研究目的
To propose and demonstrate a data exchange device based on mode-division multiplexing (MDM) technology capable of exchanging data information between a fundamental mode (TE0) signal and an arbitrary high-order mode (TEx) signal.
研究成果
The proposed on-chip mode exchange device utilizing MRRs is capable of exchanging data information between a TE0 mode signal and a TEx mode signal. The device demonstrated clear and open eye diagrams at 10 Gb/s, with an insertion loss of about 7.5 dB and an extinction ratio of more than 20 dB within the C band. The device's scalability, compact size, and low power consumption make it suitable for future on-chip MDM networks.
研究不足
The mode crosstalk for TE0-to-TE1 mode conversion is less than -16 dB, which could be improved. The device's scalability and compatibility with WDM systems are mentioned as areas for future optimization.
1:Experimental Design and Method Selection:
The experiment involves designing and fabricating a TE0-TE1 mode exchange device using a single microring resonator (MRR) on a silicon-on-insulator (SOI) substrate. The device includes a taper multimode waveguide, a microring waveguide, and a fundamental mode feedback waveguide.
2:Sample Selection and Data Sources:
The device is fabricated on a SOI substrate with 220 nm top silicon on 3 μm buried oxide. The waveguides are patterned by 248 nm deep ultraviolet lithography and inductively coupled plasma etching (ICP).
3:List of Experimental Equipment and Materials:
SOI substrate, deep ultraviolet lithography equipment, ICP etching equipment, TiN heater for tuning the resonant wavelength of MRR.
4:Experimental Procedures and Operational Workflow:
The device's static and dynamic characteristics are measured using an amplified spontaneous emission source (ASE), tunable voltage source (TVS), optical spectrum analyzer (OSA), and digital communication analyzer (DCA).
5:Data Analysis Methods:
The transmission spectra are normalized with a fiber-to-fiber structure to eliminate the effect of light source. The insertion loss, extinction ratio, and mode crosstalk are measured and analyzed.
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microring resonator
Used for mode exchange between TE0 and TE1 modes.
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TiN heater
Integrated on the top of each microring to tune the resonant wavelength of MRR through the thermal-optic effect.
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SOI substrate
Substrate for fabricating the device.
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deep ultraviolet lithography equipment
Used for patterning the waveguides.
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inductively coupled plasma etching equipment
ICP
Used to form the structure of the device.
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amplified spontaneous emission source
ASE
Used for static characterization of the device.
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tunable voltage source
TVS
Used for static characterization of the device.
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optical spectrum analyzer
OSA
Used for static characterization of the device.
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digital communication analyzer
DCA
Used for dynamic measurement of the device.
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bit pattern generator
BPG
Generates a 10 Gb/s 231-1 pseudo-random bit sequence for dynamic measurement.
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tunable laser
TL
Launches monochromatic continuous light-wave for dynamic measurement.
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LiNbO3 optical modulator
OM
Modulates the light-wave for dynamic measurement.
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erbium-doped fiber amplifier
EDFA
Amplifies the output signal from the device for dynamic measurement.
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optical tunable filter
OTF
Filters out the unrequired wavelength for dynamic measurement.
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