研究目的
Investigating the growth of GaSb/Al0.3Ga0.7Sb multiple-quantum-well (MQW) structures on Si(1 0 0) substrates using a GaSb thin-film buffer with a nucleation layer of GaSb dots by molecular beam epitaxy (MBE) and evaluating their surface morphologies and photoluminescence (PL) and X-ray diffraction (XRD) spectra.
研究成果
The study demonstrated the successful growth of high-quality GaSb/Al0.3Ga0.7Sb MQW structures on Si(1 0 0) substrates using a GaSb thin-film buffer with a nucleation layer of GaSb dots. The narrow FWHM of the PL spectrum indicated the high quality of the MQW structure, despite the thin buffer layer. The results show the potential applicability of this approach for developing Sb-based photonic and electronic QW devices.
研究不足
The surface roughness and crystalline quality of the GaSb buffer and MQW structure were strongly dependent on the growth temperature, indicating potential areas for optimization in growth conditions.
1：Experimental Design and Method Selection:
The study involved growing GaSb/Al0.3Ga0.7Sb MQW structures on two-inch Si(1 0 0) substrates using a solid-source MBE system. The growth conditions were optimized for the GaSb thin-film buffer and MQW structure.
2：3Ga7Sb MQW structures on two-inch Si(1 0 0) substrates using a solid-source MBE system. The growth conditions were optimized for the GaSb thin-film buffer and MQW structure.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The samples were grown on two-inch n-type Si(1 0 0) substrates. The Si surface was terminated by H atoms after etching in a buffered hydrofluoric acid (BHF) solution.
3：List of Experimental Equipment and Materials:
A solid-source MBE system (Veeco GEN II), atomic force microscopy (AFM) system (SII SPA400 and SPI3800N), photoluminescence (PL) measurement setup with a Nd:YVO4 laser (Spectra-Physics Millennia Prime) and monochromator (HORIBA iHR320 and Symphony II XGA), and high-resolution XRD system (Rigaku SmartLab) were used.
4：Experimental Procedures and Operational Workflow:
The Si substrate was thermally cleaned, and a GaSb dot nucleation layer was grown followed by a GaSb thin-film buffer and GaSb/Al0.3Ga0.7Sb MQW structure. The surface morphology was observed by AFM, and PL and XRD spectra were measured.
5：3Ga7Sb MQW structure. The surface morphology was observed by AFM, and PL and XRD spectra were measured.
Data Analysis Methods:
5. Data Analysis Methods: The PL and XRD spectra were analyzed to evaluate the surface morphology and crystalline quality of the MQW structure.
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