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Suggestions on Efficiency Droop of GaN-based LEDs
摘要： InGaN/GaN-based light-emitting diodes (LEDs) are widely used in modern society and industry among different areas. However, InGaN/GaN LEDs suffer from an efficiency droop issue: The internal efficiency decreases during high current injection. The efficiency droop significantly affects the development of GaN-based LEDs devices in efficiency and light-output areas. Therefore, the improvement of the droop phenomenon has become a significant topic. This paper introduces several possible mechanisms of droop phenomenon based on different hypotheses including Auger Recombination, Carrier Delocalization and Electron Leakage. Furthermore, some proposals to mitigate efficiency droop, including semipolar LEDs, electron blocking layer(EBL), quaternary alloy and chip design will be discussed and analyzed. Also, it will provide some suggestions for the further optimization of droop phenomenon in each proposal.
关键词： electron blocking layer,semipolar LEDs,GaN-based LEDs,Auger Recombination,chip design,quaternary alloy,Carrier Delocalization,Electron Leakage,efficiency droop
更新于2025-09-23 15:21:01
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Characterization of CuInSTe/CdS Heterojunctions
摘要： In this work, the role of substrate temperature in the range (293-423)K on the structure and microstructure of CuInSTe thin films was investigated. The results showed that the structure was amorphous for films prepared at ambient temperature Ts=293Kwhile it was polycrystalline for films prepared at high temperature. The grain size and roughness increased with increasing substrate temperature. The frequency and temperature dependencies upon AC conductivity were investigated in the frequency range 100Hz-10MHz and temperature of heat treatment in the range of 303-453K. The AC activation energy was found to increase from 0.1132 to 0.1258 eV with increasing substrate temperature from 293 to 423K and decrease to 0.0962 eV with increasing frequency from 100 to 107 Hz. The exponents show a nonsystematic sequence with the increment of substrate temperature. The obtained results gave indication t hat there is a relation between the structure and preparation temperature as well as heat treatment. According to the current-voltage characteristic, the CuInSTe/CdS heterojunction prepared at substrate temperature of 423K showed the best electrical characteristics under illumination conditions.
关键词： Activation energy,Heterojunction,quaternary alloy CuInSTe,dielectric properties,Thin films
更新于2025-09-10 09:29:36