- 标题
- 摘要
- 关键词
- 实验方案
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Optical Pressure Sensor Based on the Emission and Excitation Band Width (FWHM) and Luminescence Shift of Ce3+ Doped Fluorapatite – High-Pressure Sensing
摘要： A novel, contactless optical sensor of pressure based on the luminescence red-shift and band width (full width at half maximum - FWHM) of the Ce3+-doped fluorapatite - Y6Ba4(SiO4)6F2 powder, has been successfully synthesized via a facile solid-state method. The obtained material exhibits a bright blue emission under UV light excitation. It was characterized using powder X-ray diffraction, scanning electron microscopy and luminescence spectroscopy, including high-pressure measurements of excitation and emission spectra, up to above ≈30 GPa. Compression of the material resulted in a significant red-shift of the allowed 4f→5d and 5d→4f transitions of Ce3+ in the excitation and emission spectra, respectively. The pressure-induced monotonic shift of the emission band, as well as changes in the excitation/emission band widths, have been correlated with pressure for sensing purposes. The material exhibits a high pressure sensitivity (dλ/dP ≈0.63 nm/GPa), and outstanding signal intensity at high-pressure conditions (≈90% of the initial intensity at around 20 GPa) with minimal pressure-induced quenching of luminescence.
关键词： Ce3+ doping,Contactless pressure gauge,Y6Ba4(SiO4)6F2 apatite phosphors,Lanthanide ions (Ln3+),Compression in DAC,Luminescent functional materials
更新于2025-09-23 15:23:52
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Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method
摘要： To study the applications for ferroelectric non-volatile memory and ferroelectric memristor, etc., deposition pressure dependent electric the properties of (Hf, Zr)O2 thin films by RF sputtering deposition method were investigated. The bottom electrode was TiN thin film to produce stress effect on the formation of orthorhombic phase and top electrode was Pt thin film by DC sputtering deposition. Deposition pressure was varied along with the same other deposition conditions, for example, sputtering power, target to substrate distance, post-annealing temperature, annealing gas, annealing time, etc. The structural and electric properties of the above thin films were investigated. As a result, it is confirmed that the electric properties of the (Hf, Zr)O2 thin films depend on the deposition pressure which affects structural properties of the thin films, such as, structural phase, ratio of the constituents, etc.
关键词： (Hf,Zr)O2,Sputtering,Deposition pressure,Ferroelectric
更新于2025-09-23 15:23:52
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Fundamental Study on Blood Pressure Measurement by FBG Sensor
摘要： In recent years, the demands for vital sign measurement system have been increasing, such as home health care for elderly people, or self-health management for healthy people. In this study, we aimed at the development of a non-invasive wearable device to measure vital sign. We use a Fiber Bragg Grating (FBG) sensor as pulse wave sensor. A FBG sensor is the optical ?ber. Therefore, a FBG sensor has a lot of features. Its characteristics are suitable for the measurement of vital signs at all times. We ?x FBG sensors to di?erent two points of the body surface and acquired pulse wave. We calculated the systolic blood pressure by using Pulse Transit Time (PTT) which is arrival time lag of pulse wave. We have con?rmed the validity of the principle of systolic blood pressure measurement by FBG sensors.
关键词： wearable,blood pressure measurement,FBG sensor
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - Bangalore (2018.3.16-2018.3.17)] 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric
摘要： AlInN/GaN metal insulator semiconductor high electron mobility transistor (MIS-HEMT) with high pressure oxidized aluminium as gate dielectric is investigated in this paper. The fabricated MIS-HEMT shows more than six orders of reduction in the gate leakage current in reverse bias and more than three orders of reduction in forward bias compared to the reference HEMT devices also fabricated on same substrates. A maximum drain current of 750 mA/mm was achieved due to improvement in the gate swing for MIS-HEMT. The MIS-HEMT devices also showed good improvement in the subthreshold slope and ID,ON/ID,OFF ratio compared to HEMT devices.
关键词： gate leakage current,MIS-HEMT,high pressure oxidation,AlInN/GaN,HEMT,Al2O3
更新于2025-09-23 15:23:52
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Using Alternative Light Source Technology to Enhance Visual Inspection of the Skin
摘要： BACKGROUND: The identification of deep tissue pressure injury (DTPI) in the early stages of evolution presents a challenge, as skin compromise is only visually apparent when evidence of damage reaches its outer layers. CASE DESCRIPTION: We describe use of an alternative light source (ALS) to enhance visual skin assessment in 3 cases. Case 1 was a 47-year-old African American man with a hyperpigmented inner buttocks and a mixture of partial- and shallow full-thickness skin loss from incontinence-associated dermatitis and friction. Case 2 was a 62-year-old African American woman with a gluteal cleft DTPI. Case 3 was a 57-year-old African American woman with a stage 3 pressure injury of the right buttock. CONCLUSION: The ALS enabled visualization of skin nuances not visible to the unaided eye. Based on this experience, we conclude that use of an ALS provided additional visual details when compared to traditional visual inspection. We found that as the ALS interplays with skin layers, penetrating and absorbing at differing depths, compromised skin appeared darker and more distinct when compared to adjacent, intact skin. Additional research is needed to determine whether the ALS enables earlier pressure injury detection, timelier and more effective intervention, decreased morbidity, and cost savings.
关键词： Alternative light source,Pressure injury,Deep tissue pressure injury,Pressure ulcer
更新于2025-09-23 15:22:29
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Quantifying Double-Layer Potentials at Liquid–Gas Interfaces from Vibrational Sum-Frequency Generation
摘要： Vibrational sum-frequency generation (SFG) spectroscopy is demonstrated as a fast method to quantify variations of the electric double-layer potential ?0 at liquid?gas interfaces. For this, mixed solutions of nonionic tetraethyleneglycol-monodecylether (C10E4) and cationic hexadecyltrimethylammonium bromide (C16TAB) surfactants were investigated using SFG spectroscopy and a thin-film pressure balance (TFPB). Derjaguin?Landau?Verwey?Overbeek analysis of disjoining pressure isotherms obtained with the TFPB technique provides complementary information on ?0, which we apply to validate the results from SFG spectroscopy. By using a single ?0 value, we can disentangle χ(2) and χ(3) contributions to the O?H stretching modes of interfacial water molecules in the SFG spectra. Having established the latter, we show that unknown double-layer potentials at the liquid?gas interface from solutions with different C16TAB/C10E4 mixing ratios can be obtained from an analysis of SFG spectra and are in excellent agreement with the complementary results from the TFPB technique.
关键词： disjoining pressure,Vibrational sum-frequency generation,electric double-layer potential,thin-film pressure balance,liquid?gas interfaces,surfactants
更新于2025-09-23 15:22:29
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Chemical Vapor Deposition for Nanotechnology || Atmospheric Pressure Chemical Vapor Deposition of Graphene
摘要： Recently, graphene has gained significant interest owing to its outstanding conductivity, mechanical strength, thermal stability, etc. Among various graphene synthesis methods, atmospheric pressure chemical vapor deposition (APCVD) is one of the best syntheses due to very low diffusivity coefficient and a critical step for graphene-based device fabrication. High-temperature APCVD processes for thin film productions are being recognized in many diversity technologies such as solid state electronic devices, in particular, high quality epitaxial semiconductor films for silicon bipolar and metal oxide semiconductor (MOS) transistors. Graphene-based devices exhibit high potential for applications in flexible electronics, optoelectronics, and energy harvesting. In this chapter, recent advances of APCVD-based graphene synthesis and their related applications will be addressed.
关键词： large-scale,atmospheric pressure chemical vapor deposition (APCVD),graphene,bilayer graphene (BLG),single-layer graphene (SLG),atmosphere pressure
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Budapest (2018.7.1-2018.7.5)] 2018 IEEE 2nd International Conference on Dielectrics (ICD) - Effect of Interfacial Pressure on Electrical Tree between XLPE and Silicone Rubber
摘要： XLPE and silicone rubber (SIR) have been widely used in power cables and accessories for their excellent mechanical and electrical performance. However, the interface between them in accessories remains one of the weakest parts in the cable system. Electrical treeing is an important destructive factor for HV insulation structures, and it always leads to final breakdown. Therefore, it is essential to investigate the effects of interfacial pressure on electrical tree. In this paper, tests were carried out by pressing XLPE and SIR samples together under different interfacial pressures with a specific pressing device. AC voltage was applied on a pair of pin-plane electrodes placed at the interface. The pin-plane distance was 2 mm. The needle diameter was 0.25 mm and the tip curvature radius was (10±1) μm. Under different interfacial pressures, the voltages for electrical trees to initiate were recorded and statistically analyzed. Meanwhile, the tree morphology and breakdown channel were also captured by using a digital micro-imaging system. The results show that at a low interfacial pressure of 50 kPa, no electrical trees can be observed. Instead, discharge light can be seen at the interface. As the interfacial pressure increases, electrical tree begins to appear. It is found that at 75 kPa, electrical tree initiates and grows, which finally leads to a severe breakdown along the interface. While at pressures above 100 kPa, electrical tree tends to grow into SIR side, and the breakdown channel is slender, only observed in the SIR. Besides, the electrical tree initiation voltage increases with the increase of the interfacial pressure. It indicates that a high interfacial pressure can effectively delay the initiation of electrical trees, and for the two materials that constitute the interface, XLPE seems to have a better electrical treeing endurance than the SIR.
关键词： interfacial pressure,silicone rubber,electrical tree,XLPE cable accessory
更新于2025-09-23 15:22:29
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Direct exposure of non-equilibrium atmospheric pressure plasma confers simultaneous oxidative and ultraviolet modifications in biomolecules
摘要： Thermal plasmas and lasers are used in medicine to cut and ablate tissues and for coagulation. Non-equilibrium atmospheric pressure plasma (NEAPP) is a recently developed, non-thermal technique with possible biomedical applications. Although NEAPP reportedly generates reactive oxygen/nitrogen species, electrons, positive ions, and ultraviolet radiation, little research has been done into the use of this technique for conventional free radical biology. Recently, we developed a NEAPP device with high electron density. Electron spin resonance spin-trapping revealed ?OH as a major product. To obtain evidence of NEAPP-induced oxidative modifications in biomolecules and standardize them, we evaluated lipid peroxidation and DNA modifications in various in vitro and ex vivo experiments. Conjugated dienes increased after exposure to linoleic and α-linolenic acids. An increase in 2-thiobarbituric acid-reactive substances was also observed after exposure to phosphatidylcholine, liposomes or liver homogenate. Direct exposure to rat liver in saline produced immunohistochemical evidence of 4-hydroxy-2-nonenal- and acrolein-modified proteins. Exposure to plasmid DNA induced dose-dependent single/double strand breaks and increased the amounts of 8-hydroxy-2'-deoxyguanosine and cyclobutane pyrimidine dimers. These results indicate that oxidative biomolecular damage by NEAPP is dose-dependent and thus can be controlled in a site-specific manner. Simultaneous oxidative and UV-specific DNA damage may be useful in cancer treatment.
关键词： 8-OHdG,HNE-modified protein,non-equilibrium atmospheric pressure plasma,electron spin resonance spin-trapping,UV
更新于2025-09-23 15:22:29
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[Methods in Molecular Biology] Autophagy Volume 1880 (Methods and Protocols) || Correlative Light and Electron Microscopy to Analyze LC3 Proteins in Caenorhabditis elegans Embryo
摘要： In this chapter, we present a protocol to perform correlative light and electron microscopy (CLEM) on Caenorhabditis elegans embryos. We use a specific fixation method which preserves both the GFP fluorescence and the structural integrity of the samples. Thin sections are first analyzed by light microscopy to detect GFP-tagged proteins, then by transmission electron microscopy (TEM) to characterize the ultrastructural anatomy of cells. The superimposition of light and electron images allows to determine the subcellular localization of the fluorescent protein. We have used this method to characterize the roles of autophagy in the phagocytosis of apoptotic cells in C. elegans embryos. We analyzed in apoptotic cell and phagocytic cell the localization of the two homologs of LC3/GABARAP proteins, namely, LGG-1 and LGG-2.
关键词： LC3-associated phagocytosis,High-pressure freezing,Freeze substitution,LGG-2,Green fluorescent protein,GMA resin,LGG-1
更新于2025-09-23 15:22:29