- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2019
- 2018
- JBSFET
- Robustness
- MOSFET
- Reliability
- Silicon Carbide
- 4H-SiC
- Failure Mechanism
- Short Circuit
- Ruggedness
- silicon photonics
- Electrical Engineering and Automation
- Optoelectronic Information Science and Engineering
- Electronic Science and Technology
- North Carolina State University
- MediaTek, Inc.
- JCET STATS ChipPAC Pte. Ltd.
-
centers in amorphous
摘要： We investigate the charge-trapping behavior in nitrogen-deficient amorphous silicon nitride (a-Si3N4?x) using first-principles calculations. The amorphous ensembles with one nitrogen atom missing are generated through melt-quench procedures. The nitrogen deficiency mainly produces one Si—Si bond and one K center (Si dangling bond). The energy level of defect states indicates that the K centers act as possible trap sites. The transition levels of K centers are estimated, and it is found that the Hubbard U energy ranges from ?1.14 to 1.11 eV. Even though most K centers show positive U, the charge states of most centers in the ensemble are either positive or negative under the charge-neutrality condition, resulting in 'seemingly negative-U' behavior. This is consistent with the diamagnetic signal in experiments. The charge-injection energy of K centers is evaluated on the basis of the Franck-Condon approximation, and the average trap depths for electrons (1.33 eV below the conduction edge) and holes (1.54 eV above the valence edge) are in good agreement with experimental data.
关键词： K centers,Franck-Condon approximation,first-principles calculations,Hubbard U energy,amorphous silicon nitride,charge-trapping behavior
更新于2025-09-04 15:30:14
-
[IEEE 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - San Diego, CA, USA (2018.10.15-2018.10.17)] 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - 450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
摘要： This paper deals with the optimization of a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture. Arsenic and phosphorous doping species are studied. On the one hand, both silicon defects and dopants profiles control are evaluated and on the other hand, hf performances are presented. Carbon-phosphorous co-implantation is also investigated and a state-of-the-art 450 GHz fT HBT compatible with 55-nm MOSFETs is demonstrated through a device layout study.
关键词： MOSFET,Implanted Collector,Heterojunction Bipolar Transistor (HBT),Silicon-Defects
更新于2025-09-04 15:30:14
-
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
摘要： An electrodeposition process for void-free bottom-up ?lling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were ?lled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO4 – 0.25 mol/L CH3SO3H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature ?lling is presented.
关键词： Cu filling,MEMS technology,through silicon vias,electrodeposition
更新于2025-09-04 15:30:14
-
Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors
摘要： An early evaluation in terms of circuit design is in order to assess the feasibility and practicability essential aspects for emerging nanotechnologies. Recon?gurable nanotechnologies, such as silicon or germanium nanowire-based recon?gurable ?eld-effect transistors, hold great promise as suitable primitives for enabling multiple functionalities per computational unit. However, contemporary CMOS circuit designs when applied directly with this emerging nanotechnology often result in sub-optimal designs. For example, 31% and 71% larger area was obtained for our two exemplary designs. Hence, new approaches delivering tailored circuit designs are needed to truly tap the exciting feature set of these recon?gurable nanotechnologies. To this effect, we propose six functionally enhanced logic gates based on a recon?gurable nanowire technology and employ these logic gates in ef?cient circuit designs. We carry out a detailed comparative study for a recon?gurable multifunctional circuit, which shows better normalized circuit delay (20.14%), area (32.40%), and activity as the power metric (40%) while exhibiting similar functionality as compared with the CMOS reference design. We further propose a novel design for a 1-bit arithmetic logic unit-based on silicon nanowire recon?gurable FETs with the area, normalized circuit delay, and activity gains of 30%, 34%, and 36%, respectively, as compared with the contemporary CMOS version.
关键词： silicon nanowire (SiNW) transistor,multi-independent gate recon?gurable ?eld-effect transistor,three-independent gate ?eld-effect transistor (TIGFET),Functionally enhanced logic gates
更新于2025-09-04 15:30:14
-
[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide
摘要： The 1.2 kV-rated trench-gate SiC power MOSFET with thick trench bottom oxide is analyzed and compared with previous trench-gate SiC power MOSFET structures. Speci?c on-resistance (Ron,sp), breakdown voltage (BV), threshold voltage (VT H ), gate-drain capacitance (Cgd,sp) and gate charge (Qgd) were extracted using numerical simulations for trench bottom oxide thickness between 500 ?A and 8000 ?A. It was found that the electric ?eld in the trench bottom oxide was below 4 MV/cm for oxide thickness beyond 4000 ?A. An analytical model is proposed to allow estimation of the electric ?eld in the trench bottom oxide. The Ron,sp for the thick bottom oxide structure was 1.9 m? ? cm2 (at Vgs of 20 V), Cgd,sp (at Vds= 1000 V) was 417 pF/cm2 and Qgd,sp (at Vgs =20 V, Rg=10 ?, Vds=800V) was 671 nC/cm2, which is signi?cantly better than most planar-gate devices. This structure has superior speci?c on-resistance compared with previous trench-gate and planar-gate structures.
关键词： Silicon Carbide,reverse transfer capacitance,speci?c on-resistance,gate charge,trench bottom oxide,breakdown voltage,threshold voltage,Trench-gate MOSFET (UMOSFET)
更新于2025-09-04 15:30:14
-
All-Silicon Topological Semimetals with Closed Nodal Line
摘要： Owing to the natural compatibility with current semiconductor industry, silicon allotropes with diverse structural and electronic properties provide promising platforms for the next-generation Si-based devices. After screening 230 all-silicon crystals in the zeolite frameworks by first-principles calculations, we disclose two structurally stable Si allotropes (AHT-Si24 and VFI-Si36) containing open channels as topological node-line semimetals with Dirac nodal points forming a nodal loop in the kz=0 plane of Brillouin zone. Interestingly, their nodal loops protected by inversion and time-reversal symmetries are robust against SU(2) symmetry breaking due to very weak spin-orbit coupling of Si. When the nodal lines are projected onto the (001) surface, flat surface bands can be observed because of the nontrivial topology of the bulk band structures. Our discoveries extend the topological physics to the three-dimensional Si materials, highlighting the possibility to realize low-cost, nontoxic and semiconductor-compatible Si-based electronics with topological quantum states.
关键词： Zeolite frameworks,Node-line semimetals,Topological semimetals,Silicon allotropes,First-principles calculations
更新于2025-09-04 15:30:14
-
[Institution of Engineering and Technology 12th European Conference on Antennas and Propagation (EuCAP 2018) - London, UK (9-13 April 2018)] 12th European Conference on Antennas and Propagation (EuCAP 2018) - Antennas for Space Instruments from GHz to THz
摘要： In this paper we present an overview of different antenna technologies for space-based instruments. We show that some of the designs that work well at gigahertz frequencies are difficult to implement at terahertz frequencies due to tight tolerance and rms surface finish requirements. We also show that antenna designs are dictated not only by the frequency of operations but also by the space platform of choice. In this paper, we also present ideas for low-profile terahertz antennas for implementation on SmallSat and CubeSat platforms.
关键词： silicon,micromachining,antenna,terahertz,low-profile,micro-lens
更新于2025-09-04 15:30:14
-
A micro-scale plasma spectrometer for space and plasma edge applications (invited)
摘要： A plasma spectrometer design based on advances in lithography and microchip stacking technologies is described. A series of curved plate energy analyzers, with an integrated collimator, is etched into a silicon wafer. Tests of spectrometer elements, the energy analyzer and collimator, were performed with a 5 keV electron beam. The measured collimator transmission and energy selectivity were in good agreement with design targets. A single wafer element could be used as a plasma processing or fusion first wall diagnostic.
关键词： electron beam,microchip stacking,silicon wafer,plasma processing,fusion first wall diagnostic,lithography,plasma spectrometer,collimator,energy analyzer
更新于2025-09-04 15:30:14