- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Stimuli responsive diffraction gratings in soft-composite materials
摘要： Diffraction gratings (DGs) are unique optical components with the capability to control and address a travelling light wave because of their micro/nanoscale periodicity. Nowadays, DGs are used in several sophisticated and high-tech applications such as spectrometers, memories, as well as in bioengineering and telecommunications. Advanced micro and nano fabrication processes enable the realization of DGs with excellent morphological and optical properties. However, realizing DGs with on-demand optical parameters is still a challenge because of the absence of reliable and cost-effective smart materials. Herein, we discuss the unique and compelling opportunities obtained by bridging materials with intrinsic flexibility (soft polymers) and re-configurability (liquid crystals (LCs)), as well as emerging fabrication procedures. Further, we present several stimuli responsive DGs used in various research fields such as sensing, biotechnology and solar energy. Lastly, in the light of flexible and reconfigurable DGs applications, we report different examples of light responsive and electro-activated, LCs based, DGs.
关键词： photolithography,liquid crystals,diffraction gratings,optics
更新于2025-09-23 15:23:52
-
Angular and Spectral Bandwidth of Extreme UV Multilayers Near Spacer Material Absorption Edges
摘要： High resolution imaging systems for EUV range are based on multilayer optics. Current generation of EUV lithography uses broadband Sn LPP sources, which requires broadband mirrors to fully utilize the source power. On the other hand, there always remains a possibility to use FEL or synchrotron as EUV source. FEL can produce very bright narrowband EUV light of a tunable wavelength, and the spectral bandwidth of the mirror is no longer a restriction. In this paper we look at the consequences of switching to different wavelengths if FEL source is used. For instance, it is known that the reflectance of Mo/Si multilayers increases when approaching Si L-edge, and the spectral bandwidth drops. But the behavior of an angular bandwidth (and its relation with the spectral bandwidth) is usually left out. It is also sometimes assumed that these bandwidths are correlated. For a large aperture EUV optical system with diffraction-limited resolution angular acceptance of a mirror is also a very important parameter. We show that the angular bandwidth of several multilayer systems (Mo/Si, Mo/Be, Ru/Si, Ru/B, La/B) actually increases close to spacer absorption edges, opposite to what occurs with the spectral bandwidth. We study this effect and show that it is caused by an interplay of changing optical constants of respective materials used in these multilayer combinations. We also provide an experimental check of the angular bandwidth of Mo/Si multilayers at 13.5 and 12.6 nm, which confirms our calculations.
关键词： Multilayer,Free Electron Laser,EUV Photolithography
更新于2025-09-23 15:22:29
-
Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers
摘要： A new technique is reported for selective growth of polycrystalline diamond by hot filament chemical vapor deposition (HFCVD) on AlGaN/GaN-on-Si (111) wafers without degradation of the underlying layers. Selective diamond seeding is accomplished by dispersing nano-diamond seeds in photoresist and patterned lithographically prior to HFCVD growth. A thin layer of plasma enhanced CVD SiNx, deposited prior to seeding and diamond deposition, was found to be essential to protect the AlGaN/GaN wafer. Methane concentration of 3.0% was used to achieve increased diamond growth rate and faster surface coverage. Excellent selectivity and minimal AlGaN surface damage were achieved due to the protective layer and faster surface coverage with increased methane concentration. Damage mitigation was confirmed by comparison of atomic force microscopy, x-ray diffraction, and Raman spectroscopy, each conducted before and after diamond deposition, and by SEM images of the final structures.
关键词： 2DEG,Reciprocal space mapping,III-Nitride,SiNx,Selective area deposition,CVD diamond,Photolithography,GaN decomposition
更新于2025-09-23 15:22:29
-
Chemical use in the semiconductor manufacturing industry
摘要： Background: The semiconductor industry is known to use a number of chemicals, but little is known about the exact chemicals used due to the ingredients being kept as a trade secret. Objectives: The objective of this study was to analyze chemical use using a safety data sheet (SDS) and chemical inventory provided by a major semiconductor company, which operated two factories (A and B). Methods: Descriptive statistics were obtained on the number of chemical products and ingredients, photoresists, and carcinogens, classified by the International Agency for Research on Cancer (IARC), as well as trade secret ingredients. The total chemical use per year was estimated from chemical inventories mass (kg). Results: A total of 428 and 432 chemical products were used in factories A and B, respectively. The number of pure chemical ingredients, after removing both trade secret ingredients and multiple counting, was 189 and 157 in factories A and B, respectively. The number of products containing carcinogens, such as sulfuric acid, catechol, and naphthalene was 47/428 (A) and 28/432 (B). Chemicals used in photolithography were 21% (A) and 26% (B) of all chemical products, and more than 97% among them were chemicals containing trade secret ingredients. Conclusions: Each year, 4.3 and 8.3 tons of chemicals were used per person in factories A and B, respectively. Because of the high level of commercial secrecy and the use of many unregulated chemicals, more sustainable policies and methods should be implemented to address health and safety issues in the semiconductor industry.
关键词： SDS,trade secret ingredients,chemical,Semiconductor,photolithography
更新于2025-09-23 15:21:21
-
Fabrication and Characterization of Ni-Doped ZnO Nanorod Arrays for UV Photodetector Application
摘要： In this work, the structure morphologies, lattices, and optical properties of zinc oxide (ZnO) nanorods (NRs) with various amounts of nickel (Ni) dopants were investigated and explored. The 100 nm ZnO seed layer was grown on the Corning glass substrate by the radio frequency (RF) magnetron sputtering technique, and the chemical bath deposition (CBD) method was used to grow NR arrays. It was found that the Ni concentration of the sample is 1.06 at% by EDX spectra examination. All the NRs exhibited a hexagonal wurtzite structure and preferentially grew along the c-axis on the substrate. Additionally, the ultraviolet (UV) photodetectors (PDs) with Ni-doped ZnO (NZO) NRs based on metal-semiconductor-metal (MSM) structure were fabricated through a photolithography process. Then, such a sample was annealed at 500 °C to obtain good performance and reduced oxygen vacancy (～560 nm). The results showed that the NZO NRs were with an excellent photosensitivity for UV PD applications and a faster rise/decay time than pure ZnO. Furthermore, with a 3 V applied bias and 380 nm UV illumination, the sensitivities of the fabricated ZnO PDs with different Ni contents (0, 4, and 8 mM) were 71.45, 393.04, and 238.75, respectively.
关键词： nanorod arrays,photolithography process,chemical bath deposition,UV photodetector,Ni-doped ZnO
更新于2025-09-23 15:19:57
-
Grayscale Nanopixel Printing at Sub-10-nanometer Vertical Resolution <i>via</i> Light-Controlled Nanocapillarity
摘要： Nanotextures play increasingly important roles in nanotechnology. Recent studies revealed that their functionalities can be further enhanced by spatially modulating the height of their nanoscale pixels. Realizing the concept, however, is very challenging as it requires “grayscale” printing of the nanopixels in which their height is controlled within a few nanometers as a micrometric function of position. This work demonstrates such a high vertical and lateral resolution grayscale printing of polymeric nanopixels. We realize the height modulation by exploiting the discovery that the capillary rise of certain photopolymers can be optically controlled to stop at a predetermined height with sub-10-nm accuracy. Microscale spatial patterning of the control light directly extends the height modulation into a two-dimensionally patterned, grayscale nanopixel printing. Its utility is veri?ed through readily recon?gurable, maskless printing of grayscale nanopixel arrays in dielectric and metallo-dielectric forms. This work also reveals the highly nonlinear and unstable nature of the polymeric nanocapillary e?ect, expanding its understanding and application scope.
关键词： gap plasmonics,digital micromirror device,nanocapillarity,opto?uidics,nanofabrication,maskless photolithography
更新于2025-09-23 15:19:57
-
[IEEE 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Sao Paulo, Brazil (2019.8.26-2019.8.30)] 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) - Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
摘要： A submonolayer quantum dot infrared photodetector (SML-QDIP) was grown on a GaAs(001) substrate by molecular beam epitaxy and processed using conventional optical lithography, wet etching and electron-beam metallization. Additionally, a side of the device was polished at 45 degrees in order to allow optical measurements with s- and p- polarized light. The electro-optical properties of the device were investigated both in normal incidence and at 45 degrees in order to study the quantum confinement of the SML-QD along the lateral and vertical directions. The s-to-p photocurrent ratio was found to be between 0.10 and 0.43, showing that, in this new type of quantum dot, the lateral confinement is still weaker than along the vertical direction, but is better than the one of conventional QDs fabricated in the Stranski-Krastanov growth mode. The maximum specific detectivity in normal incidence was 1.3×1011 cm Hz1/2/W at 30 K and 0.9V.
关键词： quantum dot,GaAs,molecular beam epitaxy,infrared detector,photolithography,submonolayer
更新于2025-09-16 10:30:52
-
[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Laser Beam Homogenization Technology and its Application in High Speed Photography
摘要： We proposed a method of laser beam homogenization based on different optical components. Applications in various experiments the homogenization system significantly reduces the focal spot non-uniformity in high-speed photolithography. By virtue of the advantages such as high efficiency, high brightness and high reliability, laser is widely applied in various applications. The homogenization system of the laser beam normally presents non-uniformity in high speed photolithography. Therefore, in order to achieve uniform flat-top beam distribution, the laser beam homogenization technology emerges. In this component, we used different optical to homogenize laser beam, Conducted experiments and verified the feasibility of the method. The experiments were performed on SII light speed device. We used framing camera to photograph the process of the laser beam homogenization and processed the image with non-uniformity reduction algorithm. The results show that the homogenization system significantly reduces the focal spot non-uniformity in high-speed photolithography.
关键词： laser beam homogenization,non-uniformity reduction,high-speed photolithography,optical components
更新于2025-09-12 10:27:22
-
Effect of plasmonic lens distribution on flight characteristics in rotational near-field photolithography
摘要： Rotational near-?eld photolithography exposes photoresists by exciting surface plasmon polaritons to realize nanopatterns with ultrahigh-resolution beyond the di?raction limit. This feature enables broad application prospects in the micro-nanomanufacturing ?eld. The lithography ?ight head, carrying a plasmonic lens (PL), with an approximately 10 nm spacer from the substrate, is the core of the system for e?ective etching. This paper investigates the ?ight state of a PL-loaded lithography head on the air ?lm, based on computational ?uid dynamics analysis. We found that the in?uence of the PL on the ?ight height produces an edge e?ect. This means that a PL fabricated on the edge region can signi?cantly a?ect the ?ight height of the head. By processing the PL at a distance of 10 μm from the edge of the slider tail block, a steady 37 nm linewidth depth pattern was ?nally realized, using a rotational near-?eld photolithography system.
关键词： edge effect,rotational near-field photolithography,flight characteristics,plasmonic lens,computational fluid dynamics
更新于2025-09-12 10:27:22
-
[IEEE 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Berlin, Germany (2019.6.23-2019.6.27)] 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) - Functional Plasmonic Fiber-Optic Based Sensors Using Low-Cost Microsphere Photolithography
摘要： This paper presents a technique for the low-cost fabrication of plasmonic fiber-optic based refractive-index sensors. The Microsphere Photolithography (MPL) technique was used to pattern nanoholes in a thin aluminum to create Extraordinary Optical Transmission (EOT) based sensors on the cleaved tip of SMF-28 optical fibers. This technique uses self-assembled microspheres as an optical element and facilitates very low-cost patterning of the plasmonic probes. As the refractive index of the media changes, the reflected spectrum of optical fiber changes. The fabricated sensors were immersed in water with different concentrations of glucose, and the lowest detection limit was found to be 33 mg/mL.
关键词： Fiber,Glucose detection,Microsphere photolithography,Plasmonic sensor
更新于2025-09-12 10:27:22