研究目的
Investigating the local atomic structure of the GaN-side of the Al2O3/GaN interface and its changes due to post-deposition annealing treatment.
研究成果
The study successfully analyzed the GaN-side of the Al2O3/GaN interface using surface-sensitive Ga K-edge EXAFS spectroscopy, revealing GaN crystalline changes and the formation of Ga–O bonds due to nitrogen annealing. This method contributes to the development of GaN-based power semiconductor devices by enabling the analysis of local atomic structures in material interfaces.
研究不足
The study was conducted on thin films with a 3 nm thickness, which may require thinning by etching for further analysis. The method's applicability to other material interfaces and its sensitivity to very thin layers are potential areas for optimization.
1：Experimental Design and Method Selection:
Surface-sensitive Ga K-edge EXAFS spectroscopic measurements were conducted by detecting Ga LMM Auger electrons.
2：Sample Selection and Data Sources:
Al2O3 thin films were deposited on GaN(0001) single-crystal substrates via ALD at 250 °C, followed by PDA at 650 and 800 °C in nitrogen.
3：List of Experimental Equipment and Materials:
Measurements were performed at the BL16XU beamline in SPring-8, using an electron analyzer (R4000, Scienta Omicron GmbH) for detecting Auger electrons.
4：Experimental Procedures and Operational Workflow:
The Ga K-edge EXAFS spectra were obtained by monitoring the intensity of Ga LMM Auger electrons during X-ray energy sweeps.
5：Data Analysis Methods:
EXAFS oscillations were extracted and Fourier transformed to reveal the radial structure functions of Ga atoms.
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