研究目的
Investigating the impact of the substrate potential in the dynamic and static behavior of power GaN-on-Si HEMTs.
研究成果
The effect of the substrate/bulk terminal inherent in lateral GaN-on-Si power transistors has a strong influence in their static and dynamic behavior. The study reveals that negative VBS voltages require less QG to switch the transistor on but hamper its IV characteristics, while positive VBS results in a more conductive power switch but requires extra charge QG to switch the transistor on. Accurate scalable compact transistor models like the ASM-HEMT can help circuit designers foresee these effects and optimize the dimensions of the high and low side transistors for an optimized performance of the power IC.
研究不足
The study focuses on the static and dynamic behavior of power GaN-on-Si HEMTs under different substrate potentials but does not extensively cover the optimization of the transistor model for all possible substrate configurations.
