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Efficient Computation of Multidimensional Lambertian Optical Absorption
摘要： Approximate analytic expressions are given for the absorption of light emanating from a nonuniformly illuminated Lambertian surface into an absorptive layer having a spatially uniform coefficient of absorption, α. This situation is particularly relevant for silicon solar cells, which have deliberately textured surfaces and grid fingers that create nonuniform illumination. The approach uses Fourier superposition to represent spatial variation in the plane of the surface, represented by a series of wavenumbers in each axis. It is observed that the absorption rate and flux density at any given distance, z, into the layer is given by an effective wavenumber, keff, that is the root-sum-square of the wavenumbers in the two axes. This allows for simple analytic expressions that, for each Fourier component, depend only on the dimensionless terms keffz and αz. This Fourier-superposition approach is computationally efficient compared with ray tracing, and is particularly effective when the nonuniform illumination is periodic and symmetric in each axis, in which case the Fourier superposition becomes a cosine series of spatial harmonics. An example illustrates the good fidelity that can be obtained using as few as ten harmonics in each axis.
关键词： Lambertian,photovoltaics,nonuniform,silicon
更新于2025-09-04 15:30:14
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Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends
摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.
关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band
更新于2025-09-04 15:30:14
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Annealing effects on recombinative activity of nickel at direct silicon bonded interface
摘要： By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 ?C. At temperatures (cid:62)400 ?C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 ?C was a mixture of NiO and NiSi2.
关键词： direct silicon bonded interface,recombination activity,annealing effects,X-ray analyses,nickel,capacitance transient analyses
更新于2025-09-04 15:30:14
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Silicon Film Deposition Using a Gas-Jet Plasma-Chemical Method: Experiment and Gas-Dynamic Simulation
摘要： This paper presents the results of an experimental study, numerical calculation, and analysis within the framework of a gas-dynamic model of silicon ?lm deposition by a gas-jet plasma-chemical method. A numerical model of gas mixtures ?owing out of an annular nozzle unit and into a reactor is developed, and it allows one to determine a ?lm thickness distribution over the surface of substrates placed in the reactor and satisfactorily describes the experimental data obtained.
关键词： reactor,simulation,plasma-chemical deposition,thin silicon ?lms,free jet,electron-beam plasma,DSMC method
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - System-Level Integrated Active Silicon Photonic Biosensor for Detecting Small Molecule Interactions
摘要： We present a system-level integration of active silicon photonic biosensors. With on-chip photodetectors, sensors are characterized in the photovoltaic mode. A biotin-avidin affinity assay is employed to exemplify the detection of small molecule interactions, showing a detection limit in the order of 10?5 M.
关键词： photovoltaic mode,small molecule interactions,detection limit,silicon photonic biosensors,biotin-avidin affinity assay
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA, USA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - Low-Loss Wafer-Scale Silicon Photonic Interposer Utilizing Inverse-Taper Coupler
摘要： This paper experimentally demonstrates a low loss inter-chip coupler with coupling loss below 1dB utilizing inverse-taper coupling from a wafer scale silicon photonic interposer, designed to distribute laser emission to 100 photonic integrated circuit dies (PICs) with equal power and phase. During the packaging, PICs are flip-chip bounded onto the interposer to achieve electrical, optical, and thermal coupling.
关键词： Optical interconnect,Optical package,Optical coupler,Silicon photonics,Photonics integrated circuit,Nanofabrication
更新于2025-09-04 15:30:14
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34-GBd Linear Transimpedance Amplifier for 200-Gb/s DP-16-QAM Optical Coherent Receivers
摘要： High spectral ef?ciency offered by the coherent optical communication links makes them attractive for the next-generation optical communication links. Using advanced modulation schemes such as dual-polarization quadrature-amplitude modulation (DP-QAM) data rates beyond 200 Gb/s can be achieved. A key component of such links is the wide-bandwidth and high-linearity coherent optical receiver. In this paper, we present a fully differential (FD) optical receiver architecture consisting of a variable-gain transimpedance ampli?er (VG-TIA) followed by a VG ampli?er (VGA). The proposed optical receiver employs a dual-feedback automatic gain control (AGC) loop that controls both the front-end VG-TIA and the following VGA to achieve both low-noise and high-linearity operation. A new photodiode (PD) dc current cancellation scheme is developed and implemented for the full differential front-end TIA. A prototype dual-TIA chip is fabricated in a 0.13-μm SiGe BiCMOS process. The presented TIA achieves 20-pA/√Hz input-referred noise (IRN) density, 27-GHz, 3-dB bandwidth, and 1.5% total harmonic distortion (THD) at 1-mApp input PD current and 500-mVpp output voltage swing. This enables the 34-GBd operation with the bit error rate (BER) of 10?10 and 5.4 × 10?4 using DP-QPSK and DP-16-QAM formats at optical signal-to-noise ratios (OSNRs) of 25 and 30 dB, respectively, demonstrating the 100- and 200-Gb/s single wavelength optical coherent receiver operation. The dual-TIA chip occupies an area of 1.4 mm × 1.6 mm and consumes 313 mW per channel at 34 GBd from a 3.3-V supply.
关键词： dual-polarization (DP)-QPSK,Automatic gain control (AGC),coherent optical communication link,coherent optical receiver,silicon photonics,Linear transimpedance ampli?er (TIA),SiGe,DP-16-quadrature-amplitude modulation (QAM)
更新于2025-09-04 15:30:14
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A new method of accurately measuring photoconductive performance of 4H-SiC photoconductive switches
摘要： A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS were precisely measured, where a maximum on-state photoconductivity of 6.26 (Ω · m)?1, a minimum on-state resistivity of 0.16 Ω · m and an accurate minimum resistance of 1.71 Ω were obtained for SiC substrate. The quantitative relationship between the on-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.
关键词： pulse-power system switches,silicon carbide,Photoconductive switch,on-state resistance,intrinsic photoconductivity
更新于2025-09-04 15:30:14
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On the instantaneous dose rate and angular dependence of monolithic silicon array detectors
摘要： The use of small radiation fields characterized by very steep dose gradients is common in modulated arc x-ray radiotherapy. Dosimeters for quality assurance applications would ideally have sensitive volumes relatively small with respect to the field, along with negligible instantaneous dose rate and angular dependence. Silicon-based dosimeters can be fabricated with sensitive volumes < 100 μm across, provide a stable and near energy-independent response in megavoltage photon beams, along with a good linearity with accumulated dose and real-time read-out. However, their sensitivity is instantaneous dose rate and angular dependent. Monolithic silicon array detectors with sufficiently small sensitive volumes and pitch are suitable for high-resolution 2D dose mapping in radiation fields with steep dose gradients. The Octa is a 2D monolithic silicon array detector. It has 512 diode-sensitive volumes arranged with a sub-millimeter pitch. The physical characteristics of the substrate on which it is based, in terms of resistivity and defects concentration, strongly affect its performance. We report on the experimental characterization of two versions of the Octa, manufactured on a bulk and on an epitaxial substrate respectively. Their performance is compared and discussed in terms of their instantaneous dose rate and angular dependence in the context of quality assurance applications in small radiation fields delivered with modulated arc radiotherapy.
关键词： small-field dosimetry,angular dependence,instantaneous dose rate dependence,2D monolithic silicon array detector
更新于2025-09-04 15:30:14
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Recycling of Silicon Sludge and its Optical Properties
摘要： We have developed a mass production process of Si quantum dots using photo-induced chemical etching method with oxidation and etching agents and have investigated its optical properties. Average size of the fabricated Si quantum dots was estimated to be 2 nm. Absorption peaks of the fabricated quantum dots were observed in the short wavelength regions, e.g., 200 - 350 nm. On the other hand, in the case of raw sludge, absorption was not observed in the UV-visible wavelength regions due to the narrow energy band gap (e.g., 1.12 eV). The calculated energy band gap of fabricated Si quantum dots was calculated to be 3.5 eV by the modified Kubelka-Munk function. Blue emission peaks around 475 nm wavelengths were observed due to the quantum confinement effect. When the emission peak was fixed, two excitation peaks were observed in 340 nm and 380 nm, respectively, which seemed to be due to the energy band gap widening and/or surface coating with an ultrathin layer.
关键词： Silicon sludge,Recycling,Photoluminescence,Chemical etching
更新于2025-09-04 15:30:14