研究目的
To optimize a Si/SiGe HBT featuring an implanted collector and a DPSA-SEG emitter-base architecture, studying arsenic and phosphorous doping species, and demonstrating a state-of-the-art 450 GHz fT HBT compatible with 55-nm MOSFETs.
研究成果
The study demonstrates that carbon-phosphorous co-implantation is the best candidate in terms of both silicon-defects and dopants profiles control, leading to improved HBT performances. A state-of-the-art 450 GHz fT HBT in a 55-nm CMOS node is achieved through layout optimization.
研究不足
The implementation of an implanted collector module using arsenic leads to an important amount of defects, comprising punctual defects and dislocation loops which could induce a device yield lessening and reliability issues. Carbon-phosphorous co-implantation dramatically reduces this drawback.
1：Experimental Design and Method Selection:
The study uses the BiCMOS055 technology as reference, focusing on the collector module fabrication, replacing the buried layer with an implanted area. Arsenic, phosphorous implantations, and carbon-phosphorous co-implantations are studied.
2：Sample Selection and Data Sources:
Standard CBEBC 0.2 × 5.56 μm2 high speed HBT and crenels structures are evaluated.
3：2 × 56 μm2 high speed HBT and crenels structures are evaluated.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Photoluminescence Imaging (PLI) measurements, Transmission Electron Microscopy (TEM), Secondary Ions Mass Spectroscopy (SIMS).
4：Experimental Procedures and Operational Workflow:
Defects induced by collector implantations are investigated using PLI and TEM. Dopants profiles control is studied using SIMS.
5：Data Analysis Methods:
The impact of implantation conditions on HBT performances is discussed, focusing on collector current, fT performances, and layout optimization.
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