研究目的
To study the radiation tolerance of a SPAD array designed in a 180 nm CMOS process for use in dual-layer particle detectors for charged particle tracking.
研究成果
The SPAD array in 180 nm CMOS showed no substantial change in breakdown voltage after irradiation but a significant increase in dark count rate, especially with neutron exposure. Based on these results, a new chip in 150 nm CMOS was designed for vertical integration in dual-layer detectors, featuring improved fill factor and readout architectures. The research supports the feasibility of using SPAD-based detectors in high-radiation environments for particle tracking.
研究不足
The study is limited to specific radiation doses and fluences (1 Mrad X-rays, up to 1011 n/cm2 neutrons). The technology nodes are 180 nm and 150 nm CMOS, which may not represent all advanced processes. Annealing effects and temperature dependencies were partially explored but could be optimized further. The focus is on SPAD arrays, and results may not generalize to other detector types.
1：Experimental Design and Method Selection:
The study involved irradiating SPAD arrays with ionizing (X-rays) and non-ionizing (neutrons) radiation to assess tolerance. Theoretical models for radiation effects on semiconductors were employed.
2：Sample Selection and Data Sources:
Test chips with SPAD arrays fabricated in 180 nm CMOS technology were used. Samples were irradiated at specific facilities.
3：List of Experimental Equipment and Materials:
SPAD arrays, 10 keV X-ray source, neutron source, annealing equipment, temperature control setup.
4：Experimental Procedures and Operational Workflow:
Chips were irradiated with X-rays up to 1 Mrad (SiO2) and neutrons up to 1011 n/cm2 fluence. Annealing at 60°C for 80 minutes was applied. Dark count rate (DCR) and breakdown voltage were measured before and after irradiation. Temperature tests were conducted.
5：Data Analysis Methods:
DCR and breakdown voltage data were analyzed statistically to observe changes post-irradiation. Comparisons were made between different sensor sizes and irradiation types.
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