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Pyrene-SH functionalized OTFT for detection of Hg2+ ions in aquatic environments
摘要： Mercury ion (Hg2+) sensor based on bottom gate top contact organic thin film transistor (OTFT) was fabricated. The OTFT channel area was functionalized with pyrene that contain thiol group, which has strong binding affinity toward Hg2+ ion. The OTFT sensor exhibited a charge mobility of 0.28 cm2 V–1 s–1, a threshold voltage of -22.3 V and on-to-off ratio 103. The sensor shows high selectivity to Hg2+ ion over other two valence metal ions. OTFT sensor exhibited high sensitivity to Hg2+ ion, indicated by increasing of drain current after exposed to different concentration of Hg2+ ion ranging from 1 mM to 0.01 μM. Moreover, the OTFT sensor capability for practical application was also demonstrated by sensing the present of 25 μM of Hg2+ ion in tap, drinking and seawater samples.
关键词： Mercury sensor,Pyrene derivative,Organic thin film transistor
更新于2025-11-14 17:28:48
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Hybrid bilayer gate dielectric-based organic thin film transistors
摘要： Organic thin film transistors (OTFTs) are key building blocks for flexible, low cost electronics systems. They provide a viable alternative for silicon-based electronics with added advantages of low cost and flexibility. However, few issues like high-operating voltage, low-switching speed, high-leakage current and reliability are still a challenge. The overall performance of an OTFT depends on organic semiconductors and gate dielectric interface. In this paper, we review the current status and trends in the choice of dielectric layer for OTFTs. As a starting point, the performance parameters of an OTFT and their dependence on the dielectric layer are briefly discussed. A variety of dielectric materials which includes high-k inorganic, organic, surface coated inorganics and nanocomposites are also presented. The advantages and drawbacks of each of these materials are discussed in detail. We reviewed the latest developments in the dielectric materials especially, self-assembled monolayers (SAMs), hybrid bilayers and nanocomposites. SAM-based OTFTs offer several advantages but shift in the threshold voltage remains a concern. Nanocomposites are a latest addition to the dielectric materials, which offer advantages like solution processing and improved dielectric constant but have a rough surface. A hybrid bilayer that incorporates the inorganic dielectric as a base layer and a thin polymer layer over it to improve the surface properties offers several desirable characteristics over the other choices. Hence, we propose that hybrid bilayer gate dielectrics shall play a pivotal role in improving the OTFT performance.
关键词： low-k organic,high-k inorganic,Organic thin film transistor,self-assembled monolayer,gate dielectric,hybrid bilayer
更新于2025-09-23 15:23:52
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Critical impact of gate dielectric interfaces on the trap states and cumulative charge of high-performance organic thin field transistors
摘要： In the operation of OFETs, the electrical properties are strongly dependent on the merits of the constituting layers and the formed interfaces. Here we study the trap states variations at the interface between the organic semiconductor pentacene and polymer insulators. With ZrO2 dielectric modified by polymers and find a 10 × decrease in the density of trap states at the semiconductor/insulator interface, bring about the charge carrier mobility increase from 0.058 cm2/Vs to 0.335 cm2/Vs. In addition, when compare to the thicker films at the same applied gate voltage, the thinner film would lead to enhanced coupling capability and more charges cumulative cumulated at the channel region, which is pivotal for optimizing the performance of OFETs. The results prove that the property of the insulator layer could impact largely on the device performance.
关键词： Organic thin film transistor,Cumulative charge,Insulator/semiconductor interface,Trap states
更新于2025-09-23 15:23:52
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Transport models in disordered organic semiconductors and their application to the simulation of thin-film transistors
摘要： Relevant organic thin-film transistor (OTFT) simulation software must account for the main specificities of organic semiconductors (OSC) in term of free carriers’ density of states, transport mechanisms, and injection/collection properties from/to the device contacts. Among the parameters impacting the OTFT performance the carrier mobility is a key parameter. Usual methods to extract the mobility from current-voltage (I-V) measurements lead to obtained only an apparent, or effective, mobility. The value of the apparent mobility is different of the intrinsic channel organic semiconductor mobility. Despite this effective mobility actually determines most of a given device performance, therefore providing a very useful technology benchmark, it does not describe the intrinsic organic semiconductor material transport properties, and may even be misleading in the route to improve the OTFT fabrication process. To obtain a better understanding of the transport properties in OSCs using OTFT electrical characterization, implementing an appropriate physical mobility model in an OTFT I-V simulation software is a good way. The present paper gives a review of the carrier mobility models which can be implemented in OTFT simulation software. The review is restricted to the analytical and semi-analytical physical models taking into account the temperature, the carrier concentration and the electric field dependence of the carrier mobility in disordered OSCs.
关键词： mobility,transport,modeling,organic semiconductors,Organic thin-film transistor (OTFT)
更新于2025-09-23 15:22:29
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - Flexible Printed Organic Thin-Film Transistor Devices and Integrated Circuit Applications
摘要： The latest developments in flexible and printed electronics technology based on organic thin-film transistor (OTFT) devices as well as printable electronic materials are briefly reported on in this paper. The successful fabrication and operation of printed OTFT devices and a variety of integrated circuit applications such as flip-flop logic gates and operational amplifiers will be demonstrated.
关键词： Organic electronics,Flexible electronics,Organic thin-film transistor,Printed electronics
更新于2025-09-23 15:22:29
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All organics thin film flexible photodetector based on C<sub>60</sub> modified PEDOT:PSS
摘要： In organic electronics, the use of self-assembled monolayer dielectric functional groups is considered an effective surface modification strategy that can significantly improve device performance. A flexible polymer (PEDOT:PSS) photodetector on the substrate polyimide (PI) with broadband response (450 nm~980 nm) and high response (0.56 A/W) is reported, which is superimposed on the surface by small molecule (C60) thermal evaporation. In addition, the planeness of organic semiconductor and the overall performance of organic thin film photodetector can be improved significantly by using small molecule modified polymer thin film, the response of small molecule modified organic device is improved by an order of magnitude, which provides a guarantee for better application of organic thin films in circuits. Moreover, the device has strong flexibility stability performance, which can meet the requirements of flexible stability of future photoelectric devices.
关键词： organic thin film,high responsivity,broadband response,Photodetector,flexibility
更新于2025-09-23 15:21:01
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Narrow bandgap difluorobenzochalcogenadiazole-based polymers for high-performance organic thin-film transistors and polymer solar cells
摘要： A bithiophene donor unit, 3-alkoxy-3’-alkyl-bithiophene (TRTOR), was copolymerized with difluorobenzochalcogenadiazole (ffBZ) containing different heteroatoms on their diazole structure to afford a series of PffBZ copolymers (where Z = X, T, Se) with narrow optical bandgaps in the range of 1.34-1.47 eV. The effects of ffBZ heteroatoms (O, S, and Se) on the optical properties, electrochemical characteristics and film morphologies of polymers as well as device performance were fully investigated. The results revealed that the highest occupied molecular orbitals (HOMOs) of polymers are gradually elevated accompanied by increased material solubility in common organic solvents as the size of heteroatoms increases. The PffBZ copolymers exhibit substantial hole mobility of 0.08-1.6 cm2 V-1 s-1 in organic thin-film transistors (OTFTs). The PffBX, PffBT, and PffBSe-based polymers exhibit maximum power conversion efficiencies (PCEs) of 5.47%, 10.12%, and 3.65%, respectively in polymer solar cells (PSCs). For PffBZ copolymers, the alkyl chain exerts a great influence on the morphology of the polymer:PC71BM blend films and hence affect PCEs in PSCs. It was found that the performing of polymers branching on the 2nd position for alkyl chain and the 3rd position for alkoxy chain were the best among PffBT and PffBSe-based polymers, and it is different from the tetrathiophene-based benchmark polymer branching on the 2nd position of the alkyl chain. X-ray diffraction revealed that all PffBZ-based polymers has obvious a face-on dominated orientation, and that chalcogen atom and branched position on alkoxy chain have a great influence on the morphologies of neat and blend films. The above results indicated that the branching positions and chalcogen atoms should be carefully optimized to maximize performance.
关键词： polymer solar cells,high-performance,difluorobenzochalcogenadiazole,organic thin-film transistors,narrow bandgap
更新于2025-09-23 15:19:57
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High performance n-type vertical organic phototransistors
摘要： In this manuscript, a solution-processed n-type organic phototransistor based on vertical structure thin-film transistors was proposed. Due to the vertical structure and short channel length (≈130 nm), the transistors exhibited excellent current density (15.4 mA/cm2) with high Ion/Ioff ratio (up to 105). On account of this structure, the face-on π-π stacking of P(NDI2OD-T2) was aligned with the charge transport direction, which facilitated charge transfer from source to drain electrode. Moreover, n-type organic phototransistors based on vertical thin-film transistors were demonstrated for the first time, in which the active layer was protected by the source-drain electrodes, resulting in the improvement of the stability of the device. Due to the nanoscale channel, efficient separation of electron-hole pairs and quick charge transfer can be achieved. Hence, high-performance n-type phototransistor was obtained with responsivity of 34.8 A/W, photosensitivity of 4.78×104, detectivity of 3.95×1013 Jones and external quantum efficiency up to 1.1×104 % under 400 nm illumination with a light intensity of 200 μW cm-2, which was much better than those reported n-type organic phototransistors. This work provided a strategy for the fabrication of high performance n-type organic phototransistor, which paved the way for its future application in the next-generation organic optoelectronics.
关键词： n-type organic semiconductor,Organic phototransistors,Vertical structure,Organic thin-film transistors
更新于2025-09-19 17:15:36
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Biodegradable Materials for Organic Field-effect Transistors on a Paper Substrate
摘要： Paper-based pentacene organic thin-film transistors (OTFTs) with spin-coated gelatin (G) stacked gate dielectric layers, the Au/pentacene/G/G matrix-embedded iron (FeG)/Al/paper structure, were fabricated. The proposed composite-stacked bio-dielectric layer can be implemented using solutions with the degradable biomaterials. These materials enable a large-area printing of use-and-throw devices. Control devices (Au/pentacene/G/Al and Au/pentacene/FeG/Al structure) were also fabricated for comparison. High performance paper-based OTFT constructed from the stacked gate dielectric layer exhibited a carrier mobility of 8 cm2/Vs, on/off current ratio of approximately 103, subthreshold swing of 0.6 V/dec, and threshold voltage of ?1.4 V. These results are compatible to those OTFTs fabricated on other substrates. Therefore, the emerging biomaterial-based transistors on paper substrates may help in developing low-cost, environment-friendly devices.
关键词： paper,pentacene,gelatin,organic thin-film transistor (OTFT),solution process
更新于2025-09-19 17:15:36
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Facile synthesis of a semiconducting bithiophene-azine polymer and its application for organic thin film transistors and organic photovoltaics
摘要： A new azine polymer poly(4,40-didodecyl-2,20-bithiophene-azine) (PDDBTA) was synthesized in only three steps. PDDBTA showed hole mobilities of up to 4.1 (cid:2) 10(cid:3)2 cm2 V(cid:3)1 s(cid:3)1 in organic thin ?lm transistors (OTFTs) as a p-channel material. As a donor in organic photovoltaics (OPVs), power conversion e?ciencies (PCEs) of up to 2.18% were achieved, which is the ?rst example of using an azine-based polymer for OPVs. These preliminary results demonstrate the potential of bithiophene-azine polymers as a new type of low-cost semiconductor material for OPVs and other organic electronics.
关键词： azine polymer,semiconductor material,organic photovoltaics,organic thin film transistors
更新于2025-09-19 17:13:59