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- 实验方案
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Radiation tolerance characterization of Geiger-mode CMOS avalanche diodes for a dual-layer particle detector
摘要： An array of Single Photon Avalanche Diodes (SPAD), fabricated in a 180 nm CMOS technology featuring a high voltage (HV) option, has been investigated in terms of radiation tolerance, in view of the design of low material budget dual-tier detectors for charged particle tracking based on the coincidence of signals coming from pairs of vertically aligned pixels. Each pixel in the array includes both the processing electronics and the sensing element in a monolithic structure. The test vehicles were irradiated with 10 keV X-rays up to a dose of 1 Mrad (SiO2) and with neutrons up to a fluence of 1011 n_eq cm?2. A selection of the characterization results are presented together with the main features of a new large scale SPAD array to be fabricated in a 150 nm CMOS technology and ready for vertical interconnection in a dual layer structure.
关键词： Pixelated sensor,CMOS,Single Photon Avalanche Diode,Radiation tolerance,Tracking detectors
更新于2025-09-23 15:22:29
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Operation of field emitter arrays under high dose rate gamma-ray irradiation
摘要： Robustness of field emitter arrays (FEA) against high dose rate gamma-ray irradiation was confirmed. The current-voltage characteristics of the FEA were investigated in a vacuum vessel developed for in situ measurements under the irradiation. Although slight increase of the gate current was observed under the irradiation, the insulating layer kept the electrical insulation. As a result, FEA showed the almost identical current-voltage characteristics under the 1.3 kGy h-1 gamma-ray irradiation.
关键词： gamma-ray,image sensor,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Gamma-Ray Irradiation Effects of CdS/CdTe Photodiode for Radiation Tolerant FEA Image Sensor
摘要： The influences of gamma irradiation on CdS/CdTe photodiodes were investigated in order to evaluate their potential for applications to the radiation tolerant field emitter array (FEA) image sensor. It was found that the CdS/CdTe photodiodes have sufficient tolerance to high gamma-ray exposure more than 2 MGy. Furthermore, I-V characteristics of CdS/CdTe photodiodes under gamma-ray irradiation were investigated. In the CdTe thickness of 6.5 ?m, the change rate of current density increased with increase in the reverse bias voltage. On the other hand, in the case of 2.2 ?m, the change rate of current density was almost constant irrespective of the reverse bias voltage. These results suggest that the increase in depletion layer width affects the change rate of current density.
关键词： image sensor,cadmium telluride,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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Radiation effects on the performance of flexible perovskite solar cells for space applications
摘要： Solar cells for space applications are required to be tolerant to harsh environmental conditions. Especially, tolerance against radiation and charged particles is mandatory. Here we study the effect of low-energy (<< 1 MeV) proton radiation to evaluate the radiation tolerance of flexible perovskite solar cells (PSCs). Low-energy protons are more likely to be stopped in the shallower regions of solar cells, thereby causing greater performance degradation than high-energy protons. Flexible PSCs with layer sequence PET/ITO/PEDOT:PSS/perovskite/PCBM/BCP/metal were fabricated and were irradiated with 100 keV protons (fluence from ~ 3 × 1010 to ~ 3 × 1012 protons/cm2, equating several years in space). Flexible PSCs exhibited a good radiation tolerance and did not show color center formation, revealing their outstanding resistance against low-energy proton radiation. This can be credited to the combined effect of intrinsically large carrier diffusion length exceeding the thin absorber film thickness and the defect tolerance of perovskite crystals.
关键词： defect tolerance,space applications,radiation tolerance,low-energy proton radiation,flexible perovskite solar cells
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Improved Photoabsorption in Thin Gallium Arsenide Solar Cells using Light Trapping Techniques
摘要： Thin absorbers for space photovoltaics can achieve higher radiation tolerance, however, they suffer from reduced photoabsorption as the active region is thinned. In this work, increasing the photoabsorption in thin single junction n-i-p GaAs solar cells have been investigated by applying different light trapping structures at the rear of the cell. The main focus has been to develop a random surface texture that varies in three dimensions to increase light scattering and the effective optical path length. From the EQE, the random back surface reflector was successfully applied to a 1.1 μm thick GaAs solar cell which resulted in a notable 38% increase in current output, when compared to the GaAs baseline cell on its substrate without a BSR. The random texture has shown the capability to maintain the current output in the 1.1 μm thick GaAs absorber and shows promise for enhancing the photoabsorption in thin GaAs absorbers that approach the sub-μm thickness regime.
关键词： photoabsorption,thin GaAs solar cells,light trapping,random maskless texture,radiation tolerance
更新于2025-09-16 10:30:52
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[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Design of a radiation-tolerant high-speed driver for Mach Zender Modulators in High Energy Physics
摘要： This paper presents the integrated circuit design, targeting a CMOS 65 nm 1.2 V technology, of a high-speed driver that provides the differential input signals to a Mach Zender Modulator (MZM), and allows tuning of the MZM operating point through adjustment of the bias voltage. A multi-voltage isolated domain circuit through deep n-well trenches, to face the high voltage swing and the bias regulation requirements of the MZM. The MZM device, whose prototype has been implemented in silicon photonics iSiPP50G technology, is emerging as a promising solution for radiation tolerant, several hundreds of Mrad, and high-speed, in the range of 10 Gbps, optical links. These stringent requirements are needed in high energy physics experiments in the upgrade of the Large Hadron Collider or in future Linear Colliders.
关键词： High-speed CMOS driver,Mach-Zender Modulator driving circuit,Radiation tolerance,High energy physics
更新于2025-09-11 14:15:04