研究目的
Investigating the tunability of responsivity and detectivity in a WSe2 phototransistor through the use of an electrostatically doped lateral p-n junction.
研究成果
The incorporation of an electrostatically doped lateral p-n junction significantly enhances the photodetection capabilities of WSe2 phototransistors, offering tunable responsivity and detectivity with a fast response time.
研究不足
The study is limited by the specific architecture of the phototransistor and the materials used, which may not be universally applicable. The performance under different wavelengths or power densities is not extensively explored.
1：Experimental Design and Method Selection:
The study employs a selected gate architecture with an independent middle gate (MG) sandwiched between two electrically connected side gates (SG) to form a WSe2 FET channel.
2：Sample Selection and Data Sources:
The device is fabricated on a Si/SiO2 substrate with hBN and WSe2 flakes stacked over the selected gates.
3：List of Experimental Equipment and Materials:
Electron beam lithography (EBL) for patterning, Cr/Au and Cr/Pt for deposition, and a 532 nm focused laser for illumination.
4：Experimental Procedures and Operational Workflow:
The process involves defining the gate pattern, stacking hBN and WSe2 flakes, and patterning S/D electrodes.
5：Data Analysis Methods:
Transfer characteristics (ID-VMG) and I-V measurements under illumination are analyzed to assess device performance.
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