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Radially resolved electronic structure and charge carrier transport in silicon nanowires
摘要： The electronic structure of silicon nanowires is studied using density functional theory. A radially resolved density of states is discussed for different nanowire diameters and crystal orientations. This approach allows the investigation of spatially varying electronic properties in the radial direction and extends previous studies, which are usually driven by a one-dimensional band structure analysis. We demonstrate strong differences in the electronic structure between the surface and the center of the nanowire, indicating that the carrier transport will mainly take place in the center. For increasing diameters, the density of states in the center approaches the bulk density of states. We find that bulk properties, such as the indirect nature of the band gap, become significant at a nanowire diameter of approximately 5 nm and beyond. Finally, the spatial characteristic of the current is visualized in terms of transmission pathways on the atomic scale. Electron transport is found to be more localized in the nanowire center than the hole transport. It also depends on the crystal orientation of the wire. For the growing demand of silicon nanowires, for example in the field of sensors or field-effect transistors, multiple conclusions can be drawn from the present work, which we discuss towards the end of the publication.
关键词： charge carrier transport,radially resolved density of states,silicon nanowires,density functional theory,electronic structure
更新于2025-09-09 09:28:46
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Nonlinear light generation in topological nanostructures
摘要： Topological photonics has emerged as a route to robust optical circuitry protected against disorder and now includes demonstrations such as topologically protected lasing and single-photon transport. Recently, nonlinear optical topological structures have attracted special theoretical interest, as they enable tuning of topological properties by a change in the light intensity and can break optical reciprocity to realize full topological protection. However, so far, non-reciprocal topological states have only been realized using magneto-optical materials and macroscopic set-ups with external magnets, which is not feasible for nanoscale integration. Here we report the observation of a third-harmonic signal from a topologically non-trivial zigzag array of dielectric nanoparticles and the demonstration of strong enhancement of the nonlinear photon generation at the edge states of the array. The signal enhancement is due to the interaction between the Mie resonances of silicon nanoparticles and the topological localization of the electric field at the edges. The system is also robust against various perturbations and structural defects. Moreover, we show that the interplay between topology, bi-anisotropy and nonlinearity makes parametric photon generation tunable and non-reciprocal. Our study brings nonlinear topological photonics concepts to the realm of nanoscience.
关键词： Silicon nanoparticles,Nonlinear light generation,Third-harmonic signal,Mie resonances,Topological nanostructures
更新于2025-09-09 09:28:46
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Size Effects in Vibrating Silicon Crystal Microbeams
摘要： The vibrations of ultrathin silicon cantilever microbeams are studied using consistent couple-stress theory to investigate size-dependent effects. The corresponding Euler-Bernoulli beam theory is used to estimate the couple-stress length scale parameter of single crystal silicon, based on measured experimental data for the resonant frequency of cantilever microbeams. The present work demonstrates that conventional use of classical beam theories, along with rigidly clamped cantilever boundary conditions, can lead to misinterpretation of experimental data, necessitating the introduction of nonphysical size-dependent effective material properties, such as an effective Young’s modulus. Alternatively, proper modeling of the cantilever boundary conditions combined with use of couple-stress theory can account for the observed mechanical scale dependence in silicon micro- and nanostructures from fundamental principles of continuum mechanics. Moreover, the modeling approach presented here can be generalized to other micro- and nanoscale structures and materials. As such, the developed approach may be useful for the rational design of additional novel applications of such structures, ranging from optomechanical transducers to ultrasensitive biochemical sensors.
关键词： Effective material properties,Resonant nano- and microcantilever sensors,Size-dependent silicon material properties,Resonant nano- and microcantilever transducers,Nanotechnology,Resonant nano- and microcantilevers
更新于2025-09-09 09:28:46
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[IEEE 2018 7th Electronic System-Integration Technology Conference (ESTC) - Dresden, Germany (2018.9.18-2018.9.21)] 2018 7th Electronic System-Integration Technology Conference (ESTC) - Development of a Flexible Label Integrating a Silicon Bare Die
摘要： This paper presents new developments on the integration of a silicon bare die on or in a flexible layer. In the first part, the process of hybridization of a silicon test vehicle on polyethylene-naphthalate sheet will be presented and electric results will be commented. The second part presents preliminary results of an advanced wafer level process which allows to integrate dies collectively thinned down to 30 μm in a flexible label. The common point of both process is that the components are interconnected by flip-chip.
关键词： Thin silicon Die,Flexible electronics,Packaging
更新于2025-09-09 09:28:46
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Geometry optimization of a barrel silicon pixelated tracker
摘要： We have studied optimization of the design of a barrel-shaped pixelated tracker for given spatial boundaries. The optimization includes choice of number of layers and layer spacing. Focusing on tracking performance only, momentum resolution is chosen as the (cid:12)gure of merit. The layer spacing is studied based on Gluckstern’s method and a numerical geometry scan of all possible tracker layouts. A formula to give the optimal geometry for curvature measurement is derived in the case of negligible multiple scattering to deal with trajectories of very high momentum particles. The result is validated by a numerical scan method, which could also be implemented with any track (cid:12)tting algorithm involving material e(cid:11)ects, to search for the optimal layer spacing and to determine the total number of layers for the momentum range of interest under the same magnetic (cid:12)eld. The geometry optimization of an inner silicon pixel tracker proposed for BESIII is also studied by using a numerical scan and these results are compared with Geant4-based simulations.
关键词： least squares,numerical scan,BESIII silicon pixel tracker,optimal spacing,kalman (cid:12)lter initialization,tracker geometry optimization
更新于2025-09-09 09:28:46
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Fabrication of P-Type Microcrystalline Silicon Thin Film by Magnetron Sputtering and Copper Induced Crystallization
摘要： P-type micro-crystalline Silicon thin film was realized by magnetron sputtering and copper-induced crystallization for photovoltaic applications. Firstly, amorphous Silicon film was deposited by direct current magnetron sputtering from highly-doped single crystalline Si target. Then it was crystallized by copper-induced crystallization in nitrogen atmosphere with the annealing temperatures ranges from 450 to 950 °C. The micro-crystalline Silicon thin film was characterized by X-ray diffraction and Ramon spectrometry. Its grain size and crystallization ratio were approximately 20 nm and 93%, respectively. Finally, a PN junction solar cell was fabricated by creating the P-type microcrystalline Si thin film (as the P region) on a highly-doped N-type Silicon wafer (as N region). The fabricated device showed the good rectification characteristics of a typical diode where under dark condition it represented the rectification ratio of 150 and reverse saturation current density of 9 μA.cm-2. The fabricated solar cell showed a significant photovoltaic effect under AM 1.5G illumination conditions. The highest photovoltaic conversion efficiency of 2.1%, with the open-circuit voltage of 416 mV and short-circuit current density of 13.3 mA/cm2, was measured from the sample fabricated by the optimal process.
关键词： magnetron sputtering,microcrystalline silicon thin film,copper induced crystallization,characterization
更新于2025-09-09 09:28:46
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Perspective Field Emitters For Electron-Beam Microwave Devices Of Short-Wave Millimeter And Submillimeter Range
摘要： In this report, distributed field emitters are considered, which are perspective for use in miniature but high-voltage electronic devices operating in a technical vacuum. The main attention is paid to the latest developments of the authors on the creation of a new type cathodes: multitip silicon cathodes with protective metal-fullerene coating and multilayer cathodes prepared from the brought into contact materials with different work function. The possibility of obtaining with the help of these cathodes field emission currents and current densities sufficient for maintenance of operation of microwave devices of millimeter and submillimeter range is demonstrated.
关键词： millimeter and submillimeter range,microwave devices,multilayer cathodes,metal-fullerene coating,field emitters,multitip silicon cathodes
更新于2025-09-09 09:28:46
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Reconfigurable On-Chip Mode Exchange for Mode-Division Multiplexing Optical Networks
摘要： Data exchange plays a key role in enhancing network resources utilization and optimizing network performance. In this paper, a data exchange device based on mode-division multiplexing (MDM) technology is proposed and demonstrated, which is capable of exchanging data information between a fundamental mode (TE0) signal and an arbitrary high-order mode (TEx) signal. We experimentally demonstrate the exchange between a TE0 mode signal and a TE1 mode signal using single microring resonator. The insertion loss is about 7.5 dB including terminal coupling loss, the extinction ratio is more than 20 dB within the C band. The crosstalk for the TE1-to-TE0 and TE0-to-TE1 mode conversions is measured to be less than -22 dB and -16 dB, respectively. Clear and open eye diagrams of two different wavelength signals at 10 Gb/s are obtained. The proposed scheme is expected to be used for on-chip MDM networks in future due to its scalability, compact size and low power consumption.
关键词： photonic integrated circuits,microring resonator (MRR),Silicon photonics,mode-division multiplexing,integrated optics
更新于2025-09-09 09:28:46
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Interleaved Silicon Nitride AWG Spectrometers
摘要： Interleaved arrayed waveguide gratings (AWGs) have a great potential in providing large channel counts and narrower channel spacings for many applications, including optical communication, spectroscopy, and imaging. Here, a 75-channel silicon nitride based interleaved AWG was experimentally demonstrated. The design is comprised of a 3-channel primary AWG with 1 nm of resolution and three 25-channel secondary AWGs each with 3 nm of resolution. The final device has a spectral resolution of 1 nm over 75 nm bandwidth centered at 1550 nm. Its performance is compared with a conventional AWG spectrometer with 75 nm of bandwidth and 1 nm of resolution. The interleaved AWG demultiplexer showed lower crosstalk and better uniformity in addition to being two times smaller than the conventional design.
关键词： interleaver,C-band,arrayed waveguide grating,silicon nitride,demultiplexer,Integrated optics
更新于2025-09-09 09:28:46
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Metal Substrate-Induced Line Width Compression in the Magnetic Dipole Resonance of a Silicon Nanosphere Illuminated by a Focused Azimuthally Polarized Beam
摘要： We investigate the modification of the magnetic dipole resonance of a silicon nanosphere, which is illuminated by a focused azimuthally polarized beam, induced by a metal substrate. It is found that the magnetic dipole of the silicon nanosphere excited by the focused azimuthally polarized beam and its image dipole induced by the metal substrate are out of phase. The interference of these two anti-parallel dipoles leads to a dramatic line width compression in the magnetic dipole resonance, manifested directly in the scattering spectrum of the silicon nanosphere. The quality factor of the modified magnetic dipole resonance is enhanced by a factor of ～ 2.5 from ～ 14.62 to ～ 37.25 as compared with that of the silicon nanosphere in free space. Our findings are helpful for understanding the mode hybridization in the silicon nanosphere placed on a metal substrate and illuminated by a focused azimuthally polarized beam and useful for designing photonic functional devices such as nanoscale sensors and color displayers.
关键词： Azimuthally polarized beam,Magnetic dipole resonance,Image dipole,Silicon nanoparticle,Metal substrate
更新于2025-09-09 09:28:46