- 标题
- 摘要
- 关键词
- 实验方案
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Higha??temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
摘要： We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces. The use of high temperatures for the self-assembly of droplet epitaxy quantum dots solves major issues related to material defects, introduced during the droplet epitaxy fabrication process, which limited its use for single and entangled photon sources for quantum photonics applications. We identify the region in the parameter space which allows quantum dots to self–assemble with the desired emission wavelength and highly symmetric shape while maintaining a high optical quality. The role of the growth parameters during the droplet arsenization is discussed and modeled.
关键词： GaAs/AlGaAs,quantum photonics,arsenization dynamics,high–temperature droplet epitaxy,quantum dots
更新于2025-09-23 15:21:01
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Quantum Memristors in Frequency-Entangled Optical Fields
摘要： A quantum memristor is a passive resistive circuit element with memory, engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system–bath coupling is mediated through a weak measurement scheme and classical feedback on the system. In quantum photonics, such a device can be designed from a beam splitter with tunable reflectivity, which is modified depending on the results of measurements in one of the outgoing beams. Here, we show that a similar implementation can be achieved with frequency-entangled optical fields and a frequency mixer that, working similarly to a beam splitter, produces state superpositions. We show that the characteristic hysteretic behavior of memristors can be reproduced when analyzing the response of the system with respect to the control, for different experimentally attainable states. Since memory effects in memristors can be exploited for classical and neuromorphic computation, the results presented in this work could be a building block for constructing quantum neural networks in quantum photonics, when scaling up.
关键词： quantum photonics,quantum neural networks,memristive systems,quantum memristors
更新于2025-09-23 15:19:57
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Femtosecond laser modification of 6Ha??SiC crystals for waveguide devices
摘要： We report on optical waveguides produced by a femtosecond laser in 6H–SiC crystals. Their guiding properties have been investigated at a wavelength of 1064 nm, and confocal micro-Raman images have been obtained at an excitation wavelength of 532 nm. The results demonstrate that mode pro?les can be tailored by the adjustment of writing parameters, and the blueshift of the spectrum (at around 787.05 cm?1) mainly takes place in the irradiated areas. From images of Raman intensity and spectral shift, it is obvious that optical properties in guiding regions are well preserved. These waveguides may have potential applications in integrated optics and quantum photonics.
关键词： femtosecond laser,6H–SiC crystals,optical waveguides,quantum photonics,integrated optics
更新于2025-09-23 15:19:57
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<i>In situ</i> wavelength tuning of quantum-dot single-photon sources integrated on a CMOS-processed silicon waveguide
摘要： Silicon quantum photonics provides a promising pathway to realize large-scale quantum photonic integrated circuits (QPICs) by exploiting the power of complementary-metal-oxide-semiconductor (CMOS) technology. Toward scalable operation of such silicon-based QPICs, a straightforward approach is to integrate deterministic single-photon sources (SPSs). To this end, hybrid integration of deterministic solid-state SPSs, such as those based on InAs/GaAs quantum dots (QDs), is highly promising. However, the spectral and spatial randomness inherent in the QDs poses a serious challenge for scalable implementation of multiple identical SPSs on a silicon CMOS chip. To overcome this challenge, we have been investigating a hybrid integration technique called transfer printing, which is based on a pick-and-place operation and allows for the integration of the desired QD SPSs on any locations on the silicon CMOS chips at will. Nevertheless, even in this scenario, in situ fine tuning for perfect wavelength matching among the integrated QD SPSs will be required for interfering photons from dissimilar sources. Here, we demonstrate in situ wavelength tuning of QD SPSs integrated on a CMOS silicon chip. To thermally tune the emission wavelengths of the integrated QDs, we augmented the QD SPSs with optically driven heating pads. The integration of all the necessary elements was performed using transfer printing, which largely simplified the fabrication of the three-dimensional stack of micro/nanophotonic structures. We further demonstrate in situ wavelength matching between two dissimilar QD sources integrated on the same silicon chip. Our transfer-printing-based approach will open the possibility for realizing large-scale QPICs that leverage CMOS technology.
关键词： wavelength tuning,transfer printing,quantum photonics,single-photon sources,silicon CMOS,quantum dots
更新于2025-09-16 10:30:52
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[IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Silicon Photonics for Quantum Communication
摘要： Silicon quantum photonics, capable to integrate large numbers of optical components with CMOS-compatible fabrication technology and reliable control of quantum states, is expected to play a critical role in future quantum communication. In this talk, we will introduce our recent results of silicon photonics for quantum communication, including high-dimensional silicon chip-to-chip quantum key distribution, chip-to-chip quantum teleportation, on-chip generation of high-dimensional quantum entanglement, and Hong–Ou–Mandel interference between two different III-V/silicon hybrid lasers towards future measurement device independent quantum communication.
关键词： quantum entanglement,high-dimensional quantum photonics,Hong-Ou-Mandel interference,silicon photonics,quantum communication,quantum key distribution
更新于2025-09-11 14:15:04
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On‐Chip Integration of Single Photon Sources via Evanescent Coupling of Tapered Nanowires to SiN Waveguides
摘要： A method to integrate nanowire-based quantum dot single photon sources on-chip using evanescent coupling is demonstrated. By deterministically placing an appropriately tapered III-V nanowire, containing a single quantum dot, on top of a silicon-based ridge waveguide, the quantum dot emission directed toward the taper can be transferred to the ridge waveguide with calculated e?ciencies close to 100%. As the evanescent coupling is bidirectional, the source can be optically pumped in both free-space and through the ridge waveguide. The latter con?guration paves the way toward a self-contained, all-?ber, plug-and-play solution for applications requiring a bright on-demand single photon source. Using InAsP quantum dots embedded in InP nanowire waveguides, coupling e?ciencies to a SiN ridge waveguide of 74% with a single photon purity of 97% are demonstrated. The technique to demonstrate deterministic placement of single quantum emitters onto pre-fabricated waveguides is used, an important step toward the fabrication of complex quantum photonic circuits.
关键词： nanowire quantum dots,single photon sources,integrated quantum photonics
更新于2025-09-11 14:15:04
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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Indistinguishable On-Chip Single-Photon Sources
摘要： Progress on integrating InGaAs quantum-dot single-photon sources within GaAs semiconductor photonic chips is reviewed. With resonant excitation, a radiative lifetime as short as 23 ps has been observed for a dot in a photonic-crystal nano-cavity, leading to single-photon emission with both high purity and indistinguishability.
关键词： Purcell effect,photonic nano-structure,single-photon source,integrated quantum photonics,quantum dot
更新于2025-09-11 14:15:04
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Scaling up solid-state quantum photonics
摘要： A deterministic interface between a single atom and a single optical photon is the essential building block underpinning many quantum applications of light for quantum communication, sensing, and simulations. Light and matter interact weakly with each other, so the challenge is to create conditions enabling strong interactions. Fortunately, solid-state quantum photonics has matured dramatically, and it is possible to create artificial photonic nanostructures that markedly enhance light-matter coupling. Moreover, single atoms, which are cumbersome to control experimentally because they need to be trapped and cooled, can be replaced by solid-state quantum emitters such as vacancy centers in diamond, molecules, or quantum dots. The high quality and purity of these systems now imply that coherent and near-deterministic photon-emitter interfaces are routinely constructed, but it is still challenging to scale up and deterministically couple multiple quantum emitters. On page 662 of this issue, Evans et al. report on the successful coupling of two diamond silicon vacancy (SiV) quantum emitters mediated by their mutual coupling to a nanophotonic cavity. Radiative coupling leads to the formation of an entangled state between the two emitters.
关键词： diamond,entanglement,silicon vacancies,solid-state quantum photonics,quantum optics
更新于2025-09-11 14:15:04
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Integrated Semiconductor Quantum Photonics
摘要： For fundamental tests of quantum physics as well as for quantum communications, non-classical states of light are an important tool. In this talk, we will present our work on developing nonlinear AlGaAs waveguides into a platform for quantum photonics in semiconductors. Most III-V semiconductors exhibit a large second-order optical nonlinearity, but phase-matching the nonlinear interaction is notoriously difficult. As a solution Bragg-reflection waveguides allow efficient creation of photon pairs through spontaneous parametric down-conversion. They have the potential to be homogeneously integrated with a pump laser and passive and active components on the chip. In our waveguides, we can create high-fidelity polarization [1] and time-bin entangled [2] photon pairs, which cover a large frequency band in the low-loss telecommunication window, suitable for serving multiple users through wavelength division multiplexing. For all our applications, it is important that we can design the desired linear and nonlinear properties, which in turn makes precise characterization necessary. For this purpose, we have developed a Fourier-transform Fabry-Perot spectroscopy technique [3], which yields the relevant device parameters with superior accuracy. We will further present our results on devices that integrate electrically injected lasers and the nonlinear conversion. A layer of quaternary quantum dots acts as the gain medium in a Fabry-Perot waveguide laser, which lases at room temperature in the Bragg mode, i.e. the pump mode for creating photon pairs. We will close with an outlook on further device integration towards a complete semiconductor quantum photonics platform.
关键词： AlGaAs waveguides,photon pairs,Bragg-reflection waveguides,quantum photonics,Fourier-transform Fabry-Perot spectroscopy,spontaneous parametric down-conversion
更新于2025-09-11 14:15:04
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On-Demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
摘要： The field of semiconductor nanowires (NWs) has become one of the most active and mature research areas. However, progress in this field has been limited, due to the difficulty in controlling the density, orientation, and placement of the individual NWs, parameters important for mass producing nanodevices. The work presented herein describes a novel nanosynthesis strategy for ultrathin self-aligned silicon carbide (SiC) NW arrays (≤ 20 nm width, 130 nm height and 200–600 nm variable periodicity), with high quality (~2 ? surface roughness, ~2.4 eV optical bandgap) and reproducibility at predetermined locations, using fabrication protocols compatible with silicon microelectronics. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, ultraviolet-visible spectroscopic ellipsometry, atomic force microscopy, X-ray diffractometry, and transmission electron microscopy studies show nanosynthesis of high-quality polycrystalline cubic 3C-SiC materials (average 5 nm grain size) with tailored properties. An extension of the nanofabrication process is presented for integrating technologically important erbium ions as emission centers at telecom C-band wavelengths. This integration allows for deterministic positioning of the ions and engineering of the ions’ spontaneous emission properties through the resulting NW-based photonic structures, both of which are critical to practical device fabrication for quantum information applications. This holistic approach can enable the development of new scalable SiC nanostructured materials for use in a plethora of emerging applications, such as NW-based sensing, single-photon sources, quantum LEDs, and quantum photonics.
关键词： silicon carbide,telecom wavelengths,nanofabrication,self-aligned nanowires,ultrathin nanowires,quantum photonics
更新于2025-09-10 09:29:36