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Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy
摘要： The interface between a gate insulator (Al2O3) and a semiconductor (GaN) was investigated via surface-sensitive Ga K-edge extended X-ray absorption fine structure spectroscopy, achieved by detecting the Ga LMM Auger electrons originated from the Ga K-shell absorption. This GaN-side interface study was conducted on Al2O3 thin films formed via atomic layer deposition. The determined atomic structures revealed GaN crystalline changes and the formation of Ga–O bonds due to nitrogen annealing.
关键词： Aluminum oxide (Al2O3),Interface,Post-deposition annealing (PDA),Gallium nitride (GaN),Extended X-ray absorption fine structure (EXAFS),Atomic layer deposition (ALD)
更新于2025-09-19 17:13:59
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Annealing Impact on Interface Properties of Sprayed Al2O3-Based MIS Structure for Silicon Surface Passivation
摘要： Aluminum oxide (Al2O3) films of different thicknesses were deposited on quartz and silicon (100) substrates by an ultrasonic spray method from a solution of aluminum acetylacetonate dissolved in N,N-dimethylformamide with different molar concentrations. The optical, morphological and electrical properties were investigated. Increasing the molar concentration leads to a refractive index decrease, an increase in the optical band gap from 5.26 eV to 5.52 eV and a change in the surface roughness of the films. The electrical parameters at the Al2O3/Si interface such as the flat band voltage (VFB), effective charge density (Qeff) and interface trap density (Dit) were explored as a function of the molar concentration, film thickness and heat treatment. The latter, done by two annealing processes, namely, the post deposition annealing (PDA) and post metallization annealing (PMA) on the structure, lead to remarkable interface properties. It was found that the positive flat band voltage VFB shift is correlated with the generation of negative effective charge during PMA. A decrease of the Dit distribution in the PMA samples with no significant effect in the case of PDA samples was clearly observed for different molar concentrations. Furthermore, as the Al2O3 film thickness decreases, Dit decreases in both PDA and PMA samples while the relatively high density Qeff and its negative charge polarity were obtained for thinner films. A noticeable passivation effect on the Al2O3/Si interface has been confirmed on samples that underwent the annealing process. These findings related specifically to the interface properties are promising for silicon surface passivation, in particular for solar cells applications.
关键词： Al2O3,surface passivation,ultrasonic spray,post-metallization annealing,post-deposition annealing
更新于2025-09-10 09:29:36
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Study of the oxidation at the Al <sub/>2</sub> O <sub/>3</sub> /GaSb interface after NH <sub/>4</sub> OH and HCl/(NH <sub/>4</sub> ) <sub/>2</sub> S passivations and O <sub/>2</sub> plasma post atomic layer deposition process
摘要： In this work, the Al2O3/GaSb interface has been studied by x-ray photoelectron spectroscopy in order to improve interfacial and electrical properties of metal–oxide–semiconductor structures based on GaSb. First, different passivations using NH4OH or (NH4)2S were studied with a dilution of 4% and 5%, respectively, in order to reduce native oxides on the GaSb surface. Then, we considered the oxidation of the Al2O3 and GaSb surface after treatments with an oxygen (O2) plasma post atomic layer deposition (ALD) process and with post deposition annealing at different temperatures. We found that (NH4)2S passivation leads to a lower quantity of native oxides on the GaSb surface and that the O2 plasma post ALD process enables the formation of an oxygen-rich layer within the Al2O3 at the interface reducing the GaSb surface oxidation after post deposition annealing of the oxide.
关键词： x-ray photoelectron spectroscopy,(NH4)2S,post deposition annealing,Al2O3/GaSb interface,NH4OH,atomic layer deposition,O2 plasma
更新于2025-09-10 09:29:36