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Optimization of thin n-in-p planar pixel modules for the ATLAS upgrade at HL-LHC
摘要： The ATLAS experiment will undergo around the year 2025 a replacement of the tracker system in view of the high luminosity phase of the LHC (HL-LHC) with a new 5-layer pixel system. Thin planar pixel sensors are promising candidates to instrument the innermost region of the new pixel system, thanks to the reduced contribution to the material budget and their high charge collection efficiency after irradiation. The sensors of 50-150 μm thickness, interconnected to FE-I4 read-out chips, have been characterized with radioactive sources and beam tests. In particular active edge sensors have been investigated. The performance of two different versions of edge designs are compared: the first with a bias ring, and the second one where only a floating guard ring has been implemented. The hit efficiency at the edge has also been studied after irradiation at a fluence of 1015 neq/cm2. Highly segmented sensors will represent a challenge for the tracking in the forward region of the pixel system at HL-LHC. In order to reproduce the performance of 50x50 μm2 pixels at high pseudo-rapidity values, FE-I4 compatible planar pixel sensors have been studied before and after irradiation in beam tests at high incidence angles with respect to the short pixel direction. Results on the hit efficiency in this configuration are discussed for different sensor thicknesses.
关键词： Hybrid detectors,Radiation-hard detectors,Particle tracking detectors
更新于2025-09-23 15:23:52
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
摘要： HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the 4th generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between 1 × 10^14 and 5 × 10^15 1-MeV- neq/cm^2. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of 85 V. The sample irradiated to a fluence of 1 × 10^15 neq/cm^2 — a relevant value for a large volume of the upgraded tracker — exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
关键词： Particle tracking detectors (Solid-state detectors),Solid state detectors,Radiation-hard detectors,Electronic detector readout concepts (solid-state)
更新于2025-09-23 15:23:52
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Testbeam and laboratory characterization of CMS 3D pixel sensors
摘要： The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected at the High-Luminosity LHC (HL-LHC). As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements of CMS 3D pixel sensors with different electrode configurations from different vendors. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties of silicon sensors, such as MOS capacitors, planar and gate-controlled diodes are also presented.
关键词： Radiation-hard detectors,Si microstrip and pad detectors
更新于2025-09-23 15:22:29
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Lab and test beam results of irradiated silicon sensors with modified ATLAS pixel implantations
摘要： In Dortmund, planar silicon pixel sensors were designed with modified n+-implantations and produced in n+-in-n sensor technology. Baseline for these new designs was the layout of the IBL planar silicon pixel sensor with a 250 μm × 50 μm pitch. The different implantation shapes are intended to cause electrical field strength maxima to increase charge collection after irradiation and thus increase particle detection efficiency. To test and compare the different pixel designs, the modified pixel designs and the standard IBL design are placed on one sensor which can be read out by a FE-I4. After irradiation with protons and neutrons respectively the performance of several sensors is tested in laboratory and test beam measurements. The presented laboratory results verify that all sensors are fully functional after irradiation. The the test beam measurements show different results for sensors irradiated to the same fluence with neutrons in Sandia compared to sensors irradiated with neutrons in Ljubljana or with protons at CERN PS.
关键词： Particle tracking detectors (Solid-state detectors),Radiation-hard detectors,Particle tracking detectors,Solid state detectors
更新于2025-09-23 15:21:21
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Characteristics of Si and SiC detectors at registration of Xe ions
摘要： The results of an investigation of silicon (Si) and silicon carbide (SiC) detectors when irradiated with a beam of Xenon (Xe) ions are presented. The irradiation was carried out at the IC-100 cyclotron, JINR, Dubna. The effect of the Pulse Height Defect (PHD) in registering Xe ions with energies 165, 82 and 45 MeV is shown to be twice as large for SiC detectors as that for Si detectors. It is also shown that degradation of SiC detectors irradiated with heavy Xe ions occurs at doses an order of magnitude greater than for Si detectors. The measurement method described, including continuous detector calibration by alpha-particles, makes it possible to simultaneously control the characteristics of detectors during irradiation and determine the energy of a beam of ions.
关键词： Radiation-hard detectors,Heavy-ion detectors,Solid state detectors,Gamma detectors (scintillators, CZT, HPG, HgI etc)
更新于2025-09-23 15:19:57
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Radiation Tolerant Nanowire Array Solar Cells
摘要： Space power systems require photovoltaics that are lightweight, efficient, reliable, and capable of operating for years or decades in space environment. Current solar panels use planar multijunction, III-V based solar cells with very high efficiency, but their specific power (power to weight ratio) is limited by the added mass of radiation shielding (e.g. coverglass) required to protect the cells from the high-energy particle radiation that occurs in space. Here we demonstrate that III-V nanowire-array solar cells have dramatically superior radiation performance relative to planar solar cell designs and show this for multiple cell geometries and materials, including GaAs and InP. Nanowire cells exhibit damage thresholds ranging from ~10-40 times higher than planar control solar cells when subjected to irradiation by 100-350 keV protons and 1 MeV electrons. Using Monte Carlo simulations, we show that this improvement is due in part to a reduction in the displacement density within the wires arising from their nanoscale dimensions. Radiation tolerance, combined with the efficient optical absorption and the improving performance of nanowire photovoltaics, indicates that nanowire arrays could provide a pathway to realize high-specific-power, substrate-free, III-V space solar cells with substantially reduced shielding requirements. More broadly, the exceptional reduction in radiation damage suggests that nanowire architectures may be useful in improving the radiation tolerance of other electronic and optoelectronic devices.
关键词： space environment,irradiation-induced defects,radiation hard,space solar cells,Monte Carlo simulations,nanowire solar cells,high specific power
更新于2025-09-11 14:15:04
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The Phase1 CMS Pixel detector upgrade
摘要： The pixel detector of the CMS experiment will be replaced in an extended end-of-year shutdown during winter 2016/2017 with an upgraded one able to cope with peak instantaneous luminosities beyond the nominal LHC instantaneous luminosity of 1 × 1034 cm?2 s?1. Under the conditions expected in the coming years, which will see an increase of a factor two in instantaneous luminosity, the present system would experience a dynamic ine?ciency caused mainly by data losses due to bu?er over?ows. The Phase I upgrade of the CMS pixel detector, described in this paper, will operate at full e?ciency at an instantaneous luminosity of 2 × 1034 cm?2 s?1 and beyond, thanks to a new readout chip. The new detector will feature one additional tracking point both in the barrel and in the forward regions, while reducing the material budget as a result of a new CO2 cooling system and optimised layout of the services. In this paper, the design and the technological choices of the Phase I detector will be reviewed and the status of the construction of the detector and the performance of its components will be discussed.
关键词： Particle tracking detectors,Radiation-hard detectors,Performance of High Energy Physics Detectors,Si microstrip and pad detectors
更新于2025-09-04 15:30:14