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Self-assembled indium nanostructures formation on InSe (0001) surface
摘要： The surfaces of 2D layered crystals are one among most perspective templates for self-assembling of metal nanostructures due to the dewetting. The initial InSe (0001) surface as topological template was characterized by means of scanning tunneling microscopy/spectroscopy (STM/STS) and low electron energy diffraction. InSe (0001) surface used in the process of formation of nanostructures found to be a template covered with array of triangular-shaped cites. The results of STM/STS studies on the formation of indium nanostructures on (0001) surface of InSe layered semiconductor crystal are presented. Indium was thermally deposited on structurally perfect InSe crystal cleavages obtained in situ. Geometrically heterogeneous (in height) initial (0001) InSe surface is used to activate the dewetting phenomenon in a manner that leads to the formation of 0D triangular-shaped nucleus of deposited indium nanostructures. STS acquired spatially averaged I–V curves changes their dependence from semiconductor one to almost metallic due to dewetting process. Moreover, the spatial arrangement of formed indium nanostructures is powered by hexagonal lattice symmetry of InSe surface on macroscale.
关键词： Hetero nanostructures,Nanostructures template-directed assembly,Layered crystals,Scanning tunneling microscopy/spectroscopy,Indium selenide,Low energy electron diffraction
更新于2025-09-23 15:21:01
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Manipulating Optical Absorption of Indium Selenide Using Plasmonic Nanoparticles
摘要： In this work, we propose using periodic Au nanoparticles (NPs) in indium selenide-based optoelectronic devices to tune the optical absorption of indium selenide. Electromagnetic simulations show that optical absorption of indium selenide can be manipulated by tuning plasmonic resonance. The e?ect on the plasmonic resonance of the size, period of NPs, the thickness of silicon oxide, and the insulator spacer is systematically analyzed. A high absorption enhancement over the visible spectrum is achieved through systematic optimization of nanostructures.
关键词： optoelectronic devices,indium selenide,optical absorption,plasmonic nanoparticles,plasmonic resonance
更新于2025-09-23 15:21:01
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P-type laser-doped WSe <sub/>2</sub> /MoTe <sub/>2</sub> van der Waals heterostructure photodetector
摘要： Van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials are being studied extensively for their prospective applications in photodetectors. As the pristine WSe2/MoTe2 heterostructure is a type I (straddling gap) structure, it cannot be used as a photovoltaic device theoretically, although both WSe2 and MoTe2 have excellent photoelectric properties. The Fermi level of p-doped WSe2 is close to its valence band. The p-doped WSe2/MoTe2 heterostructure can perform as a photovoltaic device because a built-in electric field appears at the interface between MoTe2 and p-doped WSe2. Here, a 633 nm laser was used for scanning the surface of WSe2 in order to obtain the p-doped WSe2. X-ray photoelectron spectroscopy (XPS) and electrical measurements verified that p-type doping in WSe2 is produced through laser treatment. The p-type doping in WSe2 includes substoichiometric WOx and nonstoichiometric WSex. A photovoltaic device using p-doped WSe2 and MoTe2 was successfully fabricated. The band structure, light-matter reactions, and carrier-transport in the p-doped WSe2/MoTe2 heterojunction were analyzed. The results showed that this photodetector has an on/off ratio of ≈104, dark current of ≈1 pA, and response time of 72 μs under the illumination of 633 nm laser at zero bias (Vds = 0 V). The proposed p-doping method may provide a new approach to improve the performance of nanoscale optoelectronic devices.
关键词： molybdenum ditelluride,heterojunction,tungsten selenide,photodetector,p-doped
更新于2025-09-23 15:21:01
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Thermochromism from Ultrathin Colloidal Sb <sub/>2</sub> Se <sub/>3</sub> Nanowires Undergoing Reversible Growth and Dissolution in an Amine-Thiol Mixture
摘要： Thermochromism from Ultrathin Colloidal Sb2Se3 Nanowires Undergoing Reversible Growth and Dissolution in an Amine–Thiol Mixture. Liquid-based thermochromics can be incorporated into an arbitrarily shaped container and provide a visual map of the temperature changes within its volume. However, photochemical degradation, narrow temperature range of operation, and the need for stringent encapsulation processes are challenges that can limit their widespread use. Here, a unique solution-based thermochromic comprising ultrathin colloidal Sb2Se3 nanowires in an amine–thiol mixture is introduced. The nanowires undergo reversible growth and dissolution with repeated cycles of heating and cooling between 20 and 160 °C, exhibiting intense and contrasting color changes during these processes. Furthermore, the transition temperature in which a change in color first appears can be continuously tuned over a range larger than 100 °C by introducing controlled amounts of Sn2+. The colloidal nanowire dispersion in the amine–thiol mixture retains its thermochromic properties over hundreds of temperature cycles, continuous heating at 80 °C over months, and shelf life of up to 2 years in an open container under ambient conditions. To illustrate its utility as a robust liquid thermochromic, the nanowire solution is coated onto standard filter paper and its uses as a rewritable surface by thermal scribing, as well as an inexpensive means of visualizing the temperature distribution of an anisotropically heated block are demonstrated.
关键词： tin-doped antimony selenide,colloidal nanowires,thermochromic materials,liquid-based,reversible growth and dissolution
更新于2025-09-23 15:21:01
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A Synergy of Strain Loading and Laser Radiation in Determining the High-Performing Electrical Transports in the Single Cu-Doped SnSe Microbelt
摘要： Semiconducting microbelts are key components of the thermoelectric micro-devices, and their electrical transport properties play significant roles in determining the thermoelectric performance. Here, we report heavily Cu-doped single-crystal SnSe microbelts as potential candidates employed in thermoelectric micro-devices, fabricated by a facile solvothermal route. The considerable Cu-doping concentration of ~11.8 % up to the solubility contributes to a high electrical conductivity of ~416.6 S m-1 at room temperature, improved by one order of magnitude compared with pure SnSe (38.0 S m-1). Meanwhile, after loading ~1 % compressive strain and laser radiation, the electrical conductivity can be further improved to ~601.9 S m-1 and ~589.2 S m-1, respectively, indicating great potentials for applying to thermoelectric micro-devices. Comprehensive structural and compositional characterizations indicate that the Cu+ doping state provides more hole carriers into the system, contributing to the outstanding electrical conductivity. Calculations based on first-principle density functional theory reveal that the heavily doped Cu lowers the Fermi level down into the valence bands, generating holes, and the 1 % strain can further reduce the bandgap, strengthening the ability to release holes, and, in turn, leading to such an excellent electrical transport performance. This study fills the gaps of finding novel materials as potential candidates employed in the thermoelectric micro-devices and provides new ideas for micro/nanoscale thermoelectric material design.
关键词： Cu-doping,tin selenide,electrical transport performance,laser radiation,strain loading
更新于2025-09-23 15:19:57
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Fabrication of flexible and bifacial Cu(In,Ga)Se2 solar cell with superstrate-type structure using a lift-off process
摘要： Flexible and bifacial Cu(In,Ga)Se2 (CIGS) solar cell with superstrate-type structure utilizing ethylene tetra-fluoroethylene (ETFE) was fabricated by a lift-off process. The advantages of the lift-off process performed under low temperature (below 100 °C) are to allow to deposit the CIGS layer under high temperature and to use ETFE as superstrate. The superstrate-type structure consists of ETFE/epoxy glue/ZnO:Al (AZO)/ZnO/CdS/CIGS/back contact, where the bilayer of ultra-thin 5-nm-thick Au/400-nm-thick AZO was used as the back contact. The optical and electrical properties of the bilayer of ultra-thin Au/400-nm-thick AZO were examined for the suitable back contact. It is determined that the transmittance of the bilayer of the ultra-thin 5-nm-thick Au/AZO is reasonably suitable in view of optical property. The ohmic-like characteristic at the CIGS/ultra-thin 5-nm-thick Au/AZO interface is attained. Consequently, the flexible and bifacial CIGS solar cell is realized by a lift-off process with conversion efficiency values of 6.2% for the frontside illumination and 0.9% for the backside illumination.
关键词： ETFE film,Superstrate-type structure,Flexible and bifacial solar cell,Copper indium gallium selenide,Lift-off process
更新于2025-09-23 15:19:57
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Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors
摘要： Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness-dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin-film field effect transistors and phototransistors due to its high intrinsic mobility (>102 cm2 V?1 s?1) and the direct optical transitions in an energy range suitable for visible and near-infrared light detection. A key requirement for the exploitation of large-scale (opto)electronic applications relies on the development of low-cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high-throughput device fabrication methods. Here, a β polymorph of indium selenide (β-InSe) is exfoliated in isopropanol and spray-coated InSe-based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W?1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate-dependent conduction with an n-channel transistor behavior. Overall, this study establishes that liquid phase exfoliated β-InSe is a valid candidate for printed high-performance photodetectors, which is critical for the development of industrial-scale 2D material-based optoelectronic devices.
关键词： photodetectors,2D semiconductors,indium selenide,field effect transistors,liquid phase exfoliation,spray coating,solution processed
更新于2025-09-23 15:19:57
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Effective shape-controlled synthesis of gallium selenide nanosheets by vapor phase deposition
摘要： The controlled synthesis of large and uniform gallium selenide (GaSe) crystals is crucial for its various applications based on the attractive properties of this emerging material. In this work, vapor phase growth of high-quality monolayer GaSe nanosheets with multiple shape and size is achieved by tuning the Ga/GaSe ratio in the precursor. A theoretical model based on density functional theory calculations and kinetic Wulff construction theory describe the observed shape evolution of the GaSe nanosheets. Results show that the Ga/Se ratio plays a critical role in the evolution of the domain shape and size. Moreover, the as-grown GaSe nanosheets show improved performance with photoresponse time less than 0.7 ms and responsibility up to 3,000 A/W. This study presents a previously unexplored strategy for the controlled growth of two-dimensional (2D) GaSe nanosheets for promising applications in next-generation optoelectronics.
关键词： shape-evolution,gallium selenide,photodetector,growth dynamics,controllable growth
更新于2025-09-23 15:19:57
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Numerical simulation of PbSe quantum dots doped fiber ring laser with 1.7 <i>?μ</i> m wavelength
摘要： A lead selenide quantum dot-doped fiber ring laser operating at 1.7 μm wavelength is proposed and investigated by numerical simulation for the first time. Its temporal and spectral characteristics under different simulation parameters are presented. The fact that the obtained temporal profiles using different simulation parameters are largely different is observed and analyzed. These results offer us a new practical path to generate a 1.7 μm continuous-wave and pulsed laser for deep biomedical application.
关键词： fibre laser,1.7 μm wavelength,lead selenide (PbSe) quantum dot
更新于2025-09-23 15:19:57
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All Antimony Chalcogenide Tandem Solar Cell
摘要： We demonstrate a proof-of-concept tandem solar cell using Sb2S3 and Sb2Se3 as top and bottom cell absorber materials. The band gaps of Sb2S3 and Sb2Se3 are 1.74 and 1.22 eV, perfectly satisfying the requirement of tandem solar cells. The application of few-layer graphene enables high transmittance and excellent interfacial contact in the top sub-cell. By controlling the thickness of the top cell for maximizing the spectral application, the tandem device delivers a power conversion efficiency of the 7.93%, which outperforms the individually optimized top cell (5.58%) and bottom cell (6.50%). Mechanistical investigation shows that the tandem device is able to make up voltage loss in the sub-cells, which is a critical concern in the current antimony chalcogenide solar cells. This study provides an alternative approach to enhancing the energy conversion efficiency of antimony selenosulfide.
关键词： antimony sulfide,energy conversion,semi-transparent electrode,tandem solar cell,antimony selenide
更新于2025-09-23 15:19:57