- 标题
- 摘要
- 关键词
- 实验方案
- 产品
过滤筛选
- 2019
- 2018
- JBSFET
- Robustness
- MOSFET
- Reliability
- Silicon Carbide
- 4H-SiC
- Failure Mechanism
- Short Circuit
- Ruggedness
- silicon photonics
- Electrical Engineering and Automation
- Optoelectronic Information Science and Engineering
- Electronic Science and Technology
- North Carolina State University
- MediaTek, Inc.
- JCET STATS ChipPAC Pte. Ltd.
-
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition
摘要： Films of silicon nitride SiNx, obtained by plasma-enhanced chemical vapor deposition from the monosilane SiH4 and ammonia NH3 gases, are widely used in microelectronics and micro- and nanoelectromechanical systems. Residual mechanical stresses and film composition are important characteristics for many applications. The properties of SiNx films, particularly mechanical stresses and composition, depend largely on the conditions of production, e.g., the ratio of the reacting gas flow rates, the composition of the gas mixture, the power and frequency of the plasma generator, and the temperature and pressure during deposition. Despite the great volume of works on the subject, data regarding the dependence of the properties and composition of SiNx films on the conditions of production remain sparse. This work considers the effect the ratio of the reacting gas flow rates has on the mechanical stresses and composition of silicon nitride films SiNx obtained by plasma-enhanced chemical vapor deposition from gaseous mixtures of SiH4 monosilane and NH3 ammonia using low-frequency plasma. It is found that when the ratio of the gas flow rates of SiH4 and NH3 is raised from 0.016 to 0.25, the compressive mechanical stresses are reduced by 31%, the stoichiometric coefficient falls from 1.40 to 1.20, the refractive index rises from 1.91 to 2.08, the concentration of N–H bonds is reduced by a factor of 7.4, the concentration of Si–H bonds grows by a factor of 8.7, and the concentration of hydrogen atoms is reduced by a factor of 1.5. These results can be used for the controlled production of SiNx films with such specified characteristics as residual mechanical stresses, refractive index, stoichiometric coefficient, and the concentration of hydrogen-containing bonds.
关键词： mechanical stresses,optical profilometry,films of PECVD silicon nitride SiNx,IR Fourier spectroscopy
更新于2025-11-14 15:18:02
-
Preparation of α‐Si <sub/>3</sub> N <sub/>4</sub> by direct nitridation using the polysilicon waste by diamond wire cutting
摘要： With the rapid development of the semiconductor industry and solar photovoltaic industry, a large number of polysilicon wastes from diamond wire cutting are accumulated, which not only pollute the environment, but also cause safety problems due to the ultrafine particle size and high reactivity. The diamond wire cutting polysilicon waste was used to prepare α-Si3N4 by direct nitridation method. This method could not only fully recycle the waste and reduce environmental pollution, but also reduce the production cost of α-Si3N4. Furthermore, the effects of FeCl3, NaCl and metal Cu on the nitridation of polysilicon waste are investigated in detail, respectively. It is found that FeCl3 and NaCl are not ideal additives for the preparation of α-Si3N4. However, α-Si3N4 dominated Si3N4 can be obtained via adding 5 wt. % Cu after nitridation at 1250 oC for 8 h, and the relative content of α-Si3N4 reaches 92.37 %.
关键词： silicon nitride,crystal growth,nitridation,catalysts/catalysis,powders
更新于2025-11-14 14:48:53
-
Infrared Light Management Using a Nanocrystalline Silicon Oxide Interlayer in Monolithic Perovskite/Silicon Heterojunction Tandem Solar Cells with Efficiency above 25%
摘要： Perovskite/silicon tandem solar cells are attractive for their potential for boosting cell efficiency beyond the crystalline silicon (Si) single-junction limit. However, the relatively large optical refractive index of Si, in comparison to that of transparent conducting oxides and perovskite absorber layers, results in significant reflection losses at the internal junction between the cells in monolithic (two-terminal) devices. Therefore, light management is crucial to improve photocurrent absorption in the Si bottom cell. Here it is shown that the infrared reflection losses in tandem cells processed on a flat silicon substrate can be significantly reduced by using an optical interlayer consisting of nanocrystalline silicon oxide. It is demonstrated that 110 nm thick interlayers with a refractive index of 2.6 (at 800 nm) result in 1.4 mA cm?2 current gain in the silicon bottom cell. Under AM1.5G irradiation, the champion 1 cm2 perovskite/silicon monolithic tandem cell exhibits a top cell + bottom cell total current density of 38.7 mA cm?2 and a certified stabilized power conversion efficiency of 25.2%.
关键词： monolithic perovskite/silicon tandem solar cells,infrared photocurrent absorption,nanocrystalline silicon oxide interlayers
更新于2025-10-22 19:40:53
-
[IEEE 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Waikoloa Village, HI, USA (2018.6.10-2018.6.15)] 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Mitigating optical losses in crystalline silicon thin-film solar cells on glass
摘要： Liquid phase crystallized silicon thin-film solar cells on glass provide efficiencies up to 14.2 %. While open-circuit voltage and fill factor are already comparable to wafer-based devices, short-circuit current density is reduced due to incomplete light absorption. This paper analyzes the losses of current device designs in experiment and one-dimensional simulations, revealing the low absorber thickness of 15-20 μm as well as the planar glass-silicon interface as the main cause of non-absorption. Interface textures, in particular a sinusoidal texture and a smooth anti-reflective three-dimensional (SMART) texture, are discussed concerning their potential to mitigate these losses, allowing to reduce losses at the glass-silicon interface by at least 40% relative. Taking the electronic interface quality into account, the SMART texture is identified as the most promising texture for light management in liquid phase crystallized silicon thin-film solar cells on glass.
关键词： light management,thin-film solar cells,absorption enhancement,silicon
更新于2025-10-22 19:40:53
-
AIP Conference Proceedings [Author(s) SILICONPV 2018, THE 8TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS - Lausanne, Switzerland (19–21 March 2018)] - Understanding the optics of industrial black silicon
摘要： Industrial scale black silicon texturing has become a topic of increasing importance as a method for enabling lower cost multicrystalline silicon wafers through diamond wire sawing, as well as for its potential to provide improved efficiencies through enhanced optical characteristics. Two different texturing processes have emerged as candidates for mainstream industrial uptake, metal catalyzed chemical etching (MCCE) and reactive ion etching (RIE). However, these techniques can produce substantially different textures and both provide a wide parameter space allowing for various feature shapes and sizes to be produced. The surface texture not only determines the total reflectance of a solar cell, but also impacts the light trapping and subsequent absorption through scattering. Here, we carry out a detailed analysis on a representative range of both MCCE and RIE textures on multiple substrate types in order to further develop the fundamental understanding of how these specific surface morphologies impact the optical characteristics. This will better enable integration with other process conditions as well as optimization between optical and electrical requirements.
关键词： black silicon,surface morphology,RIE,MCCE,optical characteristics
更新于2025-10-22 19:40:53
-
[IEEE 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Waikoloa Village, HI, USA (2018.6.10-2018.6.15)] 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) - Plasma Texturing of Silicon Wafers and Finished Solar Cell for Mass Production
摘要： Standard plasma texturing of silicon wafers are not widely introduced within mass production due to several challenges which have to be overcome before implementation i.e. surface contamination, surface near damaging due to ion bombardment, and surface passivation. Within this contribution we will show our current status to overcome these challenges. We will present that the electrical and optical properties of ICP only plasma textured samples are sufficient for solar cell production. Since in ICP processes the ion bombardment is low we also will discuss our current understanding of the plasma process based on experimental results of the self-masking process. Furthermore, a new plasma texturing approach texturing the SiN layer of finished solar cells is introduced for the first time which overcome all problems introduced by the plasma texturing of bare solar wafers.
关键词： Plasma materials processing,silicon,SiN texturing,Plasma texturing,photovoltaic cells
更新于2025-10-22 19:40:53
-
Effect of front TCO on the performance of rear-junction silicon heterojunction solar cells: Insights from simulations and experiments
摘要： In this study we make a detailed comparison between indium tin oxide (ITO), aluminum-doped zinc oxide (ZnO:Al) and hydrogenated indium oxide (IO:H) when applied on the illuminated side of rear-junction silicon heterojunction (SHJ) solar cells. ITO being the state of the art material for this application, ZnO:Al being an attractive substitute due to its cost effectiveness and IO:H being a transparent conductive oxide (TCO) with high-mobility and excellent optical properties. Through numerical simulations, the optically optimal thicknesses for a double layer anti-reflective coating system, consisting of the respective TCO and amorphous silicon oxide (a-SiO2) capping layers are defined. Through two-dimensional electrical simulations, we present a comparison between front-junction and rear-junction devices to show the behavior of series resistance (Rs) in dependence of the TCO sheet resistance (Rsh) and the device effective lifetime (τeff). The study indicates that there is a τeff dependent critical TCO Rsh value, above which, the rear-junction device will become advantageous over the front-junction design in terms of Rs. Solar cells with the respective layers are analyzed. We show that a thinner TCO optimized layer will result in a benefit in cell performance when implementing a double layer anti-reflective coating. We conclude that for a highest efficiency solar cell performance, a high mobility TCO, like IO:H, is required as the device simulations show. However, the rear-junction solar cell design permits the implementation of a lower conductive TCO in the example of the cost-effective ZnO:Al with comparable performance to the ITO, opening the possibility for substitution in mass production.
关键词： Transparent conductive oxide,Sheet resistance,Series resistance,Rear-junction,Silicon heterojunction,Anti-reflective coating
更新于2025-10-22 19:40:53
-
Light management in crystalline silicon thin-film solar cells with imprint-textured glass superstrate
摘要： The implementation of light management textures in thin-film solar cells often simultaneously causes an undesired deterioration of electronic performance. Here, we introduce a simple yet effective technique for improved light management in liquid phase crystallized silicon thin-film solar cells on glass. By imprinting pyramidal textures on the sun-facing side of the glass superstrate, absorber and functional layers of the device remain unaffected while light in-coupling is significantly increased. An increase of short-circuit current density by 2.5 mA cm2 was observed by texturing the glass in this way, corresponding to an enhanced power conversion efficiency from 12.9% to 13.8%. Optical simulations allow to attribute the increase in equal shares to an anti-reflective effect at the air-glass interface as well as light scattering and multiple passes through the glass. The technology allows for independent optimization of optical performance without compromising on electronic material issues and is therefore useable for any other solar cell technology using a glass superstrate.
关键词： Light management,Nano-imprint lithography,Liquid phase crystallization,Thin-film solar cells,Silicon
更新于2025-10-22 19:40:53
-
Advanced Graphene-Based Transparent Conductive Electrodes for Photovoltaic Applications
摘要： New architectures of transparent conductive electrodes (TCEs) incorporating graphene monolayers in different configurations have been explored with the aim to improve the performance of silicon-heterojunction (SHJ) cell front transparent contacts. In SHJ technology, front electrodes play an important additional role as anti-reflectance (AR) coatings. In this work, different transparent-conductive-oxide (TCO) thin films have been combined with graphene monolayers in different configurations, yielding advanced transparent electrodes specifically designed to minimize surface reflection over a wide range of wavelengths and angles of incidence and to improve electrical performance. A preliminary analysis reveals a strong dependence of the optoelectronic properties of the TCEs on (i) the order in which the different thin films are deposited or the graphene is transferred and (ii) the specific TCO material used. The results shows a clear electrical improvement when three graphene monolayers are placed on top on 80-nm-thick ITO thin film. This optimum TCE presents sheet resistances as low as 55 ?/sq and an average conductance as high as 13.12 mS. In addition, the spectral reflectance of this TCE also shows an important reduction in its weighted reflectance value of 2–3%. Hence, the work undergone so far clearly suggests the possibility to noticeably improve transparent electrodes with this approach and therefore to further enhance silicon-heterojunction cell performance. These results achieved so far clearly open the possibility to noticeably improve TCEs and therefore to further enhance SHJ contact-technology performance.
关键词： transparent electrodes,silicon heterojunction solar devices,graphene
更新于2025-10-22 19:40:53
-
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
摘要： Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s-1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s-1). The better SRV with AlOxNy film is due to the collective effect of field-effect passivation by the presence of fixed negative charges, and chemical passivation by the presence of hydrogen within the film. The capacitance-voltage, and conductance measurements also are carried out using metal-oxide-semiconductor structure to determine the fixed negative charge density (Nf,ox), and defect density of states (Dit) in the AlOxNy films. The better surface passivation is attributed to unusually large Nf,ox of ~6.07 × 1012 cm-2, and minimal Dit of ~1.01 × 1011 cm-2-eV-1 owing to the saturation of Si dangling bonds by the hydrogen within the AlOxNy film matrix after the annealing step.
关键词： Surface passivation,Time-of-flight elastic recoil detection analysis (ToF-ERDA),Aluminum oxynitride,Thermal atomic layer deposition,Black flexible silicon
更新于2025-10-22 19:40:53