研究目的
Developing nonlinear AlGaAs waveguides into a platform for quantum photonics in semiconductors.
研究成果
The development of nonlinear AlGaAs waveguides into a platform for quantum photonics in semiconductors has been presented, with the creation of high-fidelity entangled photon pairs and the integration of electrically injected lasers and nonlinear conversion. The outlook includes further device integration towards a complete semiconductor quantum photonics platform.
研究不足
Phase-matching the nonlinear interaction in III-V semiconductors is notoriously difficult.
1:Experimental Design and Method Selection:
Development of nonlinear AlGaAs waveguides for quantum photonics, utilizing Bragg-reflection waveguides for efficient creation of photon pairs through spontaneous parametric down-conversion.
2:Sample Selection and Data Sources:
Use of III-V semiconductors with large second-order optical nonlinearity.
3:List of Experimental Equipment and Materials:
AlGaAs waveguides, Bragg-reflection waveguides, Fabry-Perot waveguide laser with quaternary quantum dots as the gain medium.
4:Experimental Procedures and Operational Workflow:
Creation of high-fidelity polarization and time-bin entangled photon pairs, design of linear and nonlinear properties, precise characterization using Fourier-transform Fabry-Perot spectroscopy.
5:Data Analysis Methods:
Fourier-transform Fabry-Perot spectroscopy technique for superior accuracy in device parameter measurement.
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