakthrough for a high μh polymer as the donor. Our results suggest that high μh polymer donors are promising candidates for nonfullerene based polymer solar cells.

    关键词： nonfullerene acceptor,thick-film polymer solar cells,fill factor,electron transport,high hole mobility polymer

    更新于2025-09-23 15:21:01

  • A 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) transport layer with high electron mobility for thick organic light-emitting diodes

    摘要： In our previous paper [T. Matsushima et al., Nature 572, 502 (2019)], current densities of organic light-emitting diodes (OLEDs) did not decrease significantly when the thicknesses of a 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) transport layer were increased from tens of nanometers to 1 μm. To make this mechanism clear, we carried out several experiments in terms of electron transfer with other organic layers and electron mobility of HAT-CN. Finally, we found that the vacuum-evaporated HAT-CN layers have very high electron mobility and, therefore, using a HAT-CN transport layer can suppress the decrease in current density even in thick OLEDs. The electron mobility of vacuum-deposited HAT-CN layers, which was measured using analysis with a space-charge-limited current model, was 0.1–1 cm2 V?1 s?1. This electron mobility is much higher than those of conventional organic transport layers used in OLEDs (<10?3 cm2 V?1 s?1) even though the HAT-CN layers are amorphous-like. We attributed one of the reasons for this extraordinarily high mobility to be a better overlap of π orbitals in the substrate normal, which is associated with horizontally oriented HAT-CN molecules on a substrate.

    关键词： transport layer,thick organic light-emitting diodes,HAT-CN,OLEDs,electron mobility

    更新于2025-09-23 15:21:01

  • Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide

    摘要： In this study, we present the feasibility to fabricate back-gated graphene field-effect transistors (GFETs) on 10 nm thermal SiO2 substrate. Here, we compare the mobility of graphene devices at different locations of the transferred CVD graphene. We observed that there is a n-type doping of the graphene devices with Dirac points within ± 0.5 V from an ideal value of 0 V. The downscaling of the back-gate dielectric thickness reduces the operating voltage range, commonly required for low power electronics, and the devices are stable during operation in air under ambient conditions. The extracted contact resistance is comparable to the earlier reports found in literature and this provides a feasibility to fabricate low power futuristic graphene based nanoelectronics.

    关键词： CVD graphene,n-type doping,thermal SiO2,mobility,Dirac points,low power electronics,field-effect transistors,graphene,contact resistance

    更新于2025-09-23 15:21:01

  • Potential and limitations of CsBi3I10 as photovoltaic material

    摘要： Herein we demonstrate the dry synthesis of CsBi3I10 both as free-standing material as well as in the form of homogeneous thin films, deposited by thermal vacuum deposition. Chemical and optical characterization shows high thermal stability, phase purity, and photoluminescence centered at 700 nm, corresponding to a bandgap of 1.77 eV. These characteristics make CsBi3I10 a promising low-toxicity material for wide bandgap photovoltaics. Nevertheless, the performance of this material as a semiconductor in solar cells remains rather limited, which can be at least partially ascribed to a low charge carrier mobility, as determined from pulsed-radiolysis, time-resolved microwave conductivity. Further developments should focus on understanding and overcoming the current limitations in charge mobility, possibly by compositional tuning through doping and/or alloying, as well as optimizing thin film morphology which may be another limiting factor.

    关键词： photovoltaic material,thermal vacuum deposition,CsBi3I10,dry synthesis,charge carrier mobility

    更新于2025-09-23 15:21:01