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Correlation between the morphology and the opto-electronic and electrical properties of organometallic halide perovskite (CH<sub>3</sub>NH<sub>3</sub>MH<sub>3</sub>) thin films
摘要： Organometallic halide perovskites are emerging as a promising class of materials for optoelectronic applications. Crystal morphology is important for improving the organic-inorganic lead halide perovskite semiconductor property in optoelectronic, electrical and photovoltaic devices. It is thus important to investigate how the changes in crystal morphology affect the semiconductor behavior. This work presents a study that was carried out to assess the relationship between different deposition methodologies and the opto-electronic and electrical properties of the resultant organometallic halide perovskite thin films. Herein, single step solution deposition method and two step solution deposition methods have been used to deposit perovskite thin films. The structure and morphology of perovskite was controlled by changing concentration, annealing temperatures and dip coating times. From the study, prepared films showed different morphologies as the concentration, annealing temperatures and dip coating times were varied. Optical band gap energies of 2.23 eV, 2.13 eV and 2.09 eV were obtained for samples prepared by single step solution deposition method and 1.57 eV, 1.55 eV and 1.52 eV for two step solution deposition method. The sheet resistance values decreased with an increase in concentration, annealing temperatures and dip coating times. The decrease in optical band gap energy and sheet resistances are excellent properties for high performance photovoltaic devices.
关键词： Perovskite,sheet resistivity,activation energy,band gap,sheet resistance,spectroscopy
更新于2025-11-19 16:56:35
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Ellipsometric study on optical properties of hydrogen plasma-treated aluminum-doped ZnO thin film
摘要： Aluminum-doped zinc oxide (AZO) thin films were prepared by radio frequency (RF) sputtering at room temperature, and then post-treated by hydrogen (H2) plasma at different durations. After H2 plasma treatment under the condition of 10 W, 200 °C and 3.0 Hours, the resistivity showed a dramatically decrease from 1.6 Ω cm to 3.4 × 10?3 Ω cm, while the transmittance at the wavelength of 550 nm was improved from 90.5% to 96.0%. The optical constants of H2 plasma-treated AZO thin films were detailed characterized by a varied angle spectroscopic ellipsometer. The results show that the refractive index n decreases in the entire measured wavelength range of 350–1100 nm, while the extinction coefficient k decreases in the short wavelength range and changes negligibly at the long wavelength range. These results can provide guidelines for the design and optimization of AZO thin film-based optoelectronic applications.
关键词： Resistivity,Spectroscopic ellipsometer,Transmittance,Optical constants,Hydrogen plasma treatment,Aluminum-doped zinc oxide
更新于2025-11-14 17:03:37
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Atomistic modeling of resistivity evolution of copper nanoparticle in intense pulsed light sintering process
摘要： In this work, the intense pulsed light (IPL) sintering process of copper nanoparticle ink is simulated using molecular dynamics (MD) method. First, the neck size growth between the two copper nanoparticles during the IPL sintering process is computed. The resultant electrical resistivity is then calculated by substituting the neck size into the Reimann-Weber formula. Overall, a rapid decrease of electric resistivity is observed in the beginning of the sintering, which is caused by quick neck size growth, followed by a gradually decrease of resistivity. In addition, the correlation of the simulated temperature dependent resistivity is similar to that of the experimentally measured resistivity. The MD model is an effective tool for designers to optimize the IPL sintering process.
关键词： Molecular dynamics,Nanoparticle,Electrical resistivity,Intense pulsed light,Copper
更新于2025-09-23 15:23:52
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Simultaneous optimization of transmittance and resistivity for γ-CuI thin films via an iodination method at mild reaction condition
摘要： In p-type γ-CuI thin films synthesized by the iodination of Cu layers with iodine vapor, a frosted-glass-like appearance with a rough surface is usually obtained, which makes it difficult to apply the γ-CuI films to transparent electronics. This paper proposes an innovative method for the preparation of highly transparent p-type γ-CuI films. A chemical reaction between Cu thin films and iodine vapor, combined with the layer-by-layer process at a temperature between room temperature and 120°C are found to result in highly transparent polycrystalline γ-CuI films. The root-mean-square roughness values of the γ-CuI films prepared by this method are 8.5–21.2 nm, which are smaller than those for the γ- CuI films synthesized by the conventional method. The microstructure and optoelectronic properties of the γ-CuI thin films are sensitive to the temperature of iodine vapor. A high transmittance (80%) of the film obtained at an iodine vapor temperature of 80°C has a low resistivity of 5×10?2 Ω cm and high mobility of 8.7 cm2/Vs. Moreover, a boosted figure of merit is realized due to the simultaneously low resistivity and high transparency: its value jumps from ～488 to ～1630 MΩ-1.
关键词： figure of merit,low resistivity,high transmittance,layer by layer method
更新于2025-09-23 15:23:52
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Characteristics of Vanadium Oxide Thin Films Fabricated by Unbalanced Magnetron Sputtering for Smart Window Application
摘要： Vanadium oxide (VOx) thin films were deposited by an unbalanced magnetron (UBM) sputtering system with a vanadium metal target and O2 reaction gas, and thermally treated at various annealing temperatures. In this work, the structural, electrical, and optical properties of the fabricated VOx films with various annealing temperatures were experimentally investigated. The UBM sputter grown VOx thin films exhibited amorphous structure, and had a very weak peak of V2O5 (002) owing to very thin films. However, the crystallite size of VOx films increased with increasing annealing temperature. The surface roughness of VOx films and average transmittance decreased with increasing annealing temperature. The resistivity of VOx films also decreased with increasing annealing temperature, while the electrical properties of films improved.
关键词： Transmittance,Unbalanced Magnetron Sputtering,Vanadium Oxide,Surface Roughness,Resistivity
更新于2025-09-23 15:23:52
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An Electrical Analysis of a Metal-Interlayer-Semiconductor Structure on High-Quality Si <sub/> 1? <i>x</i> </sub> Ge <sub/><i>x</i> </sub> Films for Non-Alloyed Ohmic Contact
摘要： In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1?xGex contact region by preventing penetration into the Si1?xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1?xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1?xGex film with various levels of germanium (Ge) concentration. The case of Si0.7Ge0.3 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si0.7Ge0.3 structure is reduced 80-fold compared to that of a Ti/Si0.7Ge0.3 structure. The effect of the MIS structure has been well demonstrated on Si1?xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1?xGex complementary metal-oxide-semiconductor (CMOS) technology.
关键词： Epitaxial Growth,Metal-Interlayer-Semiconductor,Source/Drain Contact,Silicon-Germanium,Fermi-Level Pinning,Specific Contact Resistivity
更新于2025-09-23 15:22:29
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PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
摘要： In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500°C for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10?8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.
关键词： contact resistivity,PdEr-alloy target,RF magnetron sputtering,schottky barrier height,silicide
更新于2025-09-23 15:22:29
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Transparent Conductive Materials (Materials, Synthesis, Characterization, Applications) || Characterizations of Electrical Properties by the van der Pauw Method
摘要： The van der Pauw method is one of the most utilized techniques for measuring electrical properties of various materials, and it is also effective for characterizations of the transparent conductive materials. The method was developed by van der Pauw for measuring resistivity and Hall effect of samples having arbitrary shapes. The samples have to be flat though the shapes are arbitrary, and electrical contacts mounted on them should be sufficiently small and located at the circumference of them. In addition, the samples should not have isolated holes in them.
关键词： van der Pauw method,resistivity,electrical properties,Hall effect,transparent conductive materials
更新于2025-09-23 15:21:21
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[IEEE 2018 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2018.6.18-2018.6.22)] 2018 IEEE Symposium on VLSI Technology - Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10 <sup>?10</sup> Ω-cm <sup>2</sup>
摘要： Ga and Sn surface-segregated p+-GeSn (Seg. p+-GeSn) was grown by molecular beam epitaxy (MBE) to achieve an average active Ga doping concentration of 3.4×1020 cm-3 and surface Sn composition of more than 8%. This enables the realization of record-low specific contact resistivity ρc down to 4.4×10-10 ?-cm2. The average ρc extracted from 14 sets of Ti/Seg. p+-GeSn Nano-TLM test structures, a collection of more than 90 devices is 6.5×10-10 ?-cm2. This is also the lowest ρc for non-laser-annealed contacts. Ti contacts to p+-GeSn films with and without Ga and Sn surface segregation were fabricated. It is shown that the segregation of Ga and Sn at the Ti/p+-GeSn interface leads to 50% reduction in ρc as compared with a sample without segregation.
关键词： Ga and Sn surface-segregated p+-GeSn,molecular beam epitaxy,specific contact resistivity,Nano-TLM test structures
更新于2025-09-23 15:21:21
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Macroscopic effects and microscopic origins of gamma-ray irradiation on In-doped CdZnTe crystal
摘要： The effects of gamma-ray irradiation, exposed to a 60Co source with a dose of 2.7 kGy, on In-doped CdZnTe (CdZnTe:In) crystal were investigated. We combined the “macroscopic” electrical properties of CdZnTe:In sample, evaluated by current–voltage (I–V) measurements at different temperature, with the “microscopic” origins of electrically active defects induced by gamma-irradiation, characterized by thermally stimulated current spectroscopy. It reveals that the bulk resistivity at room temperature have increased from 2.7 × 109 ? cm for the as-grown CdZnTe:In sample to 5.9 × 109 ? cm for the irradiated sample. Since the microscopic origins of these macroscopic effects are linked to the electrically active defects within the material, five main defect states (I, II, III, IV and V) were characterized and identified in the CdZnTe:In crystal. In particular, the introduction of gamma-irradiation altered the trap concentrations of these defect states, such as the rapidly decreasing concentration of region I. Besides, the gamma-ray irradiation caused a further deepening of EDD level (region V) from the value of 0.717 ± 0.004 eV for the as-grown sample to the value of 0.749 ± 0.004 eV for the irradiated sample. The microscopic origin of EDD level was identified with TeCd2+ below the conduction band minimum, which is responsible for the pinning of EF level near the mid-gap, and thus for the observed high-resistivity performance of CdZnTe:In.
关键词： high-resistivity,electrical properties,defect states,gamma-ray irradiation,CdZnTe:In
更新于2025-09-23 15:21:21