研究目的
Investigating the impact of proton and electron irradiation-induced defects on the dark current of GaAs solar cells, focusing on the differences in defect energy levels and their effects on recombination and diffusion currents.
研究成果
The study concludes that proton and electron irradiation introduce defects with different energy distributions in GaAs solar cells, affecting the recombination and diffusion currents differently. The degradation of the diffusion current in the neutral regions is primarily influenced by the recombination velocities at the hetero-interfaces, which depend solely on the displacement damage dose. These findings provide valuable insights for modeling solar cell performance in radiation environments.
研究不足
The study assumes symmetrical defects with equal capture cross sections for electrons and holes, which may not account for all possible defect configurations. Additionally, the accessible energy range for defect detection is limited by the temperature and frequency ranges of the measurements.
