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Electron Versus Hole Extraction: Self Doping Induced Performance Bottleneck in Perovskite Solar Cells
摘要： Efficient and balanced collection of photo-generated charge carriers is a fundamental requirement for high efficiency solar cells – including perovskites. Any process or bias induced asymmetry in carrier collection leads to degradation in efficiency. Here, for the first time, we show that process induced self-doping in the perovskite active layer could result in asymmetric carrier collection. Accordingly, interface quality at the majority carrier collection layer becomes the performance limiting factor in perovskite solar cells. Through detailed numerical simulations we identify optimization schemes to overcome the ill-effects due to self-doping and interface recombination. Further, the insights on asymmetric carrier collection has interesting implications on regular vs. inverted geometry and long term stability of perovskite solar cells – which could be of broad interest to the community.
关键词： Semiconductor device modeling,photovoltaic cells.
更新于2025-09-12 10:27:22
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Impact of Proton and Electron Irradiation-Induced Defects on the Dark Current of GaAs Solar Cells
摘要： The same amount of non-ionizing energy is deposited in GaAs solar cells through 1 MeV proton and electron radiation at specific fluence values. The defects created are detected and characterized via temperature-dependent dark I–V analysis, and the energy levels are correlated to trap states observed via admittance spectroscopy. A remarkable difference is observed between the defect energy levels introduced in the proton and electron cases: in the former, the recombination centers lie around the mid-gap position, while in the latter they are spread over a wider energy range in the band-gap. This induces a profound difference in the degradation of the recombination current in the space-charge region. On the other hand, the degradation of the diffusion current in the neutral regions is found to be determined by the recombination velocities at the back and front hetero-interfaces of the solar cell. They depend only on the displacement damage dose and are independent of the particle type.
关键词： recombination current,semiconductor device modeling,surface recombination,Displacement damage,irradiation-induced defect,GaAs solar cell
更新于2025-09-12 10:27:22
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A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study
摘要： Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction TFET. The CS TFET “line-tunneling” current increases significantly with the core diameter dC and outperforms the best III-V axial “point-tunneling” NW heterojunction TFET ION by up to 6× for dC = 6.6 nm. Reaching such a high level of current at low supply voltage, however, requires and involves specific and sometime unanticipated optimizations and physics that are thoroughly investigated here. In spite of the commonly accepted view, we also show and explain the weak gate-length dependency observed for the line-tunneling current in a III-V TFET. We further investigate the effect of electron-phonon scattering and discrete dopant impurity band tails on optimized CS NW TFETs. Including those non-idealities, the CS-TFET inverter performance significantly outperforms that of the axial TFETs. The low-power (LP) VDD = 0.35V CS-inverter delay is comparable to that of the high-performance (HP) Si CMOS using VDD = 0.55V, which shows promise for a LP TFET technology with HP speed.
关键词： Semiconductor device modeling,Quantum effect semiconductor devices,Semiconductor heterojunctions,Tunnel transistors,Quantum wires,Quantum theory
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) - Padua (2018.6.25-2018.6.28)] 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL) - Characterization and Modeling of the Impact of the Substrate Potential in the Dynamic and Static Behavior of Power GaN-on-Si HEMTs
摘要： The maturity of GaN power transistors grown on conductive Si substrates permits today the integration of gate drivers and half bridges in a monolithic integrated chip. Among others, the back-gating effect arising from the substrate potential poses a challenge for circuit designers and hinders the development of this promising technology. In this paper, we characterize the effect of the substrate potential in the IV characteristics of a commercially available GaN power HEMT. A modified version of the ASM-HEMT compact transistor model which accounts for the effect of the substrate potential on IV and part of the CV characteristics is extracted from these measurements. Through transient simulations of the fitted transistor model, the impact of the bulk potential in the dynamic and static characteristics of power GaN-on-Si HEMTs is investigated.
关键词： substrate potential,power semiconductor device,semiconductor device modeling,Gallium Nitride,current-voltage characteristics,HEMTs
更新于2025-09-04 15:30:14
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Industrial View of III-V Devices Compact Modeling for Circuit Design
摘要： This paper presents a commercial or industrial view of III–V compact models for circuit design. We contrast the requirements of III–V modeling to those of silicon. The differences in requirements are strongly rooted in the applications that III–V devices are used in the end user of III–V models and the differences in the “ecosystems” of the technologies. These differences create both challenges and opportunity for the III–V modeling community.
关键词： semiconductor device modeling,integrated circuit modeling,HEMTs,heterojunction bipolar transistor
更新于2025-09-04 15:30:14