研究目的
Investigating the fabrication and performance of a symmetric bipolar junction transistor (SBJT) constructed with black phosphorus and MoS2 using femtosecond laser processing, and its application as a gate tunable phototransistor.
研究成果
The study presents a novel, convenient method for fabricating a symmetric PNP SBJT from p-type BP and n-type MoS2 using FSLP. The SBJT exhibits bidirectional electrical output due to its symmetric band structure and can act as a phototransistor with a maximum photoresponsivity of 151 mA/W and a photocurrent gain of β ~ 21. The results illustrate the potential for developing multifunctional heterostructure devices based on 2D materials.
研究不足
The current gain β of the SBJT is relatively low (~6 and ~3 for different configurations), attributed to the gap size made by laser processing and the doping concentration mismatch between BP and MoS2. The performance could be improved by optimizing the device construction, such as shortening the gap width between the emitter and collector.
1：Experimental Design and Method Selection:
The study employs femtosecond laser processing (FSLP) for fabricating a symmetric bipolar junction transistor (SBJT) from p-type black phosphorus (BP) and n-type MoS2. The method includes cutting BP flakes with FSLP and bridging them with MoS2 using a dry-transfer technique.
2：The method includes cutting BP flakes with FSLP and bridging them with MoS2 using a dry-transfer technique.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: BP and MoS2 flakes were mechanically exfoliated and transferred onto a SiO2/p+-doped Si substrate. The thickness of the flakes was measured using atomic force microscopy.
3：List of Experimental Equipment and Materials:
A femtosecond laser (800 nm, 35 fs, and 30 mW), magnetron sputtering for electrode deposition, and a confocal Raman/AFM system for characterization.
4：Experimental Procedures and Operational Workflow:
The fabrication process involves exfoliating BP, cutting it with FSLP, transferring MoS2 to bridge the BP pieces, depositing hBN as a top gate dielectric, and patterning Au electrodes.
5：Data Analysis Methods:
Electrical and optoelectrical measurements were performed using a semiconductor parameter analyzer and scanning photocurrent images (SPI) were gathered to analyze the device's performance.
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