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2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration
摘要： The hardware implementation of neuromorphic computing has attracted growing interest as a promising candidate for confronting the bottleneck of traditional von Neumann computers. However, most previous reports are focused on emulating the synaptic behaviors by a mono-mode using an electric-driving or photo-driving approach, resulting in a big challenge to synchronously handle the natural photoelectric information. Herein, we report a multifunctional photoelectronic hybrid-integrated synaptic device based on the electric-double-layer (EDL) MoS2 phototransistor. Interestingly, the electric MoS2 synapse exhibits a potentiation filtering effect, while the photonic counterpart can implement both potentiation and depression filtering effects. Most importantly, for the first time, photoelectronic and spatio-temporal four-dimensional (4D) hybrid integration was successfully demonstrated by the synergic interplay between photonic and electric stimuli within a single MoS2 synapse. An energy band model is proposed to further understand such a photoelectronic and spatio-temporal 4D hybrid coupling mechanism. These results might provide an alternative solution for the size-scaling and intellectualization campaign of the post-Moore era, and for more sophisticated photoelectronic hybrid computing in the emerging neuromorphic nanoelectronics.
关键词： neuromorphic computing,electric-double-layer,synaptic device,MoS2 phototransistor,photoelectronic hybrid integration
更新于2025-11-25 10:30:42
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Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures
摘要： The combination of mixed-dimensional semiconducting materials can provide additional freedom to construct integrated nanoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performance dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separation efficiency of photogenerated electron–hole pairs can be greatly improved due to the high-quality interfacial contact between t-Se nanobelts and ReS2 films. Compared with bare ReS2 film devices, the dual-channel phototransistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D*) up to 98 A·W–1 and 6 × 1010 Jones at 400 nm illumination with an intensity of 1.7 mW·cm?2, respectively. Besides, the response time can also be reduced by three times of magnitude to less than 50 ms due to the type-II band alignment at the interface. This study opens up a promising avenue for high-performance photodetectors by constructing mixed-dimensional heterostructures.
关键词： phototransistor,van der Waals heterostructures,ReS2,trigonal selenium (t-Se) nanobelt
更新于2025-09-23 15:23:52
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Photoelectricity and thermoelectricity in organic chlorophyll phototransistors
摘要： As one kind of organic semiconductor materials, Chlorophyll has been attracted great attention with remarkable optical properties. Here, we demonstrate photoresponse and thermoelectric current in the biological Chlorophyll A field effect phototransistors (FEpTs). Meanwhile, it exhibits excellent performances including high responsivity (5×1013 A/W) and relatively fast response time (rise time ~ 20.3 s, fall time ~ 28.2 s) under illumination by 405 nm. Utilizing thermionic emission theory and typical Arrehenius plot, Schottky barrier B is found to be 76.6 meV. The biological phototransistor via low-cost, simple, and scalable fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and biologically optoelectronic devices.
关键词： Schottky junction,photoelectricity and thermoelectricity,Chlorophyll,Organic phototransistor
更新于2025-09-23 15:21:21
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[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Tunable WSe <sub/>2</sub> phototransistor enabled by electrostatically doped lateral p-n homojunction
摘要： This study demonstrates an approach to tune the responsivity and detectivity of a WSe2 phototransistor by incorporating an electrostatically doped lateral p-n junction in the form of side gates to the transistor channel. The resulting decrease in dark current and enhancement in photocurrent by externally injected carriers into the conduction channel leads to improved photodetection with a fast response time (τ).
关键词： photodetection,phototransistor,lateral p-n junction,electrostatic doping,WSe2
更新于2025-09-23 15:21:01
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Protein Content Sensor based on Plastic Optical Fiber
摘要： Plastic optical fiber (POF) content protein sensor has been developed. This sensor is made with a gamma and spiral configuration, with a cladding peel length of 5 cm. POF sensor is dipped into the container containing Bovine Serum Albumin (BSA) solution with different concentrations of 0.1-1 mg/ml. Both ends of the sensor are connected by Light Emiting Diode (LED) and Phototransistor. The LED light will propagate through the POF and it is received by the phototransistor. Light that propagates will be interfenced due to increasing of protein concentration around the sensor, so that the output voltage will be affected. The output voltage will be forwarded to Arduino Uno and read by the computer. The best results were obtained in a spiral configuration with 3 bending with a sensitivity of 0.007 Vml/mg and a resolution of 0.142 mg/ml. This method has advantages that are easy fabrication, simple measurement process, and low cost.
关键词： protein sensor,Plastic optical fiber,Phototransistor,Arduino Uno,Bovine Serum Albumin,LED
更新于2025-09-23 15:19:57
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Highly Efficient Photo-Induced Charge Separation enabled by Metal-Chalcogenide Interfaces in Quantum-Dot/Metal-Oxide Hybrid Phototransistors
摘要： Quantum dot (QD)-based optoelectronics have received a large amount of interest for the versatile applications due to their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, the QD-based hybrid devices which are combined with various high-mobility semiconductors have been actively researched to enhance the optoelectronic characteristics as well as maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors, and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance. Here, we report ultra-high detective phototransistors with highly efficient photo-induced charge separation using Sn2S6 4--capped CdSe QD/amorphous oxide semiconductor (AOS) hybrid structure. The photo-induced electron transfer characteristics at the interface of the two materials were comprehensively investigated with an array of electrochemical and spectroscopic analysis. In particular, the photocurrent imaging microscopy revealed that interface engineering in QD-AOS with chelating chalcometallate ligands cause efficient charge transfer, resulting in photovoltaic-dominated responses over whole channel area. On the other hands, monodentate ligands incorporated QD-AOS based devices typically exhibit limited charge transfer with atomic vibration, showing photo-thermoelectric-dominated responses in the drain electrode area.
关键词： quantum dots,scanning photocurrent microscopy,phototransistor,chalcometallate ligands,amorphous IGZO,ligand exchange
更新于2025-09-23 15:19:57
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Interplay of charge transfer and disorder in optoelectronic response in Graphene/hBN/MoS<sub>2</sub> van der Waals heterostructures
摘要： Strong optoelectronic response in the binary van der Waals heterostructures of graphene and transition metal dichalcogenides (TMDCs) is an emerging route towards high-sensitivity light sensing. While the high sensitivity is an effect of photogating of graphene due to inter-layer transfer of photo-excited carriers, the impact of intrinisic defects, such as traps and mid-gap states in the chalcogen layer remain largely unexplored. Here we employ graphene/hBN (hexagonal boron nitride)/MoS2 (molybdenum disulphide) trilayer heterostructures to explore the photogating mechanism, where the hBN layer acts as interfacial barrier to tune the charge transfer timescale. We find two new features in the photoresponse: First, an unexpected positive component in photoconductance upon illumination at short times that preceeds the conventional negative photoconductance due to charge transfer, and second, a strong negative photoresponse at infrared wavelengths (up to 1720 nm) well-below the band gap of single layer MoS2. Detailed time and gate voltage-dependence of the photoconductance indicates optically-driven charging of trap states as possible origin of these observations. The responsivity of the trilayer structure in the infrared regime was found to be extremely large (> 108 A/W at 1550 nm using 20 mV source drain bias at 180 K temperature and ≈ ?30 V back gate voltage). Our experiment demonstrates that interface engineering in the optically sensitive van der Waals heterostructures may cast crucial insight onto both inter- and intra-layer charge reorganization processes in graphene/TMDC heterostructures.
关键词： defects and disorders in TMDCs,monolayer MoS2,phototransistor,graphene,infrared photodetection,Van der Waals heterostructures
更新于2025-09-23 15:19:57
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Unsymmetrical Small Molecules for Broadband Photoresponse and Efficient Charge Transport in Organic Phototransistors
摘要： Organic photosensitizers have been investigated as effective light sensing elements that can promote strong absorption with high field-effect mobility in organic phototransistors (OPTs). In this study, a novel organic photosensitizer is synthesized to demonstrate broadband photoresponse with enhanced electrical performance. An unsymmetrical small molecule of a solubilizing donor(Dsol)-acceptor(A)-dye donor(Ddye) type connected with twisted conjugation system is designed for broadband detection (ranging from 250 nm to 700 nm). This molecule has high solubility, thereby facilitating the formation of uniformly dispersed nanoparticles in an insulating polymer matrix, which is deposited on top of OPT semiconductors by a simple solution process. The broadband photodetection shown by the organic photosensitizer is realized with improved mobility by close to an order of magnitude and high on/off current ratio (~105) of the organic semiconductor. Furthermore, p-type charge transport behavior in the channel of the OPT is enhanced through the intrinsic electron-accepting ability of the organic photosensitizer, caused by the unique molecular configuration. These structural properties of organic photosensitizers contribute to an improvement in broadband photosensing systems with new optoelectronic properties and functionalities.
关键词： Photosensitizer,Surface doping,Broadband detection,Phototransistor,Charge trap
更新于2025-09-23 15:19:57
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Gate Tunable Symmetric Bipolar Junction Transistor Fabricated via Femtosecond Laser Processing
摘要： Two-dimensional (2D) bipolar junction transistor (BJT) with van der Waals heterostructures plays an important role in the development of future nanoelectronics. Herein, a convenient method is introduced for fabricating a symmetric bipolar junction transistor (SBJT) constructed with black phosphorus and MoS2 with femtosecond laser processing. This SBJT exhibits good bidirectional current amplification thanks to its symmetric structure. Next, we place a top gate on one side of the SBJT to change the difference in the major carrier concentration between the emitter and collector in order to further investigate the effect of electrostatic doping on the device’s performance. The SBJT can also act as a gate tunable phototransistor with good photodetectivity and photocurrent gain of β ~ 21. Scanning photocurrent images are used to determine the mechanism governing photocurrent amplification in the phototransistor. These results promote the development of the applications of multifunctional nanoelectronics based on 2D materials.
关键词： Femtosecond laser processing,Phototransistor,Two-dimensional materials,Bipolar junction transistor,Gate tunable
更新于2025-09-23 15:19:57
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Near-infrared-II photodetection realized by introducing organic-inorganic charge-transfer-complex photosensitive material into pentacene phototransistor
摘要： Organic phototransistor (OPT) is a promising photodetector with substantial attention due to its advantages such as low cost, light weight, flexibility and ease of large area preparation. Although the second near-infrared (NIR-II) window (1.0-1.7 microns) has important applications in fiber communication, the organic infrared photosensitive materials are scarce in this waveband, which greatly limits the application of organic photodetectors in near-infrared bands. In this work, a charge-transfer-complex (CTC) film with significant hyperchromic effect in the infrared range of 1000-1400 nm was prepared by co-evaporation of metal oxide WO3 and organic molecule m-MTDATA. A high performance near-infrared OPT was fabricated by combining this CTC photosensitive layer and pentacene (PENT) high-mobility channel layer, the photoresponsivity R of which has surpassed the recent reported level of 1.1 micron band inorganic infrared detector. The physical mechanism underlying the operation of CTC-PENT-OPT was clarified and the thickness of the CTC photosensitive film in this device was optimized. This new type of organic-inorganic CTC infrared-sensitive material will offer a new choice for the future study on organic infrared detectors.
关键词： Photodetection,Charge-transfer-complex,Pentacene,Near-infrared-II,Organic phototransistor
更新于2025-09-19 17:13:59