- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2019
- 2018
- JBSFET
- Robustness
- MOSFET
- Reliability
- Silicon Carbide
- 4H-SiC
- Failure Mechanism
- Short Circuit
- Ruggedness
- silicon photonics
- Electrical Engineering and Automation
- Optoelectronic Information Science and Engineering
- Electronic Science and Technology
- North Carolina State University
- MediaTek, Inc.
- JCET STATS ChipPAC Pte. Ltd.
-
Stored energy release in neutron irradiated silicon carbide
摘要： The purpose of this investigation is to experimentally quantify the stored energy release upon thermal annealing of previously irradiated high-purity silicon carbide (SiC.) Samples of highly-faulted poly-crystalline CVD b-SiC and single crystal 6HeSiC were irradiated in a mixed spectrum ?ssion reactor near 60 (cid:1)C in a ?uence range from 5 (cid:3) 1023 to 2 (cid:3) 1026 n/m2 (E > 0.1 MeV), or about 0.05e20 dpa, in order to quantify the stored energy release and correlate the release to the observed microscopic swelling, lattice dilation, and microstructure as observed through TEM. Within the ?uence of this study the crystalline material was observed to swell to a remarkable extent, achieving 8.13% dilation, and then cross a threshold dose for amorphization at approximately 1 (cid:3) 1025 n/m2 (E > 0.1 MeV) Once amorphized the material attains an as-amorphized swelling of 11.7% at this irradiation condition. Coincident with the extraordinary swelling obtained for the crystalline SiC, an equally impressive stored energy release of greater than 2500 J/g at the critical threshold for amorphization is inferred. As expected, following amorphization the stored energy in the structure diminishes, measured to be approximately 590 J/g. Generally, the ?ndings of stored energy are consistent with existing theory, though the amount of stored energy given the large observed crystalline strain is remarkable. The overall conclusion of this work ?nds comparable stored energy in SiC to that of nuclear graphite, and similar to graphite, a stored energy release in excess of its speci?c heat in some irradiation conditions.
关键词： Neutron irradiation,Amorphization,Silicon carbide,Swelling,Stored energy
更新于2025-09-04 15:30:14
-
A multi-step etch method for fabricating slightly tapered through-silicon vias based on modified Bosch process
摘要： In this paper, a multi-step etching method based on Bosch process was investigated to fabricate a slightly tapered via. The diameter of vias was scaled from 40 to 100 lm. Isotropic etching step was added into Bosch process to control the angle of the tapered vias. The slope angle could be adjusted by changing the time settings of isotropic etching step. The in?uence of the platen temperature was also studied. The passivation and etching steps are extremely sensitive to temperature. Silicon grass could be formed at low temperature. The two different processes of isotropic SF6 etching and Cl2/HBr etching were also compared. The wrinkles and cracks were observed on the surface after treatment with isotropic SF6 etching. The Cl2/HBr etching method is much better for removing the scallops.
关键词： platen temperature,Cl2/HBr etching,slightly tapered through-silicon vias,multi-step etch method,SF6 etching,isotropic etching,modified Bosch process
更新于2025-09-04 15:30:14
-
Synthesis of Si-based KH560/RGO@Fe3O4 composite for improving electromagnetic properties in 2–18?GHz frequency range
摘要： Silicon coupling reagent is regarded as a common additive on surface treatment of polymer due to its high bonding strength and low cost. In this paper, a series of γ-(2, 3-epoxypropoxy) propyltrimethoxysilane (KH560)-based reduced graphene oxide (RGO)@Fe3O4 (KH560/RGO@Fe3O4) composites with different ratio of Fe3O4 nanoparticles (NPs) are synthesized by a facile hydrothermal method. It is confirmed that the silicon reagent KH560, as a hopeful candidate for increasing the RGO lattice defects, is favorable to improve the electromagnetic wave absorption. Meanwhile, the microwave attenuation mechanism of KH560/RGO@Fe3O4 composite suggests that the dielectric loss mainly causes by multiple Debye dipolar relaxation and its magnetic loss comes from the eddy-current effect of Fe3O4 NPs over the high frequency range. In consequence, the KH560/RGO@Fe3O4 composite endows the excellent absorption performance, the reflection loss (RL) value is optimized to ? 25 dB at 14.1 GHz with a thickness of 3 mm and the maximum frequency bandwidth for RL < ? 10 dB is 4.1 GHz with a thickness of 4 mm.
关键词： Electromagnetic wave absorption,Fe3O4 nanoparticles,Reduced graphene oxide,Hydrothermal method,Silicon coupling reagent
更新于2025-09-04 15:30:14
-
Stability and Reactivity of Silicon Magic Numbers Doped with Aluminum and Phosphorus Atoms
摘要： The progressive scaling down of the silicon-based electronics has allowed to develop devices at nanometer scale, requiring new engineering techniques guided by fundamental chemical and physical concepts. Particularly, the nanostructured cluster systems are promising materials since their physical-chemical properties are sensitive to its shape, size and chemical components, such that completely different materials can be produced by the simple addition or removal of a single atom. These size-tunable properties can open a new area in materials science and engineering. In the present work, quantum chemical methods were used to study the chemical substitution effects caused by subvalent (aluminum) and supervalent (phosphorus) atoms in the physical-chemical properties of some small silicon clusters which demonstrate high stability, called magic numbers. The changes in the electronic structure and chemical acceptance to the dopants were evaluated with respect to: ionization potential, electronic excitation energy, stability and reactivity parameters. Taken together, these results enable to identify the most stable silicon-doped clusters. Regarding electrophilic reactions, Si10P is the most favorable system, while for nucleophilic reactions, none of the doped clusters resulted in higher stability.
关键词： Aluminum,Silicon Magic Numbers,Quantum Chemistry,Spectroscopy,Molecular Structure,Phosphorus Atoms
更新于2025-09-04 15:30:14
-
The Effects of Thermal Neutron Irradiation on Current-Voltage and Capacitance-Voltage Characteristics of Au/n-Si/Ag Schottky Barrier Diodes
摘要： To observe the neutron transmutation and displacement damage effects, Au/n-Si/Ag Schottky barrier diodes were exposed to thermal neutron irradiation. Irradiation induced changes in Schottky barrier height, saturation current, and donor concentration were investigated by using current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the diodes. The irradiation for 10 s caused a little change in the Schottky diode parameters which were obtained from I-Vand C-V measurements. Observable changes in the parameters occurred after the second irradiation of 30 s duration. After the total dose, an increase in saturation current and barrier height inhomogeneties took into place and a decrease in carrier concentration was observed due to the carrier removal effect of thermal neutron-induced damages. Whereas the values of zero bias barrier height have little change after irradiations, the values of ideality factor increased after irradiations. The values of zero-bias barrier height for all diodes was also calculated from reverse bias current characteristics. After second dose, the values of zero-bias barrier height decreased for all diodes. The values of series resistance were determined by Cheung functions before and after irradiations. Before irradiations, the values were found between 2.10 kΩ and 2.76 kΩ. After second dose, the values of series resistance of all diodes decreased and were found between 1.59 kΩ and 2.20 kΩ. Furthermore, the proof of thermal neutron transmu- tation of elements in the devices was given via energy dispersive spectroscopy (EDS) mapping.
关键词： Semiconductor device radiation effects,Schottky diode,Electrical characterization,EDS mapping,Silicon,Thermal neutron irradiation
更新于2025-09-04 15:30:14
-
Detection of single holes generated by impact ionization in silicon
摘要： We propose a method for the observation of the electron-initiated impact ionization process in Si, which is potentially capable of detecting individual impact ionization events. This method detects holes generated by the impact ionization with single charge sensitivity. We demonstrate the method at 8 K by detecting the chain of single holes generated for a constant electron-injection current with the injection-energy threshold close to the Si bandgap energy.
关键词： silicon,electron-initiated,single holes,impact ionization,bandgap energy
更新于2025-09-04 15:30:14
-
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(1?0?0) substrate by molecular beam epitaxy
摘要： We grew a GaSb/Al0.3Ga0.7Sb multiple-quantum-well (MQW) structure on a two-inch Si(1 0 0) substrate using a 100-nm-thick heteroepitaxial GaSb thin-film buffer with a nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluated the surface morphology and the photoluminescence (PL) and X-ray diffraction spectra of the MQW structure. The full width at half maximum of the PL spectrum of the GaSb/Al0.3Ga0.7Sb MQW structure was very narrow, although the buffer thickness was much lower than those for previously reported GaSb-based QW structures on Si(1 0 0) substrates. This indicated that the surface of the 100-nm-thick GaSb thin-film buffer was sufficiently flat to form heterostructures and MQWs. The surface roughness and crystalline quality of the GaSb buffer and MQW structure were strongly dependent on the growth temperature; high-performance devices were realized by optimizing the growth temperature. These results showed the advantage and potential applicability of the GaSb/Al0.3Ga0.7Sb MQW structure and the GaSb thin-film buffer with GaSb dots as a nucleation layer grown on Si(1 0 0) substrates.
关键词： A1. Nucleation layer,B1. Gallium antimonide,A3. Quantum wells,B2. Semiconducting III–V materials,A3. Molecular beam epitaxy (MBE),B1. Silicon substrate
更新于2025-09-04 15:30:14
-
An Open-Source Artificial Neural Network Model for Polarization-Insensitive Silicon-on-Insulator Subwavelength Grating Couplers
摘要： We present an open-source deep artificial neural network (ANN) model for the accelerated design of polarization-insensitive subwavelength grating (SWG) couplers on the silicon-on-insulator platform. Our model can optimize SWG-based grating couplers for a single fundamental-order polarization, or both, by splitting them counter-directionally at the grating level. Alternating SWG sections are adopted to reduce the reflections (loss) of standard, single-etch devices—further accelerating the design time by eliminating the need to process a second etch. The model of this device is trained by a dense uniform dataset of finite-difference time-domain (FDTD) optical simulations. Our approach requires the FDTD simulations to be made up front, where the resulting ANN model is made openly available for the rapid, software-free design of future standard photonic devices, which may require slightly different design parameters (e.g., fiber angle, center wavelength, polarization) for their specific application. By transforming the nonlinear input–output relationship of the device into a matrix of learned weights, a set of simple linear algebraic and nonlinear activation calculations can be made to predict the device outputs 1,830 times faster than numerical simulations, within 93.2% accuracy of the simulations.
关键词： subwavelength devices,machine learning,Silicon photonics,polarization insensitivity,grating couplers,artificial neural networks
更新于2025-09-04 15:30:14
-
Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
摘要： Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015 neq∕cm2 and detection efficiencies above 99.5%. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
关键词： HV-MAPS,Silicon pixel sensor,Monolithic active pixel sensor,High luminosity LHC,ATLAS ITk upgrade,CMOS
更新于2025-09-04 15:30:14
-
Prototype time-of-flight PET utilizing capacitive multiplexing readout method
摘要： Positron emission tomography (PET) is an imaging technique that provides the spatial distribution of radiopharmaceuticals labeled with positron emitting radioisotopes by detecting the gamma rays produced from positron-electron annihilation. Recently, a time-of-flight (TOF) PET has drawn an increasing attention because it is capable of reducing the scan time or injected dose with improved the signal-to-noise ratio (SNR) in reconstructed PET images by precisely localizing the emission point along the line-of-response using TOF information. This study presents a multiplexing method that can effectively reduce the number of readout channels of a silicon photomultiplier (SiPM) based TOF PET while achieving excellent timing resolution. A capacitive multiplexing method was employed that could improve the degradation of the timing performance occurring in a conventional resistive multiplexing method. In addition, a high-speed signal processing method is also presented for the TOF PET. A TOF PET prototype was developed to demonstrate the imaging capability of the TOF PET system. A flood histogram of a PET detector module, composed of an 8×8 array of 3.01×3.01×20.00 mm3 lutetium fine silicate (LFS) scintillators and an 8×8 array of 3.16×3.16 mm2 SiPMs, was acquired using the proposed method. All 64 scintillators were successfully resolved in the flood histogram. The average energy resolution and coincidence resolving time (CRT) were 14.2±1.1% and 431±41 ps full width at half maximum (FWHM), respectively. A tomographic image of the hot-rod phantom was successfully acquired using the TOF PET prototype, and rods with a size of 2.4 mm in diameter were clearly resolved in the reconstructed image.
关键词： PET imaging,silicon photomultiplier,Time-of-flight PET,capacitive multiplexing,timing resolution
更新于2025-09-04 15:30:14